Cleber F. N. Marchiori

Hole mobility effect in the efficiency of bilayer heterojunction polymer/C60 photovoltaic cells

We report here bilayer heterojunction solar cells fabricated by using poly[9,9′-hexyl-fluorene-alt-bithiophene] (LaPPS43) polymer as active layer. The power conversion efficiency (η) displays a sevenfold increase upon annealing at 200 °C, reaching the value of 2.8%. This result is comparable to the highest η reported so far for bulk heterojunction solar cells using the same polymer. Simulation, absorbance spectra, and current versus voltage results indicate that the π–π stacking in solid state is enhanced after annealing with a reduction in traps and thus reflecting in higher hole mobility.

Electronic structure, molecular orientation, charge transfer dynamics and solar cells performance in donor/acceptor copolymers and fullerene: Experimental and theoretical approaches

By combining experimental and theoretical approaches, the electronic structure, molecular orientation, charge transfer dynamics and solar cell performance in donor/acceptor copolymer poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) films and blended with 6,6.-phenyl-C 61-butyric acid methyl ester (PSiF-DBT:PCBM) were investigated. Good agreement between experimental and theoretical PSiF-DBT UV-Vis absorption spectrum is observed and the main molecular orbitals contributing to the spectrum were determined using DFT single point calculations. Non-coplanar configuration was determined by geometric optimization calculation in isolated PSiF-DBT pentamer and corroborated by angular variation of the sulphur 1s near-edge X-ray absorption fine structure (NEXAFS) spectra. Edge-on and plane-on molecular orientations were obtained for thiophene and benzothiadiazole units, respectively. A power conversion efficiency up to 1.58%, open circuit voltage of 0.51 V...

Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60

In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C60 as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 °C. Space charge limited measurements of the hole mobility (μ) in PSiF-DBT give μ ∼ 1.0 × 10−4 cm2/(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron annihilation spectroscopy experiments revealed that PSiF-DBT films are well stacked even without the thermal treatment. The variations in the transport of holes upon annealing are then small. As a consequence, the PCE rise was mainly induced by the increase of the polymer surface roughness that leads to a more effective interface for exciton dissociation at the PSiF-DBT/fullerene heterojunction.

Hybrid vertical transistor based on controlled lateral channel overflow

We propose and demonstrate a hybrid transistor based on a thin film of sulfonated polyaniline (SPAN) deposited on n-Si, forming a Schottky barrier. Two Al contacts deposited onto the SPAN act as source and control terminals. We find that the device operation involves two regimes of charge carrier transport as a function of the voltage applied to the drain: (i) a space-charge limited (SCL) regime at low voltages created by the electrons that diffuse from the Al electrodes and accumulate near the SPAN/Si interface and (ii) a thermionic regime at higher voltage where transport is limited by charge carrier injection over the Schottky barrier at the SPAN/Si interface. Due to the electric field enhancement near the edge of the source terminal, the voltage in the control terminal increases the Schottky effect near the SPAN/silicon interface in this regime. This mechanism permits the modulation of current reaching the drain by the voltage applied to control terminal. From the current-voltage characteristics of th...

Thermally induced anchoring of fullerene in copolymers with Si-bridging atom: Spectroscopic evidences

We use X-ray photoelectron spectroscopy (XPS), Near-edge X-ray absorption fine structure (NEXAFS), resonant Auger spectroscopy (RAS), Attenuation Total Reflection Infrared (ATR-IR) and Atomic Force Microscopy (AFM) to study the blend between the copolymer poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) and the fullerene derivative PC71BM submitted to different annealing temperatures. Those measurements indicate that there is an incidental anchoring of a fullerene derivative to the Si-bridging atoms of a copolymer induced by thermal annealing of the film. Insights about the physical properties of one possible PSiF-DBT/PC71BM anchored structure are obtained using Density Functional Theory calculations. Since the performance of organic photovoltaic based on polymer-fullerene blends depends on the chemical structure of the blend components, the anchoring effect might affect the photovoltaic properties of those devices.

Femtosecond Electron Delocalization in Polymer:Fullerene Blend Films

Ultrafast electron dynamics in the low-femtosecond regime was evaluated for a low band-gap polymer and its blend with fullerene by resonant Auger spectroscopy. Remarkable changes developed by tuning the photon energy along the sulfur and silicon 1s absorption edges. The effect of thermal annealing and molecular orientation on the charge transfer delocalization times were probed and correlated with solar cells performance.