Connor G. Bischak

Atomically thin two-dimensional organic-inorganic hybrid perovskites

Flat perovskite crystals Bulk crystals and thick films of inorganic-organic perovskite materials such as CH3NH3PbI3 have shown promise as active material for solar cells. Dou et al. show that thin films—a single unit cell or a few unit cells thick—of a related composition, (C4H9NH3)2PbBr4, form squares with edges several micrometers long. These materials exhibit strong and tunable blue photoluminescence. Science, this issue p. 1518 Several inorganic-organic perovskite materials grown as atomically thin crystals exhibit strong photoluminescence. Organic-inorganic hybrid perovskites, which have proved to be promising semiconductor materials for photovoltaic applications, have been made into atomically thin two-dimensional (2D) sheets. We report the solution-phase growth of single- and few-unit-cell-thick single-crystalline 2D hybrid perovskites of (C4H9NH3)2PbBr4 with well-defined square shape and large size. In contrast to other 2D materials, the hybrid perovskite sheets exhibit an unusual structural relaxation, and this structural change leads to a band gap shift as compared to the bulk crystal. The high-quality 2D crystals exhibit efficient photoluminescence, and color tuning could be achieved by changing sheet thickness as well as composition via the synthesis of related materials.

Heterogeneous Charge Carrier Dynamics in Organic–Inorganic Hybrid Materials: Nanoscale Lateral and Depth-Dependent Variation of Recombination Rates in Methylammonium Lead Halide Perovskite Thin Films

We reveal substantial luminescence yield heterogeneity among individual subdiffraction grains of high-performing methylammonium lead halide perovskite films by using high-resolution cathodoluminescence microscopy. Using considerably lower accelerating voltages than is conventional in scanning electron microscopy, we image the electron beam-induced luminescence of the films and statistically characterize the depth-dependent role of defects that promote nonradiative recombination losses. The highest variability in the luminescence intensity is observed at the exposed grain surfaces, which we attribute to surface defects. By probing deeper into the film, it appears that bulk defects are more homogeneously distributed. By identifying the origin and variability of a surface-specific loss mechanism that deleteriously impacts device efficiency, we suggest that producing films homogeneously composed of the highest-luminescence grains found in this study could result in a dramatic improvement of overall device efficiency. We also show that although cathodoluminescence microscopy is generally used only to image inorganic materials it can be a powerful tool to investigate radiative and nonradiative charge carrier recombination on the nanoscale in organic-inorganic hybrid materials.

Origin of Reversible Photoinduced Phase Separation in Hybrid Perovskites

The distinct physical properties of hybrid organic-inorganic materials can lead to unexpected nonequilibrium phenomena that are difficult to characterize due to the broad range of length and time scales involved. For instance, mixed halide hybrid perovskites are promising materials for optoelectronics, yet bulk measurements suggest the halides reversibly phase separate upon photoexcitation. By combining nanoscale imaging and multiscale modeling, we find that the nature of halide demixing in these materials is distinct from macroscopic phase separation. We propose that the localized strain induced by a single photoexcited charge interacting with the soft, ionic lattice is sufficient to promote halide phase separation and nucleate a light-stabilized, low-bandgap, ∼8 nm iodide-rich cluster. The limited extent of this polaron is essential to promote demixing because by contrast bulk strain would simply be relaxed. Photoinduced phase separation is therefore a consequence of the unique electromechanical properties of this hybrid class of materials. Exploiting photoinduced phase separation and other nonequilibrium phenomena in hybrid materials more generally could expand applications in sensing, switching, memory, and energy storage.

Structural, optical, and electrical properties of phase-controlled cesium lead iodide nanowires

Cesium lead iodide (CsPbI3), in its black perovskite phase, has a suitable bandgap and high quantum efficiency for photovoltaic applications. However, CsPbI3 tends to crystalize into a yellow non-perovskite phase, which has poor optoelectronic properties, at room temperature. Therefore, controlling the phase transition in CsPbI3 is critical for practical application of this material. Here we report a systematic study of the phase transition of one-dimensional CsPbI3 nanowires and their corresponding structural, optical, and electrical properties. We show the formation of perovskite black phase CsPbI3 nanowires from the non-perovskite yellow phase through rapid thermal quenching. Post-transformed black phase CsPbI3 nanowires exhibit increased photoluminescence emission intensity with a shrinking of the bandgap from 2.78 to 1.76 eV. The perovskite nanowires were photoconductive and showed a fast photoresponse and excellent stability at room temperature. These promising optical and electrical properties make the perovskite CsPbI3 nanowires attractive for a variety of nanoscale optoelectronic devices.

Spatially resolved multicolor CsPbX3 nanowire heterojunctions via anion exchange

Significance Semiconductor heterojunction is a key building block in modern electronics and optoelectronics. The accurate control over the composition, band gap, energy level (band bending), and doping level is the foundation of ideal functional heterojunctions. We demonstrate highly spatially resolved heterojunctions in a type of semiconductor, halide perovskites, which show great potential in photovoltaic and solid-state lighting applications. We accomplish this through the combination of facile anion-exchange chemistry with nanofabrication techniques. The halide perovskite nanowire heterojunction provides an ideal platform for fundamental studies and technological applications. For example, multicolor lasers or LEDs could be made using such localized heterojunctions; quantitative interdiffusion and ion migration dynamics could be examined at elevated temperatures, etc. Halide perovskites are promising semiconductor materials for solution-processed optoelectronic devices. Their strong ionic bonding nature results in highly dynamic crystal lattices, inherently allowing rapid ion exchange at the solid–vapor and solid–liquid interface. Here, we show that the anion-exchange chemistry can be precisely controlled in single-crystalline halide perovskite nanomaterials when combined with nanofabrication techniques. We demonstrate spatially resolved multicolor CsPbX3 (X = Cl, Br, I, or alloy of two halides) nanowire heterojunctions with a pixel size down to 500 nm with the photoluminescence tunable over the entire visible spectrum. In addition, the heterojunctions show distinct electronic states across the interface, as revealed by Kelvin probe force microscopy. These perovskite heterojunctions represent key building blocks for high-resolution multicolor displays beyond current state-of-the-art technology as well as high-density diode/transistor arrays.

Tunable Polaron Distortions Control the Extent of Halide Demixing in Lead Halide Perovskites

Photoinduced phase separation in mixed halide perovskites emerges from their electro-mechanical properties and high ionic conductivities, resulting in photoinduced I--rich charge carrier traps that diminish photovoltaic performance. Whether photoinduced phase separation stems from the polycrystalline microstructure or is an intrinsic material property has been an open question. We investigate the nanoscale photoinduced behavior of single-crystal mixed Br-/I- methylammonium (MA+) lead halide perovskite (MAPb(Br xI1- x)3) nanoplates, eliminating effects from extended structural defects. Even in these nanoplates, we find that phase separation occurs, resulting in I--rich clusters that are nucleated stochastically and stabilized by polarons. Upon lowering the electron-phonon coupling strength by partially exchanging MA+ for Cs+, a phase-separated steady state is not reached, nevertheless transient I- clustering still occurs. Our results, supported by multiscale modeling, demonstrate that photoinduced phase separation is an intrinsic property of mixed halide perovskites, the extent and dynamics of which depends on the electron-phonon coupling strength.

Noninvasive Cathodoluminescence-Activated Nanoimaging of Dynamic Processes in Liquids

In situ electron microscopy provides remarkably high spatial resolution, yet electron beam irradiation often damages soft materials and perturbs dynamic processes, requiring samples to be very robust. Here, we instead noninvasively image the dynamics of metal and polymer nanoparticles in a liquid environment with subdiffraction resolution using cathodoluminescence-activated imaging by resonant energy transfer (CLAIRE). In CLAIRE, a free-standing scintillator film serves as a nanoscale optical excitation source when excited by a low energy, focused electron beam. We capture the nanoscale dynamics of these particles translating along and desorbing from the scintillator surface and demonstrate 50 ms frame acquisition and a range of imaging of at least 20 nm from the scintillator surface. Furthermore, in contrast with in situ electron microscopy, CLAIRE provides spectral selectivity instead of relying on scattering alone. We also demonstrate through quantitative modeling that the CLAIRE signal from metal nanoparticles is impacted by multiplasmonic mode interferences. Our findings demonstrate that CLAIRE is a promising, noninvasive approach for super-resolution imaging for soft and fluid materials with high spatial and temporal resolution.

Phase-transition–induced p-n junction in single halide perovskite nanowire

Significance Functional semiconductor heterojunctions are fundamental units for building up advanced optoelectronics and circuits. Halide perovskites, representing a new class of semiconductors with soft and reconfigurable ionic bonding, hold promise for a variety of applications because of their many unusual, tunable physical properties. This paper reports the formation of the current-rectifying p-n heterojunction in single-crystalline CsSnI3 nanowires via localized phase transition between the n-type yellow and p-type black phases. We attribute the distinction of majority carrier types in these two phases to the different formation energies of the cation and anion vacancies. The present approach to heterojunction formation could inspire deeper understanding of phase-transition dynamics and enable precise control over the design of functional heterostructures using halide perovskite building blocks. Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

Local Variations in the Surface Plasmon at Al Grain Boundaries and its Effect on the Optical Properties of Al Nanostructures

where ωsp is the surface plasmon frequency, ωp is the bulk plasmon frequency, and ε2 is the dielectric function of the layer above the metal surface. With an inert metal such as Au, the surface plasmon frequency will stay constant in vacuum. Therefore, inherent variations to the LSPRs, in Au nanostructures, are largely associated with changes in shape, microstructure, and surface roughness. However, Knight et. al. observed a different behavior in Al disks, where the dipolar LSPR energy varied depending on the thickness of Al oxide layer [1]. Shifts in the LSPR were attributed to changes in the dielectric function of the oxide layer, which caused the surface plasmon to shift in energy. Decoupling the roll of shape, microstructure, and composition is necessary for successful design of Al plasmonic devices. Monochromated EELS in STEM has shown to be an effective technique in studying how microstructural changes influence the behavior of LSPR due to the high spatial resolution [2]. In this study Monochromated EELS and STEM shows that the surface plasmon varies locally across lithographically defined Al triangles, especially at the triple point between the grain boundary and the surface oxide layer.