D Balashov

Implementation of superconductor-ferromagnet-superconductor pi-shifters in superconducting digital and quantum circuits

Interrupting a superconducting loop with a thin ferromagnetic film creates a so-called π-Josephson junction that shifts the phase of a current flowing in the loop by 180°. A demonstration of the use of π-junctions in a variety of device structures suggests they could enable the development of a new class of superconducting logic circuits.

SINIS Josephson junctions for programmable Josephson voltage standard circuits

Nonhysteretic Josephson junctions with a superconductor-insulator-normal metal-insulator-superconductor (SINIS) structure fabricated using the reliable Nb-AlO/sub x/ technology have been used for the design and fabrication of a 1-V inherently stable Josephson voltage standard. The superconducting circuit can be driven at the same microwave frequencies as conventional SIS circuits. The microwave-induced 1-V step is suitable for calibration purposes. The successful operation of the 1-V circuit is due to an internal, phase-locked oscillation of all SINIS junctions which are embedded in a low-impedance strip-line. The microwave power required for exciting the coherent oscillation is very low and allows the integration of low power sources. Even operation without any external microwave source appears to be possible.

A single flux quantum circuit with a ferromagnet-based Josephson π-junction

We report on the functionality of a Nb-based superconducting single flux quantum (SFQ) toggle flip-flop (TFF) circuit, comprising a complementary superconductor–ferromagnet–superconductor (SFS) Josephson π-junction. The SFS junction was used as a phase shifting element inserted in the storage loop of the TFF. The fabricated circuits demonstrated correct functionality with the operation parameter ranges of ± 20%. The application of SFS π-junctions makes the SFQ circuits very compact, may substantially improve their stability, and may also be suitable for integration with Josephson quantum circuits (qubits).

Superconductor-insulator-normal- conductor-insulator-superconductor process development for integrated circuit applications

The paper reports on recent developments in a new technology process in LTS implementation to fabricate intrinsically shunted tunnel junctions. The process has been realized in SINIS multilayer thin-film technology. In various test series, circuits containing a large variety of single junctions and junction arrays of different contact areas and sizes were fabricated and measured. By variation of the oxidation parameters the fabrication process has been optimized for application in integrated circuits operating in RSFQ impulse logic. The junction parameter values realized for the critical current density range to up to about , those for the characteristic voltage to up to about . The junctions show nearly non-hysteretic current-voltage characteristics; the intra-wafer parameter spread is below 10%. The junctions realized fulfil the requirements imposed for digital RSFQ circuit operation at clock frequencies in the lower GHz frequency range.

RSFQ circuitry realized in a SINIS technology process

We have developed integrated circuits in rapid single flux quantum (RSFQ) impulse logic based on intrinsically shunted tunnel junctions as the active circuit elements. The circuits have been fabricated using superconductor-insulator-normalconductor-insulator-superconductor (SINIS) multilayer technology. The paper presents experimental results of the operation of various RSFQ circuits realized in different designs and layouts. The circuits comprise dc/SFQ and SFQ/dc converters, Josephson transmission lines (JTLs), T-flipflops, and analog key components. Functionality has been proved; the circuits have been found to operate correctly in switching. The circuits investigated have a critical current density of j/sub C/=400 A/cm/sup 2/ and a characteristic voltage of V/sub C/=165 /spl mu/V, the area of the smallest junction is A=24 /spl mu/m/sup 2/. The junctions exhibit nearly hysteresis-free current-voltage characteristics (hysteresis: less than 7%), the intra-wafer parameter spread for j/sub C/ is below /spl plusmn/8%. The margins of the bias current I/sub b/ of the circuits have been experimentally determined and found to be larger than /spl plusmn/24%. At preset, constant values of I/sub b/, the range of a separate bias current I/sub bsw/ fed to a switching stage integrated between two segments of JTLs is fully covered by the operation margins which are larger than /spl plusmn/56%.

SINIS process development for integrated circuits with characteristic voltages exceeding 250 /spl mu/V

At PTB, the fabrication process in Nb-Al/Al/sub x/O/sub y//Al/Al/sub x/O/sub y//Al-Nb SINIS multilayer technology has been improved to raise the characteristic voltage of SINIS two-tunnel Josephson junctions up to V/sub C/=I/sub C/R/sub n/=245 /spl mu/V. The process has been realized in LTS implementation. Various sets of the test wafers and wafers containing dc/SFQ and SFQ/dc converters, Josephson transmission lines, and T-flipflop circuits were fabricated and measured. The critical current densities of the junctions have been varied in the range from 70 A/cm/sup 2/ to 2.2 kA/cm/sup 2/ with corresponding characteristic voltages of V/sub C/=55 /spl mu/V and 245 /spl mu/V at the temperature of 4.2 K. The junctions show nearly hysteresis-free behaviour (less than 15%), the intra-wafer parameter spread is smaller than /spl plusmn/10%. RSFQ circuits have been realized with operation margins of the bias currents larger than /spl plusmn/20%.

Passive Phase Shifter for Superconducting Josephson Circuits

Quantized values of magnetic flux trapped in a superconducting loop enable a new type of passive phase shifting elements. These elements can be incorporated into digital Josephson circuits making their design compact. We have proven the functionality of such phase shifters fabricated in conventional Nb/Al trilayer technology. We report on the successful low speed operation of a rapid single flux quantum toggle flip-flop circuit with the integrated passive pi-phase shifting element.

SINIS fabrication process for realizing integrated circuits in RSFQ impulse logic

At PTB, a new type of fabrication process has been developed to verify rapid single flux quantum (RSFQ) integrated circuits based on intrinsically shunted two-tunnel Josephson junctions (JJs). The process has been realized in LTS implementation using SINIS technology. A variety of single JJs, junction arrays and test circuits have been fabricated and experimentally investigated. The critical current densities of the junctions were set to a nominal value of jC = 500 A cm-2, with values of the characteristic voltage VC equal to or larger than 160 µV. The JJs show nearly hysteresis-free behaviour (less than 10%); the intrawafer parameter spread is smaller than ±10%. Various basic RSFQ circuits have been realized with operation margins of bias currents of larger than ±20%.

Josephson junctions with nonlinear damping for rapid single-flux-quantum - qubit circuits

We demonstrate that shunting of Superconductor-Insulator-Superconductor Josephson junctions by Superconductor-Insulator-Normal metal (S-I-N) structures having pronounced non-linear I-V characteristics can remarkably modify the Josephson dynamics. In the regime of Josephson generation the phase behaves as an overdamped coordinate, while in the superconducting state the damping and current noise are strikingly small, that is vitally important for application of such junctions for readout and control of Josephson qubits. Superconducting Nb/AlO

High-frequency performance of RSFQ circuits realized in SINIS technology

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