D.C. Law

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

An efficiency of 40.7% was measured and independently confirmed for a metamorphic three-junction GaInP∕GaInAs∕Ge cell under the standard spectrum for terrestrial concentrator solar cells at 240 suns (24.0W∕cm2, AM1.5D, low aerosol optical depth, 25°C). This is the initial demonstration of a solar cell with over 40% efficiency, and is the highest solar conversion efficiency yet achieved for any type of photovoltaic device. Lattice-matched concentrator cells have now reached 40.1% efficiency. Electron-hole recombination mechanisms are analyzed in metamorphic GaxIn1−xAs and GaxIn1−xP materials, and fundamental power losses are quantified to identify paths to still higher efficiencies.

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs- and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

Progress of inverted metamorphic III–V solar cell development at Spectrolab

Inverted metamorphic (IMM) solar cells based on III–V materials have the potential to achieve solar conversion efficiencies that are significantly higher than todays state of the art solar cells which are based on the 3-junction GaInP/GaInAs/Ge design. The 3J IMM device architecture based on (Al)GaInP/GaInAs/GaInAs, for example, allows for a higher voltage solar cell by replacing the low bandgap Ge (0.67 eV) from the conventional 3J structure with the higher bandgap (∼1 eV) metamorphic GaInAs. The inverted growth simply allows the lattice-matched junctions (i.e., (Al)GaInP/GaInAs) to be grown first on the growth substrate, thereby minimizing or shielding them from the defects that arise from the metamorphic layers. Spectrolab has demonstrated 30.5% AM0 efficiency based on the 3J IMM cell architecture grown on a Ge substrate, with Voc = 2.963V, Jsc = 16.9 mA/cm2, and FF = 82.5%. In addition, 4J IMM cells have been demonstrated with Voc of 4.072 V and AM0 efficiency approaching 25%. With additional development, demonstrating 33% AM0 efficiency is expected in the near future. However, the IMM devices demand more complex processing requirements than conventional solar cells, and we demonstrate the capability to fabricate large area solar cells from standard Ge solar cell substrates.

Development of advanced space solar cells at Spectrolab

High efficiency multi-junction solar cells utilizing inverted metamorphic1,2 and semiconductor bonding technology3 are being developed at Spectrolab for use in one-sun space and near-space applications. Recently that effort has been extended to include low-concentration space applications. This paper will review the present state-of-the-art cell technologies at Spectrolab, with an emphasis on performance characterization data at both 1-sun and low-concentration operating conditions that these cells will experience in flight‥ A cell coupon utilizing IMM solar cells has been assembled and subjected to thermal cycling. Pre-and post thermal cycling data have been collected and there is no performance degradation or mechanical issues after the test.

35.8% space and 38.8% terrestrial 5J direct bonded cells

Spectrolab has fabricated a direct semiconductor bonded space solar cell with an efficiency of 35.8% under the AM0 space spectrum. Using a similar technology, Spectrolab has achieved a 5-junction (5J) direct bonded terrestrial cell with a record efficiency of 38.8% under the one-sun AM1.5G terrestrial spectrum. Efforts to further improve the 5J cell efficiency have focused on development of the top 3 junctions (T3J) grown on GaAs. Experiments with top 3J isotype cells have yielded an improvement of 1% in current and 100 mV in voltage for the T3J. Spectrolab has also made significant improvements in its direct bonding process. The improved process has increased bond strengths by more than a factor of 5 and eliminated issues with large voids.

Metamorphic and Lattice-Matched Solar Cells Under Concentration

Metamorphic III-V semiconductor materials offer access to bandgaps that span key portions of the solar spectrum, enabling new bandgap combinations in multijunction solar cells, and increasing both theoretical and practical efficiency limits for terrestrial concentrator cells. Experimental results are given for the quantum efficiency of metamorphic GaInAs solar cells with bandgap from 1.1 to 1.4 eV, and for metamorphic GaInP with both ordered and disordered group-III sublattices. Variable intensity Jsc vs. Voc measurements are used to compare recombination components due to n=1 and n=2 mechanisms in metamorphic and lattice-matched GaInAs, GaInP, and 3-junction solar cells. A record efficiency metamorphic GaInP/GaInAs/Ge 3-junction solar cell has been produced with 38.8% efficiency independently confirmed (241 suns, AM1.5D, low-AOD, 25degC), essentially equaling the performance of a lattice-matched 3-junction cell with 39.0% efficiency, the highest efficiency yet demonstrated and verified for a solar photovoltaic conversion device. With the combination of high-quality metamorphic materials that are increasingly less controlled by recombination at dislocations, and the higher efficiency limits afforded by freedom of lattice constant selection, practical terrestrial concentrator cell efficiencies well over 40% are expected in the near future

Advanced III-V Multijunction Cells for Space

III-V solar cells have become the dominant power generation technology in space, due to their unparalleled high efficiency, reliability in the space environment, and ability to be integrated into very lightweight panels. As remarkable as these attributes are, new types of space III-V solar cells are continually reaching new heights in performance. Commercially-available multijunction solar cells with 30% conversion efficiency under the AM0 space spectrum are just around the corner. Understanding of radiation resistance and thermal cycling reliability has reached levels never before attained, and is resulting in new standards of reliability. A flurry of research activity has resulted in very-thin, flexible, and extremely lightweight space solar cells and panels in several groups around the world, capable of being folded or rolled into a smaller stowage volume for launch than has been possible to date. This approach combines the very high efficiency and reliability of III-V multijunction cells with the thin, flexible PV blanket functionality normally associated only with thin-film polycrystalline or amorphous PV technology. This paper discusses the latest developments in III-V space solar cell technology, and explores opportunities for still higher performance in the future

High-efficiency multijunction photovoltaics for low-cost solar electricity

Multijunction solar cells divide the solar spectrum into smaller slices, delivering experimental efficiencies over 40%, and enabling theoretical efficiency over 60%. These high efficiency cells have a powerful effect on the cost effectiveness of new concentrator photovoltaic systems now being deployed around the world, making this technology one of the most viable options for plentiful solar-generated electricity.

Direct Semiconductor Bonding Technology (SBT) for high efficiency III-V multi-junction solar cells

In recent years, the concept of wafer bonding has attracted significant attention since this approach allows direct integration of lattice-mismatched hetero-structure devices grown on different substrates by eliminating the major limitations of lattice matching requirements. The wafer bonding approach is particularly attractive for III-V based device structures since elimination of the lattice matching constraints allows novel device designs with otherwise impossible band-gap combinations, such as in multi-junction photo-voltaic devices with subcell band gaps tailored for optimum absorption of the solar spectrum. Several other optoelectronic applications, such as photonic crystals, resonant cavity photo-detectors and surface emitting lasers, have also extensively investigated the wafer bonding approach [1]. For III-V based photo-voltaic devices in particular, which have continued to yield the highest conversion efficiency amongst all photo-voltaic technologies [2], the possibility of integration of devices grown lattice matched to GaAs and InP with optimum band-gap combinations provides a way to break the barrier posed by lattice matching constraints and achieve even higher conversion efficiencies. Recently, fabrication of a simple 2-junction solar cell has been reported by Tanabe et al [3] via direct bonding of GaAs and InP wafers.

Multijunction solar cells with subcell materials highly lattice-mismatched to germanium

The performance of a series of metamorphic GaInP and GaInAs solar cells grown on Ge with lattice-mismatch ranging from 0% to 2.4% is reported, with emphasis on device structures with 0.5% and 1.6% mismatch. Dual-junction cells with moderately lattice-mismatched (0.2% and 0.5%) structures have already reached electrical performance comparable to lattice-matched devices, at about 26% efficiency under AM0, 1-sun condition. Development efforts to date on highly lattice-mismatched (1.6% mismatch) structures have resulted in 22.6% efficiency dual-junction cells, with many improvements still possible. Spectral response measurements reveal excellent quantum efficiency (QE) for metamorphic GaInP and GaInAs materials, with a measured internal QE of over 90%. The offsets between the bandgap voltage (E/sub g//q) and the open-circuit voltage (V/sub OC/) of GaInP and GaInAs metamorphic cells were kept below 550 mV and 450 mV, respectively. Experimental results indicate that lattice-mismatched GalnP/GalnAs dual-junction cells can achieve higher energy conversion efficiency than lattice-matched GaInP/GaInAs dual-junction solar cells.