Cosimo Lacava

Ultra-high four wave mixing efficiency in slot waveguides with silicon nanocrystals

We report on wavelength conversion through four-wave-mixing in silicon slot-waveguides with embedded silicon nanocrystals. The combination of strong optical confinement and Si:nc nonlinearity provides a huge waveguide nonlinear coefficient γ = 1100 W−1m−1. Moreover, the improvement in the fabrication procedure allowed a loss reduction with respect to previous reported structures, enabling the achievement of an extreme value for the conversion efficiency which represents the best result ever reported in the scientific literature.

Nonlinear properties of AlGaAs waveguides in continuous wave operation regime

Aluminum Gallium Arsenide (AlGaAs) is an attractive platform for the development of integrated optical circuits for all-optical signal processing thanks to its large nonlinear coefficients in the 1.55-μm telecommunication spectral region. In this paper we discuss the results of the nonlinear continuous-wave optical characterization of AlGaAs waveguides at a wavelength of 1.55 μm. We also report the highest value ever reported in the literature for the real part of the nonlinear coefficient in this material (Re(γ) ≈521 W(-1)m(-1)).

Low TPA and free-carrier effects in silicon nanocrystal-based horizontal slot waveguides

We present the characterization of the ultrafast nonlinear dynamics of a CMOS-compatible horizontal-slot waveguide with silicon nanocrystals. Results are compared to strip silicon waveguides, and modeled with nonlinear split-step calculations. The extracted parameters show that the slot waveguide has weaker carrier effects and better nonlinear figure-of-merit than the strip waveguides.

Integrated nonlinear Mach Zehnder for 40 Gbit/s all-optical switching

We report on the experimental demonstration of a novel silicon based fully integrated nonlinear Mach Zehnder device. A standard silicon waveguide is used as a nonlinear arm, conversely a large mode SU-8 waveguide acts as a purely linear arm. Given this asymmetry, an intensity dependent phase shift can be introduced between the two interferometric arms. Thanks to a fine tuning of the silicon arm optical properties, a low power, ultrafast, picosecond operation is demonstrated, allowing the use of this device for ultrafast all-optical signal processing in high density communication networks.

Nonlinear characterization of hydrogenated amorphous silicon waveguides and analysis of carrier dynamics

In this paper, we determine the optical nonlinear coefficient of hydrogenated amorphous silicon (a-Si:H) waveguides. Up to date, the data reported in the scientific literature for similar structures show a very large variability and the final assessment of their nonlinear performance is still an open issue. We performed a complete and careful characterization of more than 50 waveguides. A nonlinear coefficient of 790 + j20 W−1 m−1 was found, confirming that a-Si:H is a good candidate for nonlinear silicon photonic devices. Nevertheless, free-carrier-dynamics exhibits a recombination time in the nanosecond range, which can hinder their exploitation in ultrafast applications requiring high-power optical beams.

Tunable Q-factor silicon microring resonators for ultra-low power parametric processes

A compact silicon ring resonator is demonstrated that allows simple electrical tuning of the ring coupling coefficient and Q-factor and therefore the resonant enhancement of on-chip nonlinear optical processes. Fabrication-induced variation in designed coupling fraction, crucial in the resonator performance, can be overcome using this post-fabrication trimming technique. Tuning of the microring resonator across the critical coupling point is demonstrated, exhibiting a Q-factor tunable between 9000 and 96,000. Consequently, resonantly enhanced four-wave mixing shows tunable efficiency between -40 and -16.3  dB at an ultra-low on-chip pump power of 0.7 mW.

Si-rich silicon nitride for nonlinear signal processing applications

Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm−1). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

Ultra-Compact Amorphous Silicon Waveguide for Wavelength Conversion

In this letter, we demonstrate, for the first time, successful four wave mixing (FWM)-based wavelength conversion of binary phase shift keyed (BPSK) and quadrature phase shift keyed (QPSK) signals, at 20-Gb/s bitrate, in a 1-mm long amorphous silicon waveguide. A maximum FWM-efficiency of -26 dB was achieved by employing a pump power of just 70 mW, establishing this technology as a contender for the development of ultra-compact, low power, silicon photonics wavelength converter. Bit error ratio measurements demonstrated successful conversion with less than 1 dB penalty level, for both BPSK and QPSK signals (at BER = 10-5).

Fibre-optic metadevice for all-optical signal modulation based on coherent absorption

Recently, coherent control of the optical response of thin films in standing waves has attracted considerable attention, ranging from applications in excitation-selective spectroscopy and nonlinear optics to all-optical image processing. Here, we show that integration of metamaterial and optical fibre technologies allows the use of coherently controlled absorption in a fully fiberized and packaged switching metadevice. With this metadevice, which controls light with light in a nanoscale plasmonic metamaterial film on an optical fibre tip, we provide proof-of-principle demonstrations of logical functions XOR, NOT and AND that are performed within a coherent fibre network at wavelengths between 1530 and 1565 nm. The metadevice has been tested at up to 40 gigabits per second and sub-milliwatt power levels. Since coherent absorption can operate at the single-photon level and with 100 THz bandwidth, we argue that the demonstrated all-optical switch concept has potential applications in coherent and quantum information networks.Here, the authors show that integration of metamaterial and optical fibre technologies enables all-optical XOR, NOT and AND logical functions that are performed at up to 40 gigabits per second with few femtojoules per bit energy consumption within a coherent fully fiberized network.

Wavelength conversion of complex modulation formats in a compact SiGe waveguide

We report a nonlinear signal processing system based on a SiGe waveguide suitable for high spectral efficiency data signals. Four-wave-mixing (FWM)-based wavelength conversion of 10-Gbaud 16-Quadrature amplitude modulated (QAM) and 64-QAM signals is demonstrated with less than -10-dB conversion efficiency (CE), 36-dB idler optical signal-to-noise ratio (OSNR), negligible bit error ratio (BER) penalty and a 3-dB conversion bandwidth exceeding 30nm. The SiGe device was CW-pumped and operated in a passive scheme without giving rise to any two-photon absorption (TPA) effects.