Constantine N. Anagnostopoulos

Steady-state photocarrier collection in silicon imaging devices

Solid-state imagers lose resolution when photocarriers generated in one imaging site diffuse to a nearby site where they are collected. These processes are modeled by solving the steady-state diffusion equation for minority carriers. A source term represents the absorption of photons and the generation of photocarriers, and a linear term represents the loss of photocarriers by recombination. This is equivalent to studying the Helmholtz equation with an inhomogeneous term. The problem is simplified when the light source has symmetry. A line source or a cylindrically symmetric source leads to a two-dimensional problem. The approach of Seib, Crowell, and Labuda allows a solution by quadrature if the further assumption of a smooth top boundary is made. We calculate the integrated normal flux over each imaging site to see how many carriers diffuse from under the illuminated site to another site. We compare our predicted line- and point-spread functions to those measured on imagers and find reasonable agreement. This allows us to extract minority-carrier diffusion lengths. Further calculations show how the diffusion of carriers depends on the photon wavelength and the pixel size. We generalize Seibs approach and apply it to a solid-state imager covered with color filters. This allows us to see the extent of color mixing due to carrier diffusion. We also discuss a finite-difference solution of the diffusion equation that employs the method of conjugate gradients. This approach is useful for problems where the top boundary is not smooth.

Latch-up and image crosstalk suppression by internal gettering

Internal gettering can be used to reduce crosstalk in imagers and latch-up susceptibility in CMOS circuits. The internal gettering process forms defects in the bulk of the silicon wafers that are effective recombination sites for minority carriers in the substrate. Experimental and theoretical results are presented for the crosstalk reduction obtained in an area imager. Also, the current gain β of the parasitic lateral n-p-n transistors formed in the substrate in CMOS circuits was considerably lower for the internally gettered wafers. The trigger current needed to initiate latch-up in the n-p-n-p structures increased as 1/β, in accordance with the theory. A Monte Carlo method was developed to calculate the expected lateral transistor current gain. The calculated βs are in excellent agreement with the measured values.

A new method for deflecting liquid microjets

A new method is reported for deflecting a microscopic jet emanating from a nozzle away from the nozzle’s axis of symmetry. It relies on putting energy into the jet through an asymmetric heater embedded in the nozzle. This novel phenomenon is probed theoretically. It is shown that jet deflection is set by the competition among three effects. Two of these can be attributed to the variation with temperature of surface tension and the third to that of viscosity. Whether the contact line is fixed or free is shown to profoundly impact the extent of jet deflection at a given flow rate.

Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices

The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.

Micro-jet nozzle array for precise droplet metering and steering having increased droplet deflection

We present the architecture and fabrication method of a fluidic device with increased droplet deflection. The device is capable of producing picoliter size droplets precisely and steering them. The precision is a consequence of the reproducibility of the nozzles that are made using VLSI technology and tools. In addition, the droplet size is determined by the precise timing of applied heat pulses. We present both experimental and modeling results.

Reduction of lateral diffusion of photoelectrons in silicon photodiode imager arrays by internal gettering

The lateral diffusion of photoelectrons to adjacent picture elements in a silicon linear photodiode array is reduced in substrates with a high density of oxygen precipitates formed by internal gettering. The signal due to diffusion in adjacent pixels, normalized to the illuminated pixel signal, was reduced by a factor of 1.6 for pixels with centers 48 µm apart and by a factor of 10 for pixels farther apart; there was no significant decrease in sensor quantum efficiency. These results are interpreted with a numerical model that solves the three-dimensional diffusion equation for a substrate with different lifetimes in the surface and internal regions.

Latch-up and image crosstalk suppression by internal gettering [in CMOS]

Internal gettering can be used to reduce crosstalk in imagers and latch-up susceptibility in CMOS circuits. The internal gettering process forms defects in the bulk of the silicon wafers that are effective recombination sites for minority carriers in the substrate. Experimental and theoretical results are presented for the crosstalk reduction obtained in an area imager. Also, the current gain β of the parasitic lateral n-p-n transistors formed in the substrate in CMOS circuits was considerably lower for the internally gettered wafers. The trigger current needed to initiate latch-up in the n-p-n-p structures increased as 1/β, in accordance with the theory. A Monte Carlo method was developed to calculate the expected lateral transistor current gain. The calculated βs are in excellent agreement with the measured values.

Few gold stars for precollege education

Educators have been struggling to improve the math and science proficiency and technological literacy of US primary and secondary school students for more than 40 years-with meager results. But many new initiatives at the local, state, and national levels offer new hope for turning the tide. Some of these initiatives are described.

Monte Carlo Simulation of the Photoelectron Crosstalk in Silicon Imaging Devices

The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.