Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Chung-Chih Wu is active.

Publication


Featured researches published by Chung-Chih Wu.


SID Symposium Digest of Technical Papers | 2008

P-29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

Hsing-Hung Hsieh; Toshio Kamiya; Kenji Nomura; Hideo Hosono; Chung-Chih Wu

We report a model of the carrier transport and the subgap density of states in a representative amorphous oxide semiconductor, amorphous InGaZnO4 (a-IGZO), for device simulation of a-IGZO TFTs. Compared to hydrogenated amorphous silicon, a-IGZO exhibits much lower densities of tail states and deep gap states, leading to the small subthreshold swings and high mobilities.


Applied Physics Letters | 1998

Ink-jet printing of doped polymers for organic light emitting devices

Thomas R. Hebner; Chung-Chih Wu; Duane Marcy; M.-H. Lu; James C. Sturm

Ink-jet printing was used to directly deposit patterned luminescent doped-polymer films. The luminescence of polyvinylcarbazol (PVK) films, with dyes of coumarin 6 (C6), coumarin 47 (C47), and nile red was similar to that of films of the same composition deposited by spin coating. Light emitting diodes with low turn-on voltages were also fabricated in PVK doped with C6 deposited by ink-jet printing.


Applied Physics Letters | 2008

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

Hsing-Hung Hsieh; Toshio Kamiya; Kenji Nomura; Hideo Hosono; Chung-Chih Wu

We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO4 (a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities.


Applied Physics Letters | 2003

Top-emitting organic light-emitting devices using surface-modified Ag anode

Chieh-Wei Chen; Ping-Yuan Hsieh; Huo-Hsien Chiang; Chun-Liang Lin; Han-Ming Wu; Chung-Chih Wu

A high-reflectivity bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). Ag has the highest reflectivity for visible light among all metals, yet its electronic properties are not ideal for anodes of OLEDs. In this letter, we report that by inducing a thin silver oxide at the surface of Ag, hole injection from Ag anodes into OLEDs is largely enhanced yet with rather high reflectivity retained. Top-emitting devices using such surface-modified Ag anode show device characteristics competitive with those of a bottom-emitting device using the indium tin oxide anode.


IEEE Transactions on Electron Devices | 1997

Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar carrier transport abilities

Chung-Chih Wu; James C. Sturm; Richard A. Register; Jing Tian; E.P. Dana; M.E. Tnompson

Detailed studies of electroluminescent devices made from single-layer doped polymer blend thin films having bipolar carrier transport abilities are presented. The active organic layer consists of the hole-transport polymer poly(N-vinylcarbazole) (PVK) containing dispersed electron-transport molecules, as well as different fluorescent small molecules or polymers as emitting centers to vary the emission color. Both the photoluminescence and electroluminescence (EL) properties are extensively studied. In photoluminescence, very efficient transfer of energy can occur from the host to very dilute (/spl sim/1 wt.%) amounts of emitting materials. When covered with a metal layer, the intensity of photoluminescence from blend thin films was found to be dependent on the type of metal coverage. The optical and electrical properties of materials and devices were systematically studied to understand the operating mechanisms and to optimize the devices. In EL, excitons appear to be formed at doped emitting centers, rather than in the host. We show that in an optimized device, a relatively high external quantum efficiency (>1%, backside emission only) and a low operating voltage (<10 V for over 100 cd/m/sup 2/) can be easily achieved by this class of devices. It was also found air-stable Ag is as good as reactive Mg-Ag alloy for the cathode contact in devices using PVK containing dispersed electron-transport oxadiazole molecules.


Advanced Materials | 2016

Sky‐Blue Organic Light Emitting Diode with 37% External Quantum Efficiency Using Thermally Activated Delayed Fluorescence from Spiroacridine‐Triazine Hybrid

Ting-An Lin; Tanmay Chatterjee; Wei-Lung Tsai; Wei-Kai Lee; Meng-Jung Wu; Min Jiao; Kuan-Chung Pan; Chih-Lung Yi; Chin-Lung Chung; Ken-Tsung Wong; Chung-Chih Wu

Extremely efficient sky-blue organic electroluminescence with external quantum efficiency of ≈37% is achieved in a conventional planar device structure, using a highly efficient thermally activated delayed fluorescence emitter based on the spiroacridine-triazine hybrid and simultaneously possessing nearly unitary (100%) photoluminescence quantum yield, excellent thermal stability, and strongly horizontally oriented emitting dipoles (with a horizontal dipole ratio of 83%).


Journal of Organic Chemistry | 2010

Organic dyes containing coplanar diphenyl-substituted dithienosilole core for efficient dye-sensitized solar cells.

Li-Yen Lin; Chih-Hung Tsai; Ken-Tsung Wong; Tsung-Wei Huang; Lun Hsieh; Su-Hao Liu; Hao-Wu Lin; Chung-Chih Wu; Shu-Hua Chou; Shinn-Horng Chen; An-I Tsai

Two new organic dyes adopting coplanar diphenyl-substituted dithienosilole as the central linkage have been synthesized, characterized, and used as the sensitizers for dye-sensitized solar cells (DSSCs). The best DSSC exhibited a high power conversion efficiency up to 7.6% (TP6CADTS) under AM 1.5G irradiation, reaching approximately 96% of the ruthenium dye N719-based reference cell under the same conditions.


IEEE Electron Device Letters | 1997

Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates

Chung-Chih Wu; S.D. Theiuss; G. Gu; M.H. Lu; James C. Sturm; Sigurd Wagner; Stephen R. Forrest

We report the integration of organic light emitting devices (OLEDs) and amorphous Si (a-Si) thin-film transistors (TFTs) on both glass, and unbreakable and lightweight thin stainless steel foil substrates. The doped-polymer OLEDs were built following fabrication of driver TFTs in a stacked structure. Due to the opacity of the steel substrate, top-emitting OLED structures were developed. It is shown that the a-Si TFTs provide adequate current levels to drive the OLEDs at video brightness (/spl sim/100 cd/m/sup 2/). This work demonstrates that lightweight and rugged TFT backplanes with integrated OLEDs are essential elements for robust and highly portable active-matrix emissive flat-panel displays.


Applied Physics Letters | 2006

Electronic structures and electron-injection mechanisms of cesium-carbonate-incorporated cathode structures for organic light-emitting devices

Chih-I Wu; Chan-Tin Lin; Yu-Hung Chen; Mei-Hsin Chen; Yin-Jui Lu; Chung-Chih Wu

In this letter, we investigate electronic structures and electron-injection mechanisms of the effective cathode structures for organic light-emitting devices incorporating cesium carbonate (Cs2CO3), either deposited as an individual thin injection layer or doped into the organic electron-transport layers. The electronic structures and the interface chemistry studied by ultraviolet and x-ray photoemission spectroscopy show that the enhanced electron injection is associated with strong n-doping effects and increase of electron concentrations in the electron-transport layer induced by Cs2CO3. Since such a reaction occurs without the presence of metals, cathode structures incorporating Cs2CO3 may be applied to a wide range of electrode materials.


Applied Physics Letters | 2005

Effective connecting architecture for tandem organic light-emitting devices

Chieh-Wei Chen; Yin-Jui Lu; Chung-Chih Wu; Elbert Hsing-En Wu; Chih-Wei Chu; Yang Yang

An effective connecting structure for tandem organic light-emitting devices is reported. The connecting structure consists of a thin metal layer as the common electrode, a hole-injection layer containing MoO3 on one side of the common electrode, and an electron-injection layer involving Cs2CO3 on the other side. Such a connecting structure permits efficient opposite hole and electron injection into two adjacent emitting units and gives tandem devices superior electrical and optical performances. Furthermore, the present connecting structure involves no sputtering or handling of reactive metals during device fabrication and can be prepared purely by thermal evaporation, thus rendering device processing more feasible.

Collaboration


Dive into the Chung-Chih Wu's collaboration.

Top Co-Authors

Avatar
Top Co-Authors

Avatar

Chun-Liang Lin

National Taiwan University

View shared research outputs
Top Co-Authors

Avatar

Yun Chi

National Tsing Hua University

View shared research outputs
Top Co-Authors

Avatar

Chih-Hao Chang

National Taiwan University

View shared research outputs
Top Co-Authors

Avatar

Ting-Yi Cho

National Taiwan University

View shared research outputs
Top Co-Authors

Avatar

Wei-Kai Lee

National Taiwan University

View shared research outputs
Top Co-Authors

Avatar

Hsing-Hung Hsieh

National Taiwan University

View shared research outputs
Top Co-Authors

Avatar

Chieh-Wei Chen

National Taiwan University

View shared research outputs
Top Co-Authors

Avatar

Chih-Hung Tsai

National Dong Hwa University

View shared research outputs
Top Co-Authors

Avatar

Pi-Tai Chou

National Taiwan University

View shared research outputs
Researchain Logo
Decentralizing Knowledge