Clas Persson

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4

The electronic structure as well as the optical response of kesterite and stannite structures of Cu2ZnSnS4 and Cu2ZnSnSe4 are analyzed by a relativistic full-potential linearized augmented plane wa ...

n -type doping of CuIn Se 2 and CuGa Se 2

The efficiency of

Relativistic band structure calculation of cubic and hexagonal SiC polytypes

\mathrm{CuIn}{\mathrm{Se}}_{2}

Optical band-gap determination of nanostructured WO3 film

based solar cell devices could improve significantly if

Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier

\mathrm{CuGa}{\mathrm{Se}}_{2}

Polarization-dependent soft-x-ray absorption of highly oriented ZnO microrod arrays

, a wider band gap chalcopyrite semiconductor, could be added to the

Electronic and optical properties of lead iodide

\mathrm{CuIn}{\mathrm{Se}}_{2}

BAND GAP NARROWING IN N-TYPE AND P-TYPE 3C-, 2H-, 4H-, 6H-SIC, AND SI

absorber layer. This is, however, limited by the difficulty of doping

Interlayer interactions in graphites.

n

Why can CuInSe2 be readily equilibrium-doped n-type but the wider-gap CuGaSe2 cannot?

-type