Chunshu Zhang

Silicon Photonic Switch Subsystem With 900 Monolithically Integrated Calibration Photodiodes and 64-Fiber Package

Monolithic germanium photodiodes on every cell calibrate a 32×32 silicon photonic switch of 448 Mach-Zehnders in 10 minutes. 64 fibers permanently attached through a waveguide concentrator in a wire-bonded BGA achieve 2.9dB C-band TE fiber-to-die.

Optical proximity correction in geometry sensitive silicon photonics waveguide crossings

Silicon waveguide crossings using multi-mode interferometers are highly sensitive to geometry at the internal corners. Optical proximity correction was developed using design-of-experiments without sophisticated foundry modeling. This simple technique improved loss by a factor of 2, to <30 mdB, while maintaining flatness over C-band.

Electrostatic discharge sensitivity of silicon photonic photodetectors and thermo-optic tuning elements

ESD sensitivity of silicon photonics critically affects manufacturability. We report the ESD sensitivity of monolithic silicon photonic elements, using ESDA/JEDEC tests. TiN heaters were class 1C, requiring JEDEC Basic ESD Control. Ge-photodiodes were class 0B, requiring Detailed ESD Control, unless on-chip ESD solutions are implemented.