D. Capewell

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy

We have observed laser action at λ=3.06 μm in In0.77Ga0.23As0.74Sb0.26/InP0.7Sb0.3 double heterojunction, diode lasers, which were grown by organometallic vapor‐phase epitaxy. The maximum operating temperature was T=35 K, and typical threshold current densities were 200–330 A/cm2. At temperatures up to 35 K, the lasing wavelength decreased with increasing temperature owing to a band‐filling effect.

Multi-frequency laser monolithically integrating InGaAsP gain elements with amorphous silicon AWG

We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.

AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation

Calculation of the optical field distribution in 2 micrometer AlGaAsSb/InGaAsSb/GaSb multiple quantum well (MQW) lasers shows that incorporation of about 100 nm waveguide layers between quantum wells (QW) and cladding layers increases the optical confinement factor and reduces losses caused by mode penetration into doped cladding layers. Structures of this type have been grown by MBE. Both photoluminescence studies and measurements of laser diode parameters demonstrate that excess carriers confined in the waveguide are effectively collected and recombine in the QWs despite the small valence band offset at the interface of the QW and the waveguide, which is expected to be less than kT at 300 K.

Amorphous Silicon Waveguide Components for Monolithic Integration with InGaAsP Gain Sections

Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

High-performance surface-normal modulators based on stepped quantum wells

Surface-normal modulators based on stepped quantum wells at /spl lambda//spl sim/1.55 /spl mu/m are demonstrated. These devices have nearly two times better efficiency and 7 dB higher extinction ratio compared to devices with rectangular and coupled-quantum wells.

3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

We have observed laser action in InO7GaO3AsO72SbO28 IInPO.7SbO.3 double heterojunction, diode lasers at ? = 3.06 .tm. The maximum operating temperature was 35 K. The threshold current densities were in the range of 200 - 330 A /cm These devices were grown by organometallic vapor-phase epitaxy.