Clark T.-C. Nguyen

MEMS technology for timing and frequency control

An overview on the vise of microelectromechanical systems (MEMS) technologies for timing and frequency control is presented. In particular, micromechanical RF filters and reference oscillators based on recently demonstrated vibrating on-chip micromechanical resonators with Qs > 10,000 at 1.5 GHz are described as an attractive solution to the increasing count of RF components (e.g., filters) expected to be needed by future multiband, multimode wireless devices. With Qs this high in on-chip abundance, such devices might also enable a paradigm shift in the design of timing and frequency control functions, where the advantages of high-Q are emphasized, rather than suppressed (e.g., due to size and cost reasons), resulting in enhanced robustness and power savings. Indeed, as vibrating RF MEMS devices are perceived more as circuit building blocks than as stand-alone devices, and as the frequency processing circuits they enable become larger and more complex, the makings of an integrated micromechanical circuit technology begin to take shape, perhaps with a functional breadth not unlike that of integrated transistor circuits. With even more aggressive three-dimensional MEMS technologies, even higher on-chip Qs are possible, such as already achieved via chip-scale atomic physics packages, which so far have achieved Qs > 107 using atomic cells measuring only 10 mm3 in volume and consuming just 5 mW of power, all while still allowing atomic clock Allan deviations down to 10-11 at one hour

Micromachined devices for wireless communications

An overview of recent progress in the research and development of micromachined devices for use in wireless communication subsystems is presented. Among the specific devices described are tunable micromachined capacitors, integrated high-Q inductors, micromachined low-loss microwave and millimeter-wave filters, low-loss micromechanical switches, microscale vibrating mechanical resonators with Qs in the tens of thousands, and miniature antennas for millimeter-wave applications. Specific applications are reviewed for each of these components with emphasis on methods for miniaturization and performance enhancement of existing and further wireless transceivers.

High-Q HF microelectromechanical filters

IC-compatible microelectromechanical intermediate frequency filters using integrated resonators with Qs in the thousands to achieve filter Qs in the hundreds have been demonstrated using a polysilicon surface micromachining technology. These filters are composed of two clamped-clamped beam micromechanical resonators coupled by a soft flexural-mode mechanical spring. The center frequency of a given filter is determined by the resonance frequency of the constituent resonators, while the bandwidth is determined by the coupling spring dimensions and its location between the resonators. Quarter-wavelength coupling is required on this microscale to alleviate mass loading effects caused by similar resonator and coupler dimensions. Despite constraints arising from quarter-wavelength design, a range of percent bandwidths is still attainable by taking advantage of low-velocity spring attachment locations. A complete design procedure is presented in which electromechanical analogies are used to model the mechanical device via equivalent electrical circuits. Filter center frequencies around 8 MHz with Qs from 40 to 450 (i.e., percent bandwidths from 0.23 to 2.5%), associated insertion losses less than 2 dB, and spurious-free dynamic ranges around 78 dB are demonstrated using low-velocity designs with input and output termination resistances of the order of 12 k/spl Omega/.

An integrated CMOS micromechanical resonator high-Q oscillator

A completely monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator with the intent of achieving high stability. The operation and performance of micromechanical resonators are modeled, with emphasis on circuit and noise modeling of multiport resonators. A series resonant oscillator design is discussed that utilizes a unique, gain-controllable transresistance sustaining amplifier. We show that in the absence of an automatic level control loop, the closed-loop, steady-state oscillation amplitude of this oscillator depends strongly upon the dc-bias voltage applied to the capacitively driven and sensed /spl mu/resonator. Although the high-Q of the micromechanical resonator does contribute to improved oscillator stability, its limited power-handling ability outweighs the Q benefits and prevents this oscillator from achieving the high short-term stability normally expected of high-Q oscillators.

VHF free-free beam high-Q micromechanical resonators

Free-free-beam flexural-mode micromechanical resonators utilizing nonintrusive supports to achieve measured Qs as high as 8400 at VHF frequencies from 30 to 90 MHz are demonstrated in a polysilicon surface micromachining technology. The microresonators feature torsional-mode support springs that effectively isolate the resonator beam from its anchors via quarter-wavelength impedance transformations, minimizing anchor dissipation and allowing these resonators to achieve high-Q with high stiffness in the VHF frequency range. The free-free-beam micromechanical resonators of this paper are shown to have an order of magnitude higher Q than clamped-clamped-beam versions with comparable stiffnesses.

Frequency-selective MEMS for miniaturized low-power communication devices

With Qs in the tens to hundreds of thousands, micromachined vibrating resonators are proposed as integrated circuit-compatible tanks for use in the low phase-noise oscillators and highly selective filters of communications subsystems. To date, LF oscillators have been fully integrated using merged CMOS/microstructure technologies, and bandpass filters consisting of spring-coupled micromechanical resonators have been demonstrated in a frequency range from HF to VHF. In particular, two-resonator micromechanical bandpass filters have been demonstrated with frequencies up to 35 MHz, percent bandwidths on the order of 0.2%, and insertion losses less than 2 dB. Higher order three-resonator filters with frequencies near 455 kHz have also been achieved, with equally impressive insertion losses for 0.09% bandwidths, and with more than 64 dB of passband rejection. Additionally, free-beam single-pole resonators have recently been realized with frequencies up to 92 MHz and Qs around 8000. Evidence suggests that the ultimate frequency range of this high-Q tank technology depends upon material limitations, as well as design constraints, in particular, to the degree of electromechanical coupling achievable in microscale resonators.

Microelectromechanical filters for signal processing

Microelectromechanical (MEM) filters based on coupled, lateral microresonators are demonstrated. This class of MEM systems has potential signal-processing applications for filters which require narrow bandwidth (high Q), good signal-to-noise ratio (SNR) and stable temperature and aging characteristics. Both series and parallel filters were fabricated and tested using an off-chip modulation technique. The frequency range of these filters is from approximately 5 kHz to on the order of 1 MHz, for polysilicon microstructures with suspension beams having a 2- mu m-square cross section. A series-coupled resonator pair, designed for operation at atmospheric pressure, has a measured center frequency of 18.7 kHz and a bandwidth of 1.2 kHz.<<ETX>>

1.156-GHz self-aligned vibrating micromechanical disk resonator

A new fabrication methodology that allows self-alignment of a micromechanical structure to its anchor(s) has been used to achieve vibrating radial-contour mode polysilicon micromechanical disk resonators with resonance frequencies up to 1.156 GHz and measured Qs at this frequency >2,650 in both vacuum and air. In addition, a 734.6-MHz version has been demonstrated with Qs of 7,890 and 5,160 in vacuum and air, respectively. For these resonators, self-alignment of the stem to exactly the center of the disk it supports allows balancing of the resonator far superior to that achieved by previous versions (in which separate masks were used to define the disk and stem), allowing the present devices to retain high Q while achieving frequencies in the gigahertz range for the first time. In addition to providing details on the fabrication process, testing techniques, and experimental results, this paper formulates an equivalent electrical circuit model that accurately predicts the performance of these disk resonators.

High-Q UHF micromechanical radial-contour mode disk resonators

A micromechanical, laterally vibrating disk resonator, fabricated via a technology combining polysilicon surface-micromachining and metal electroplating to attain submicron lateral capacitive gaps, has been demonstrated at frequencies as high as 829 MHz and with Qs as high as 23 000 at 193 MHz. Furthermore, the resonators have been demonstrated operating in the first three radial contour modes, allowing a significant frequency increase without scaling the device, and a 193 MHz resonator has been shown operating at atmospheric pressure with a Q of 8,880, evidence that vacuum packaging is not necessary for many applications. These results represent an important step toward reaching the frequencies required by the RF front-ends in wireless transceivers. The geometric dimensions necessary to reach a given frequency are larger for this contour-mode than for the flexural-modes used by previous resonators. This, coupled with its unprecedented Q value, makes this disk resonator a choice candidate for use in the IF and RF stages of future miniaturized transceivers. Finally, a number of measurement techniques are demonstrated, including two electromechanical mixing techniques, and evaluated for their ability to measure the performance of sub-optimal (e.g., insufficiently small capacitive gap, limited dc-bias), high-frequency, high-Q micromechanical resonators under conditions where parasitic effects could otherwise mask motional output currents. [1051].

High-order medium frequency micromechanical electronic filters

Third order, high-Q, micromechanical bandpass filters comprised of three ratioed folded-beam resonators coupled by flexural mode springs are demonstrated using an integrated circuit compatible, doped polycrystalline silicon surface-micromachining technology. A complete design procedure for multiresonator micromechanical filters is presented and solidified via an example design. The use of quarter-wavelength coupling beams attached to resonators at velocity-controllable locations is shown to suppress passband distortion due to finite-mass and process mismatch nonidealities, which become increasingly important on this microscale. In addition, low-velocity coupling methods are shown to greatly alleviate the lithographic resolution required to achieve a given percent bandwidth. Ratioed folded-beam micromechanical resonators are introduced as the key impedance transforming components that enable the needed low-velocity coupling. Using these design techniques, balanced three-resonator microscale mechanical filters with passband frequencies centered around 340 kHz are demonstrated with percent bandwidths of 0.1%, associated insertion losses as small as 0.1 dB, 20-dB shape factors as low as 1.5, and stopband rejections greater than 64 dB. Measurement and theory are rigorously compared and important limitations, such as thermal susceptibility, the need for passband tuning, and inadequate electromechanical coupling, are addressed.