Costel Sorin Cojocaru

Diffusion Mechanism of Lithium Ion through Basal Plane of Layered Graphene

Coexistence of both edge plane and basal plane in graphite often hinders the understanding of lithium ion diffusion mechanism. In this report, two types of graphene samples were prepared by chemical vapor deposition (CVD): (i) well-defined basal plane graphene grown on Cu foil and (ii) edge plane-enriched graphene layers grown on Ni film. Electrochemical performance of the graphene electrode can be split into two regimes depending on the number of graphene layers: (i) the corrosion-dominant regime and (ii) the lithiation-dominant regime. Li ion diffusion perpendicular to the basal plane of graphene is facilitated by defects, whereas diffusion parallel to the plane is limited by the steric hindrance that originates from aggregated Li ions adsorbed on the abundant defect sites. The critical layer thickness (l(c)) to effectively prohibit substrate reaction using CVD-grown graphene layers was predicted to be ∼6 layers, independent of defect population. Our density functional theory calculations demonstrate that divacancies and higher order defects have reasonable diffusion barrier heights allowing lithium diffusion through the basal plane but neither monovacancies nor Stone-Wales defect.

High-Rate Capability Silicon Decorated Vertically Aligned Carbon Nanotubes for Li-Ion Batteries

The concept of a hybrid nanostructured collector made of thin vertically aligned carbon nanotubes (CNTs) decorated with Si nanoparticles provides high power density anodes in lithium-ion batteries. An impressive rate capability is achieved due to the efficient electronic conduction of CNTs combined with well defined electroactive Si nanoparticles: capacities of 3000 mAh g−1 at 1.3C and 800 mAh g−1 at 15C are achieved.

Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films

The synthesis of few-layered graphene is performed by ion implantation of carbon species in thin nickel films, followed by high temperature annealing and quenching. Although ion implantation enables a precise control of the carbon content and of the uniformity of the in-plane carbon concentration in the Ni films before annealing, we observe thickness non-uniformities in the synthesized graphene layers after high temperature annealing. These non-uniformities are probably induced by the heterogeneous distribution/topography of the graphene nucleation sites on the Ni surface. Taken altogether, our results indicate that the number of graphene layers on top of Ni films is controlled by the nucleation process on the Ni surface rather than by the carbon content in the Ni film.

All-printed infrared sensor based on multiwalled carbon nanotubes

This contribution deals with all-printed infrared sensors fabricated using multiwalled carbon nanotubes deposited on a flexible polyimide substrate. A high responsivity of up to 1.2 kV/W is achieved at room temperature in ambient air. We evidence a strong dependence of the device transduction mechanism on the surrounding atmosphere, which can be attributed to bolometric effect interference with water molecule desorption upon irradiation.

Current Saturation in Field Emission from H-Passivated Si Nanowires

This paper explores the field emission (FE) properties of highly crystalline Si nanowires (NWs) with controlled surface passivation. The NWs were batch-grown by the vapor-liquid-solid process using Au catalysts with no intentional doping. The FE current-voltage characteristics showed quasi-ideal current saturation that resembles those predicted by the basic theory for emission from semiconductors, even at room temperature. In the saturation region, the currents were extremely sensitive to temperature and also increased linearly with voltage drop along the nanowire. The latter permits the estimation of the doping concentration and the carrier lifetime, which is limited by surface recombination. The conductivity could be tuned over 2 orders of magnitude by in situ hydrogen passivation/desorption cycles. This work highlights the role of dangling bonds in surface leakage currents and demonstrates the use of hydrogen passivation for optimizing the FE characteristics of Si NWs.

Dual graphene films growth process based on plasma-assisted chemical vapor deposition

Graphene has been given great attention to overcome current physical limits in electronic devices and its synthesis routes are developing rapidly. However, graphene film manufacturing is still hindered by either low throughput or low material quality. Here, we present a low temperature PE-CVD assisted graphene growth process on nickel thin films deposited on silicon oxide. Furthermore, our process leads to the formation of two separated graphene films, one at the nickel surface and the other at the Ni/SiO2 interface. A mixture of methane and hydrogen was employed as carbon precursor and activated by DC plasma. We found that the number of graphene layers on top of nickel can be controlled by carbon exposure time, from 1 to around 10 layers. Further annealing process of samples allowed us to achieve improved graphene films by the dissolution and segregation-crystallization process.

Toward full carbon interconnects: High conductivity of individual carbon nanotube to carbon nanotube regrowth junctions

A versatile chemical vapor deposition (CVD) based method for the fabrication and electrical measurement of individual carbon nanotube junctions was developed. ferritin or Fe particles were grafted on multiwalled carbon nanotubes (MWNTs) and used as catalysts for the subsequent growth of secondary MWNT by CVD. Junctions were then individually connected. The conductivities of the MWNTs and of the junction were measured. Statistical data show that the conductance of the MWNT-MWNT junction is similar to that of MWNT. This result paves the way for the use of carbon nanotubes as electrical interconnects in electronic applications.

Synthesis of conducting transparent few-layer graphene directly on glass at 450??C

Post-growth transfer and high growth temperature are two major hurdles that research has to overcome to get graphene out of research laboratories. Here, using a plasma-enhanced chemical vapour deposition process, we demonstrate the large-area formation of continuous transparent graphene layers at temperatures as low as 450 °C. Our few-layer graphene grows at the interface between a pre-deposited 200 nm Ni catalytic film and an insulating glass substrate. After nickel etching, we are able to measure the optical transmittance of the layers without any transfer. We also measure their sheet resistance directly and after inkjet printing of electrical contacts: sheet resistance is locally as low as 500 Ω sq⁻¹. Finally the samples equipped with printed contacts appear to be efficient humidity sensors.

ATOMIC HYDROGEN-DRIVEN SIZE CONTROL OF CATALYTIC NANOPARTICLES FOR SINGLE-WALLED CARBON NANOTUBE GROWTH

The effects of an atomic hydrogen (Hat ) pretreatment of the catalyst layer on the low tem- perature growth of single-walled carbon nanotubes (SWCNTs) have been investigated using a modified catalytic chemical vapor deposition system. Well-defined and isolated individual Fe nanoparticles as a catalyst are successfully formed on the defects with high trapping energy which are created on the Al2O3 surface by Hat pretreatment, yielding highly dense SWCNTs. The pretreatment mechanism of Hat , compared to H2 , is also discussed. It was also found that the quality of SWCNTs can be enhanced when Hat is flowed with CH4 during nanotubes growth at low temperature. In this case, the undesired carbon products and defects on catalyst seeds and nanotube walls can be selectively removed by Hat . Therefore it is essential to use Hat in the pretreatment stage for increasing catalytic activity and to keep the size of nanoparticles in the nm range. Hat can also be employed in growth stage for enhancing SWCNTs quality and density at low temperature.

Electrical-field-induced structural change and charge transfer of lanthanide–salophen complexes assembled on carbon nanotube field effect transistor devices

The application of a negative gate voltage on a carbon nanotube field effect transistor decorated by a binuclear Tb(III) complex leads to the generation of a negatively charged mononuclear one, presenting an electron density transfer to the nanotube and ambipolar behaviour.