Corneliu Nistor

Magnetic remanence in single atoms

Stable magnets from single atoms An important goal in molecular magnetism is to create a permanent magnet from a single atom. Metal atoms adsorbed on surfaces can develop strong magnetization in an applied field (paramagnetism). Donati et al. show that single holmium atoms adsorbed on a magnesium oxide film grown on a silver substrate show residual magnetism for temperatures up to 30 K and bistabilty that lasts for 1500 s at 10 K (see the Perspective by Khajetoorians and Heinrich). The atom avoids spin relaxation by a combination of quantum-state symmetry and by the oxide film preventing the spin from interacting with the underlying metal via tunneling. Science, this issue p. 318; see also p. 296 A single holmium atom on a magnesium oxide film can retain its magnetic moment up to 30 kelvin. [Also see Perspective by Khajetoorians and Heinrich] A permanent magnet retains a substantial fraction of its saturation magnetization in the absence of an external magnetic field. Realizing magnetic remanence in a single atom allows for storing and processing information in the smallest unit of matter. We show that individual holmium (Ho) atoms adsorbed on ultrathin MgO(100) layers on Ag(100) exhibit magnetic remanence up to a temperature of 30 kelvin and a relaxation time of 1500 seconds at 10 kelvin. This extraordinary stability is achieved by the realization of a symmetry-protected magnetic ground state and by decoupling the Ho spin from the underlying metal by a tunnel barrier.

Exchange Biasing Single Molecule Magnets: Coupling of TbPc2 to Antiferromagnetic Layers

We investigate the possibility to induce exchange bias between single molecule magnets (SMM) and metallic or oxide antiferromagnetic substrates. Element-resolved X-ray magnetic circular dichroism measurements reveal, respectively, the presence and absence of unidirectional exchange anisotropy for TbPc(2) SMM deposited on antiferromagnetic Mn and CoO layers. TbPc(2) deposited on Mn thin films present magnetic hysteresis and a negative horizontal shift of the Tb magnetization loop after field cooling, consistent with the observation of pinned spins in the Mn layer coupled parallel to the Tb magnetic moment. Conversely, molecules deposited on CoO substrates present paramagnetic magnetization loops with no indication of exchange bias. These experiments demonstrate the ability of SMM to polarize the pinned uncompensated spins of an antiferromagnet during field-cooling and realize metal-organic exchange-biased heterostructures using antiferromagnetic pinning layers.

Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 \ifmmode^\circ\else\textdegree\fi{}C and characterized using x-ray-absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (fieldlike) and longitudinal (antidampinglike) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the fieldlike and antidamping torques. Measurements of the switching probability using sub-\ensuremath{\mu}s current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 and 270 \ifmmode^\circ\else\textdegree\fi{}C.

Versatile magneto-optic Kerr effect polarimeter for studies of domain-wall dynamics in magnetic nanostructures

This article describes a versatile instrument capable of probing magnetic domain-wall dynamics in microstructured thin films. The instrument combines a state-of-the-art scanning magneto-optic Kerr effect polarimeter that incorporates high-bandwidth signal detection, an integrated broadband magnet system, and a microwave probe station. Together, these subsystems enable a broad range of studies of field and current-driven domain-wall dynamics in submicrometer magnetic structures and devices. Domain-wall motion can be probed with 2 m spatial resolution and less than 2 ns temporal resolution. That motion can be driven by magnetic fields of up to 100 Oe amplitude with sinusoidal 20 MHz or user-defined wave forms 20 ns rise time or by electric currents from dc to 10 GHz. A detailed description of the instrument is provided as well as several experiments highlighting its capabilities, including hysteresis loop shape and magnetic energy loss measurements spanning ten decades of drive frequency; spatially and temporally resolved measurements of domain-wall propagation in submicrometer magnetic wires; and mobility measurements of fieldand current-driven domain-wall motion.

Structural and magnetic properties of planar nanowire arrays of Co grown on oxidized vicinal silicon (111) templates

We fabricated planar arrays of Co nanowires (NWs) on oxidized step-bunched Si (111) templates using shallow angle deposition. These planar NW arrays exhibit ferromagnetic behavior at room temperature for NW widths down to 25 nm. The NWs possess polycrystalline character with hcp-crystal structure, and present a lightly oxidized interface when capped with MgO. The magnetic anisotropy of the NW array is dominated by the shape anisotropy, which keeps the magnetization in-plane with easy axis parallel to the wires. By reducing the inter-wire separation, we obtain NW arrays with reduced coercivity demonstrating the importance of magneto-static interactions in determining the magnetic properties of the NWs.

Magnetic Properties of Metal–Organic Coordination Networks Based on 3d Transition Metal Atoms

The magnetic anisotropy and exchange coupling between spins localized at the positions of 3d transition metal atoms forming two-dimensional metal–organic coordination networks (MOCNs) grown on a Au(111) metal surface are studied. In particular, we consider MOCNs made of Ni or Mn metal centers linked by 7,7,8,8-tetracyanoquinodimethane (TCNQ) organic ligands, which form rectangular networks with 1:1 stoichiometry. Based on the analysis of X-ray magnetic circular dichroism (XMCD) data taken at T = 2.5 K, we find that Ni atoms in the Ni–TCNQ MOCNs are coupled ferromagnetically and do not show any significant magnetic anisotropy, while Mn atoms in the Mn–TCNQ MOCNs are coupled antiferromagnetically and do show a weak magnetic anisotropy with in-plane magnetization. We explain these observations using both a model Hamiltonian based on mean-field Weiss theory and density functional theory calculations that include spin–orbit coupling. Our main conclusion is that the antiferromagnetic coupling between Mn spins and the in-plane magnetization of the Mn spins can be explained by neglecting effects due to the presence of the Au(111) surface, while for Ni–TCNQ the metal surface plays a role in determining the absence of magnetic anisotropy in the system.