Chunxue Hao

Flexible All-Solid-State Supercapacitors based on Liquid-Exfoliated Black-Phosphorus Nanoflakes.

Flexible all-solid-state supercapacitors are fabricated with liquid-exfoliated black-phosphorus (BP) nanoflakes as an electrode material. These devices deliver high specific volumetric capacitance, power density, and energy density, up to 13.75 F cm(-3) , 8.83 W cm(-3) , and 2.47 mW h cm(-3) , respectively, and an outstanding long life span of over 30 000 cycles, demonstrating the excellent performance of the BP nanoflakes as a flexible electrode material in electrochemical energy-storage devices.

Enhanced Photoresponse of SnSe-Nanocrystals-Decorated WS2 Monolayer Phototransistor

Single-layer WS2 has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band-gap-limited spectral selectivity. Here we have carried out investigations on WS2 monolayer based phototransistors with and without decoration of SnSe nanocrystals (NCs) for comparison. Compared to the solely WS2 monolayer, SnSe NCs decoration leads to not only huge enhancement of photoresponse in visible spectrum but also extension to near-infrared. Under excitation of visible light in a vacuum, the responsivity at zero gate bias can be enhanced by more than 45 times to ∼99 mA/W, and the response time is retained in millisecond level. Particularly, with extension of photoresponse to near-infrared (1064 nm), a responsivity of 6.6 mA/W can be still achieved. The excellent photoresponse from visible to near-infrared is considered to benefit from synergism of p-type SnSe NCs and n-type WS2 monolayer, or in other words, the formed p-n heterojunctions between p-type SnSe NCs and n-type WS2 monolayer.

Flexible Black-Phosphorus Nanoflake/Carbon Nanotube Composite Paper for High-Performance All-Solid-State Supercapacitors

We proposed a simple route for fabrication of the flexible BP nanoflake/carbon nanotube (CNT) composite paper as flexible electrodes in all-solid-state supercapacitors. The highly conductive CNTs not only play a role as active materials but also increase conductivity of the hybrid electrode, enhance electrolyte shuttling and prevent the restacking between BP nanoflakes. The fabricated flexible all-solid-state supercapacitor (ASSP) device at the mass proportion of BP/CNTs 1:4 was found to deliver the highest volumetric capacitance of up to 41.1 F/cm3 at 0.005 V/s, superior to the ASSP based on the bare graphene or BP. The BP/CNTs (1:4) device delivers a rapid charging/discharging up to 500 V/s, which exhibits the characteristic of a high power density of 821.62 W/cm3, while having outstanding mechanical flexibility and high cycling stability over 10 000 cycles (91.5% capacitance retained). Moreover the BP/CNTs (1:4) ASSP device still retains large volumetric capacitance (35.7 F/cm3 at the scan rate of 0.005 V/s) even after 11 months. In addition, the ASSP of BP/CNTs (1:4) exhibits high energy density of 5.71 mWh/cm3 and high power density of 821.62 W/cm3. As indicated in our work, the strategy of assembling stacked-layer composites films will open up novel possibility for realizing BP and CNTs in new-concept thin-film energy storage devices.

Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability

Black phosphorus (BP) has drawn great attention owing to its tunable band gap depending on thickness, high mobility, and large Ion/ Ioff ratio, which makes BP attractive for using in future two-dimensional electronic and optoelectronic devices. However, its instability under ambient conditions poses challenge to the research and limits its practical applications. In this work, we present a feasible approach to suppress the degradation of BP by sulfur (S) doping. The fabricated S-doped BP few-layer field-effect transistors (FETs) show more stable transistor performance under ambient conditions. After exposing to air for 21 days, the charge-carrier mobility of a representative S-doped BP FETs device decreases from 607 to 470 cm2 V-1 s-1 (remained as high as 77.4%) under ambient conditions and a large Ion/ Ioff ratio of ∼103 is still retained. The atomic force microscopy analysis, including surface morphology, thickness, and roughness, also indicates the lower degradation rate of S-doped BP compared to BP. First-principles calculations show that the dopant S atom energetically prefers to chemisorb on the BP surface in a dangling form and the enhanced stability of S-doped BP can be ascribed to the downshift of the conduction band minimum of BP below the redox potential of O2/O2-. Our work suggests that S doping is an effective way to enhance the stability of black phosphorus.

Layer structured bismuth selenides Bi2Se3 and Bi3Se4 for high energy and flexible all-solid-state micro-supercapacitors

In this work, bismuth selenides (Bi2Se3 and Bi3Se4), both of which have a layered rhombohedral crystal structure, have been found to be useful as electrode materials for supercapacitor applications. In a liquid electrolyte system (6M KOH), Bi2Se3 nanoplates exhibit much better performance as an electrode material than Bi3Se4 nanoparticles do, delivering a higher specific capacitance (272.9 F g-1) than that of Bi3Se4 (193.6 F g-1) at 5 mV s-1. This result may be attributed to the fact that Bi2Se3 nanoplates possess more active electrochemical surfaces for the reversible surface redox reactions owing to their planar quintuple stacked layers (septuple layers for Bi3Se4). To meet the demands of electronic skin, we used a novel flexible annular interdigital structure electrode to support the all-solid-state micro-supercapacitors (AMSCs). The Bi2Se3 AMSC device delivers a much better supercapacitor performance, exhibits a large stack capacitance of 89.5 F cm-3 at 20 mV s-1 (Bi3Se4: 79.1 F cm-3), a high energy density of 17.9 mWh cm-3 and a high power density of 18.9 W cm-3. The bismuth selenides also exhibit good cycle stability, with 95.5% retention after 1000 c for Bi2Se3 (Bi3Se4:90.3%). Clearly, Bi2Se3 nanoplates can be promising electrode materials for flexible annular interdigital AMSCs.Bismuth selenides (Bi2Se3 and Bi3Se4), both of which have the layered rhombohedral crystal structure, and found to be useful as electrode materials for supercapacitor application in this work. Bi2Se3 nanoplates as electrode material exhibit much better performance than that of Bi3Se4 nanoparticles in liquid electrolyte system (6 M KOH), which delivers a higher specific capacitance (272.9 F/g) than that of Bi3Se4 (193.6 F/g) at 5 mV/s. This result would may be attributed to that Bi2Se3 nanoplates possess more active electrochemical surfaces for the reversible surface redox reactions owing to its planar quintuple stacked layers (septuple layers for Bi3Se4). For the demand of electronic skin, we used a novel flexible annular interdigital structure electrode applying for all-solid-state micro-supercapacitors (AMSCs). Bi2Se3 AMSCs device delivers a much more excellent supercapacitor performance, exhibits a large stack capacitance 89.5 F/cm3 (Bi3Se4: 79.1 F/cm3) at 20 mV/s, a high energy density 17.9 mWh/cm3 and high power density 18.9 W/cm3. The bismuth selenides also exhibit good cycle stability, retention 95.5% (90.3%) after 1000 c for Bi2Se3 (Bi3Se4). Obviously, Bi2Se3 nanoplates can be promising electrode materials for flexible annular interdigital all-solid-sate supercapacitor.