Chunqing Deng
University of Waterloo
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Publication
Featured researches published by Chunqing Deng.
Physical Review B | 2016
J.-L. Orgiazzi; Chunqing Deng; D. Layden; R. Marchildon; F. Kitapli; Feiruo Shen; Mustafa Bal; Florian R. Ong; Adrian Lupascu
We report experiments on superconducting flux qubits in a circuit quantum electrodynamics (cQED) setup. Two qubits, independently biased and controlled, are coupled to a coplanar waveguide resonator. Dispersive qubit state readout reaches a maximum contrast of 72%. We measure energy relaxation times at the symmetry point of 5 and
Nature Communications | 2012
Mustafa Bal; Chunqing Deng; Jean-Luc Orgiazzi; Florian R. Ong; Adrian Lupascu
10\ensuremath{\mu}\mathrm{s}
Journal of Applied Physics | 2013
Chunqing Deng; Martin Otto; Adrian Lupascu
, corresponding to 7 and
Nanotechnology | 2015
Florian R. Ong; Zheng Cui; Muhammet Ali Yurtalan; Cameron Vojvodin; Michał Papaj; Jean-Luc Orgiazzi; Chunqing Deng; Mustafa Bal; Adrian Lupascu
20\ensuremath{\mu}\mathrm{s}
Physical Review A | 2016
Chunqing Deng; Feiruo Shen; Sahel Ashhab; Adrian Lupascu
when relaxation through the resonator due to Purcell effect is subtracted out, and levels of flux noise of 2.6 and
Applied Physics Letters | 2014
Chunqing Deng; Martin Otto; Adrian Lupascu
2.7\phantom{\rule{0.222222em}{0ex}}\ensuremath{\mu}{\mathrm{\ensuremath{\Phi}}}_{0}/\sqrt{\text{Hz}}
Physical Review A | 2016
Eyal Buks; Chunqing Deng; Jean-Luc F. X. Orgazzi; Martin Otto; Adrian Lupascu
at 1 Hz for the two qubits. We discuss the origin of decoherence in the measured devices. The strong coupling between the qubits and the cavity leads to a large, cavity-mediated, qubit-qubit coupling. This coupling, which is characterized spectroscopically, reaches 38 MHz. These results demonstrate the potential of cQED as a platform for fundamental investigations of decoherence and quantum dynamics of flux qubits.
Bulletin of the American Physical Society | 2016
Chunqing Deng; Feiruo Shen; Jean-Luc Orgiazzi; Sahel Ashhab; Adrian Lupascu
Efficient detection of magnetic fields is central to many areas of research and technology. High-sensitivity detectors are commonly built using direct-current superconducting quantum interference devices or atomic systems. Here we use a single artificial atom to implement an ultrasensitive magnetometer with micron range size. The artificial atom, a superconducting two-level system, is operated similarly to atom and diamond nitrogen-vacancy centre-based magnetometers. The high sensitivity results from quantum coherence combined with strong coupling to magnetic field. We obtain a sensitivity of 3.3 pT Hz(-1/2) for a frequency at 10 MHz. We discuss feasible improvements to increase sensitivity by one order of magnitude. The intrinsic sensitivity of this detector at frequencies in the 100 kHz-10 MHz range compares favourably with direct-current superconducting quantum interference devices and atomic magnetometers of equivalent spatial resolution. This result illustrates the potential of artificial quantum systems for sensitive detection and related applications.
Bulletin of the American Physical Society | 2015
Jean-Luc Orgiazzi; Chunqing Deng; Feiruo Shen; Nicolas Gonzalez; Adrian Lupascu
Superconducting resonators provide a convenient way to measure loss tangents of various dielectrics at low temperature. For the purpose of examining the microscopic loss mechanisms in dielectrics, precise measurements of the internal quality factor at different values of energy stored in the resonators are required. Here, we present a consistent method to analyze a LC superconducting resonator coupled to a transmission line. We first derive an approximate expression for the transmission S-parameter S21(ω), with ω the excitation frequency, based on a complete circuit model. In the weak coupling limit, we show that the internal quality factor is reliably determined by fitting the approximate form of S21(ω). Since the voltage V of the capacitor of the LC circuit is required to determine the energy stored in the resonator, we next calculate the relation between V and the forward propagating wave voltage Vin+, with the latter being the parameter controlled in experiments. Due to the dependence of the quality f...
Bulletin of the American Physical Society | 2015
Chunqing Deng; Feiruo Shen; Jean-Luc Orgiazzi; Sahel Ashhab; Adrian Lupascu
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77 K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.