Clint L. Schow

A 71-Gb/s NRZ Modulated 850-nm VCSEL-Based Optical Link

We report error free (BER <; 10-12) operation of a directly non-return-to-zero modulated 850-nm vertical cavity surface-emitting laser (VCSEL) link operating to 71 Gb/s. This is the highest error free modulation rate for a directly modulated laser of any type. The optical link consists of a 130-nm BiCMOS driver IC with two-tap feed-forward equalization, a wide bandwidth 850-nm VCSEL, a surface illuminated GaAs PIN photodiode, and a 130-nm BiCMOS receiver IC.

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.

160 Gb/s Bidirectional Polymer-Waveguide Board-Level Optical Interconnects Using CMOS-Based Transceivers

We have developed parallel optical interconnect technologies designed to support terabit/s-class chip-to-chip data transfer through polymer waveguides integrated in printed circuit boards (PCBs). The board-level links represent a highly integrated packaging approach based on a novel parallel optical module, or Optomodule, with 16 transmitter and 16 receiver channels. Optomodules with 16 Tx+16 Rx channels have been assembled and fully characterized, with transmitters operating at data rates up to 20 Gb/s for a 27-1 PRBS pattern. Receivers characterized as fiber-coupled 16-channel transmitter-to-receiver links operated error-free up to 15 Gb/s, providing a 240 Gb/s aggregate bidirectional data rate. The low-profile Optomodule is directly surface mounted to a circuit board using convention ball grid array (BGA) solder process. Optical coupling to a dense array of polymer waveguides fabricated on the PCB is facilitated by turning mirrors and lens arrays integrated into the optical PCB. A complete optical link between two Optomodules interconnected through 32 polymer waveguides has been demonstrated with each unidirectional link operating at 10 Gb/s achieving a 160 Gb/s bidirectional data rate. The full module-to-module link provides the fastest, widest, and most integrated multimode optical bus demonstrated to date.

Monolithic Silicon Integration of Scaled Photonic Switch Fabrics, CMOS Logic, and Device Driver Circuits

We demonstrate 4 × 4 and 8 × 8 switch fabrics in multistage topologies based on 2 × 2 Mach-Zehnder interferometer switching elements. These fabrics are integrated onto a single chip with digital CMOS logic, device drivers, thermo-optic phase tuners, and electro-optic phase modulators using IBMs 90 nm silicon integrated nanophotonics technology. We show that the various switch-and-driver systems are capable of delivering nanosecond-scale reconfiguration times, low crosstalk, compact footprints, low power dissipations, and broad spectral bandwidths. Moreover, we validate the dynamic reconfigurability of the switch fabric changing the state of the fabric using time slots with sub-100-ns durations. We further verify the integrity of high-speed data transfers under such dynamic operation. This chip-scale switching system technology may provide a compelling solution to replace some routing functionality currently implemented as bandwidth- and power-limited electronic switch chips in high-performance computing systems.

Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks

We present a 4x4 spatially non-blocking Mach-Zehnder based silicon optical switch fabricated using processes fully compatible with standard CMOS. We successfully demonstrate operation in all 9 unique switch states and 12 possible I/O routing configurations, with worst-case cross-talk levels lower than -9 dB, and common spectral bandwidth of 7 nm. High-speed 40 Gbps data transmission experiments verify optical data integrity for all input-output channels.

Chip-to-chip optical interconnects

Terabus is based on a silicon-carrier interposer on an organic card containing 48 polymer waveguides. We have demonstrated 4times12 arrays of low power optical transmitters and receivers, operating up to 20 Gb/s and 14 Gb/s per channel respectively

Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter

We report on a widely tunable transmitter based on a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption (EA) modulator. Modulated time-averaged powers in excess of 5 dBm, RF extinction ratios >10 dB, and error-free transmission at 2.5 Gb/s for 350 km of standard single-mode fiber have been demonstrated across a 40-nm tuning range. In CW mode of operation, the module meets all long-haul system requirements for externally modulated laser sources: stability, power (>10 mW), RIN ( 100 yr for output wavelength stability and power across all channels.

Terabit/s-Class Optical PCB Links Incorporating 360-Gb/s Bidirectional 850 nm Parallel Optical Transceivers

We report here on the design, fabrication, and characterization of highly integrated parallel optical transceivers designed for Tb/s-class module-to-module data transfer through polymer waveguides integrated into optical printed circuit boards (o-PCBs). The parallel optical transceiver is based on a through-silicon-via silicon carrier as the platform for integration of 24-channel vertical cavity surface-emitting laser and photodiode arrays with CMOS ICs. The Si carrier also includes optical vias (holes) for optical access to conventional surface-emitting 850 nm optoelectronic devices. The 48-channel 3-D transceiver optochips are flip-chip soldered to organic carriers to form transceiver optomodules. Fully functional optomodules with 24 transmitter + 24 receiver channels were assembled and characterized with transmitters operating up to 20 Gb/s/ch and receivers up to 15 Gb/s/ch. At 15 Gb/s, the 48-channel optomodules provide a bidirectional aggregate bandwidth of 360 Gb/s. In addition, o-PCBs have been developed using a 48-channel flex waveguide assembly attached to FR4 electronic boards. Incorporation of waveguide turning mirrors and lens arrays facilitates optical coupling to/from the o-PCB. Assembly of optomodules to the o-PCB using a ball grid array process provides both electrical and optical interconnections. An initial demonstration of the full module-to-module optical link achieved >; 20 bidirectional links at 10 Gb/s. At 15 Gb/s, operation at a bit error ratio of <; 10- 12 was demonstrated for 15 channels in each direction, realizing a record o-PCB link with a 225 Gb/s bidirectional aggregate data rate.

Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth

We report a resonant cavity Si photodiode grown by merged epitaxial lateral overgrowth. At a reverse bias of 5 V, the dark current was 2.7 pA and the bandwidth exceeded 34 GHz. The peak quantum efficiencies ranged from 42% at 704 nm to 31% at 836 nm. This is the highest speed reported for a Si p-i-n photodiode and the highest bandwidth-efficiency product for any Si-based photodetector.

CMOS-Integrated Optical Receivers for On-Chip Interconnects

This paper reviews recent progress on CMOS-integrated optical receivers for on-chip interconnects, which have become attractive for achieving communication bandwidth well beyond terabit-per-second with low-power consumption. The design of optical receivers and the performance metrics required from the photodetector (PD) for a low-power receiver is discussed. The progress in waveguide-integrated germanium PDs is reviewed in depth by exploring various optical/electrical designs, and the associated integration approaches for Ge films and metal contacts. The impact of design and integration on PD performance is evaluated by comparing reported results. Finally, the challenges of monolithic integration of PDs within standard CMOS process are discussed.