Chunming Jin

Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films

Abstract We have investigated the structural, optical and magnetic properties of high quality epitaxial Zn 1− x Mn x O (diluted magnetic semiconductor) films. These films were deposited on (0001) sapphire substrate by a pulsed laser deposition technique. The nonequilibrium nature of the laser–material interaction allowed us to dope higher Mn contents ( x =0.36) than allowed by thermal equilibrium limit ( x ∼0.13). All the films investigated here were found to be single phased and epitaxial with (0001) orientation. As the Mn concentration increases in the system, the c -axis lattice constant was found to increase linearly. Optical transmittance study showed an increase in the insulating band-gap ( E g ) with increase in Mn atomic fraction x following E g =3.270+2.760x−4.988x 2 eV . DC magnetization measurements showed the paramagnetic nature of the system.

Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure

We have fabricated a p–n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20–300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified.We have fabricated a p–n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20–300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified.

Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and physical properties

We report a systematic study of the structural, chemical, electrical, optical, and magnetic properties of undoped ZnO thin films grown under different conditions as well as the films that were annealed in various environments. Oxygen-annealed films displayed a sequential transition from ferromagnetism to diamagnetism as a function of the annealing temperature. An increase in the green band intensity has been observed in oxygen-annealed ZnO films. Reversible switching of room-temperature ferromagnetism and n-type conductivity have been demonstrated by oxygen and vacuum annealing. Electron paramagnetic resonance data were found to be in agreement with the results of magnetization and conductivity measurements. Possibility of external ferromagnetic impurity as the origin of the unconventional room temperature ferromagnetism in these films has been ruled out by secondary ion mass spectrometer and electron energy loss spectroscopy studies. Correlation between structural, electrical, optical, and magnetic prope...

Strain-induced tuning of metal–insulator transition in NdNiO3

We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal–insulator (M–I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between NdNiO3 and the buffer layer just below it. It was shown that by the proper selection of the substrate and thickness of film, it is possible to control and precisely tune the M–I transition temperature of NdNiO3 to any desired value between 12 and 300 K (temperature range of this study). Fine control over the M–I transition temperature of these films is likely to boost the potential of these films for their applications in bolometers, actuators, and thermal/optical switches in next-generation perovskite-based microelectronic devices.

Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy

High-quality lead zirconate titanate films (PZT) have been grown on yttrium barium copper oxide (YBCO) bottom electrode by domain epitaxy where integral multiples of lattice constants match across the interface. The YBCO films were epitaxially fabricated on Si (100) by introducing epilayer geometry of strontium titanate/magnesium oxide/titanium nitride. Pulsed-laser ablation was used to evaporate these five stoichiometric targets in a high vacuum chamber. X-ray diffraction and high-resolution transmission electron microscopy techniques were employed to gain understanding of the structure, crystallinity, and interfaces in these epilayers. The electrical characterization of the PZT films with evaporated silver contacts resulted in superior values of spontaneous polarization, remnant polarization, and coercive fields. This heterostructure opens a way for integration of epitaxial single-crystal PZT-based capacitors with silicon-based devices.

Pulsed Laser Deposition of Antimicrobial Silver Coating on Ormocer® Microneedles

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition.The antibacterial activity of the silver-coated organically modified ceramic (Ormocer)microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer surfaces coated with silver was similar to that on uncoated Ormocer surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality.

Ultraviolet-illumination-enhanced photoluminescence effect in zinc oxide thin films

We report an enhancement effect of ultraviolet illumination on the photoluminescence intensities of zinc oxide thin films. Large-grain ⟨0001⟩-textured zinc oxide thin films were deposited on amorphous-fused silica substrates using pulsed laser deposition. We found that the intensities of excitonic emission and green-band emission increased with ultraviolet light exposure time until a maximum value was achieved. We attribute this ultraviolet radiation enhancement effect to oxygen desorption on the surface of the zinc oxide thin film. We have proposed a phenomenological model to explain this interesting photoluminescence behavior.

Atomic layer deposition-based functionalization of materials for medical and environmental health applications

Nanoporous alumina membranes exhibit high pore densities, well-controlled and uniform pore sizes, as well as straight pores. Owing to these unusual properties, nanoporous alumina membranes are currently being considered for use in implantable sensor membranes and water purification membranes. Atomic layer deposition is a thin-film growth process that may be used to modify the pore size in a nanoporous alumina membrane while retaining a narrow pore distribution. In addition, films deposited by means of atomic layer deposition may impart improved biological functionality to nanoporous alumina membranes. In this study, zinc oxide coatings and platinum coatings were deposited on nanoporous alumina membranes by means of atomic layer deposition. PEGylated nanoporous alumina membranes were prepared by self-assembly of 1-mercaptoundec-11-yl hexa(ethylene glycol) on platinum-coated nanoporous alumina membranes. The pores of the PEGylated nanoporous alumina membranes remained free of fouling after exposure to human platelet-rich plasma; protein adsorption, fibrin networks and platelet aggregation were not observed on the coated membrane surface. Zinc oxide-coated nanoporous alumina membranes demonstrated activity against two waterborne pathogens, Escherichia coli and Staphylococcus aureus. The results of this work indicate that nanoporous alumina membranes may be modified using atomic layer deposition for use in a variety of medical and environmental health applications.

On growth of epitaxial vanadium oxide thin film on sapphire (0001)

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO 2 ) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO 2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002) f2 ∥(0006) sub3 and [010] f2 ∥ sub . It was also established that VO 2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 10 4 ) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO 2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO 2 film on c -sapphire compared to a bulk single VO 2 crystal and a single-crystal VO 2 film on r -sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO 2 , which has important applications in switching and memory devices.

Optical and electrical properties of gallium-doped MgxZn1−xO

In this study, the optical and electrical properties of epitaxial single crystal gallium-doped MgxZn1−xO thin films grown on c-plane sapphire substrates by pulsed laser deposition were investigated. In these films, the Ga content was varied from 0.05 to 7 at. % and the Mg content was varied from 5 to 15 at. %. X-ray diffraction showed that the solid solubility limit of Ga in MgxZn1−xO is less than 3 at. %. The absorption spectra were fitted to examine Ga doping effects on bandgap and band tail characteristics. Distinctive trends in fitted bandgap and band tail characteristics were determined in films with Ga content below 3 at. % and Ga content above 3 at. %. The effects of bandgap engineering on optical transparency were evaluated using transmission spectra. Carrier concentration and Hall mobility data were obtained as functions of Ga content and Mg content. The electrical properties were significantly degraded when the Ga content exceeded 3 at. %. Correlations between conduction mechanisms and gallium d...