Claudia Wieczorek

Universal chemical vapour deposition system for metallurgical coatings

Abstract A versatile chemical vapour deposition system was constructed. The r.f.-heated reactor can operate in the cold-wall mode as well as the hot-wall mode. In addition quenching and annealing can be performed in the reactor immediately after the deposition process. The reactor is well suited for depositing various materials onto substrates of different geometrical shapes. This was demonstrated by coating the inner surfaces of hollow parts with tantalum, by coating molybdenum grids for power tubes with ZrC and by coating small steel springs with TiC/TiN.

Chemical vapour deposition of tantalum disilicide

Abstract A cold-wall chemical vapour deposition process is described for depositing tantalum disilicide (TaSi 2 ) directly onto silicon and/or silica with an excellent uniformity and step coverage. In a single-wafer process silane and tantalum pentachloride were used with hydrogen as the carrier gas. At a substrate temperature between 630 and 750°C TaSi 2 films could be produced at a deposition rate of 70 nm min -1 with a minimum resistivity of 60 μω cm after annealing for 1 h at 900°C in argon. The composition of the Ta-Si could be reproducibly influenced by varying, for example, the silane flow rate. The uniformity of the film thickness on a 4 in wafer was better than ±5%.