D. E. Jesson

Running droplets of gallium from evaporation of gallium arsenide.

High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface. Using real-time in situ surface electron microscopy, we found that these droplets spontaneously run across the crystal surface. Running droplets have been seen in many systems, but they typically require special surface preparation or gradient forces. In contrast, we show that noncongruent evaporation automatically provides a driving force for running droplets. The motion is predicted and observed to slow and stop near a characteristic temperature, with the speed increasing both below and above this temperature. The same behavior is expected to occur during the evaporation of similar III-V semiconductors such as indium arsenide.

Caustic imaging of gallium droplets using mirror electron microscopy

We discuss a new interpretation of mirror electron microscopy (MEM) images, whereby electric field distortions caused by surface topography and/or potential variations are sufficiently large to create caustics in the image contrast. Using a ray-based trajectory method, we consider how a family of rays overlaps to create caustics in the vicinity of the imaging plane of the magnetic objective lens. Such image caustics contain useful information on the surface topography and/or potential, and can be directly related to surface features. Specifically we show how a through-focus series of MEM images can be used to extract the contact angle of a Ga droplet on a GaAs (001) surface.

Laplacian image contrast in mirror electron microscopy

We discuss an intuitive approach to interpreting mirror electron microscopy (MEM) images, whereby image contrast is primarily caused by the Laplacian of small height or potential variations across a sample surface. This variation is blurred slightly to account for the interaction of the electrons with the electrical potential away from the surface. The method is derived from the established geometrical theory of MEM contrast, and whilst it loses quantitative accuracy outside its domain of validity, it retains a simplicity that enables rapid interpretation of MEM images. A strong parallel exists between this method and out of focus contrast in transmission electron microscopy (TEM), which allows a number of extensions to be made, such as including the effects of spherical and chromatic aberration.

Dynamics of mass transport during nanohole drilling by local droplet etching

Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing. This paper studies the droplet material removal experimentally and discusses the results in terms of a simple model. The first set of experiments demonstrates that the droplet material is removed by detachment of atoms and spreading over the substrate surface. Further experiments establish that droplet etching requires a small arsenic background pressure to inhibit re-attachment of the detached atoms. Surfaces processed under completely minimized As pressure show no hole formation but instead a conservation of the initial droplets. Under consideration of these results, a simple kinetic scaling model of the etching process is proposed that quantitatively reproduces experimental data on the hole depth as a function of the process temperature and deposited amount of droplet material. Furthermore, the depth dependence of the hole side-facet angle is analyzed.

Addendum. Laplacian image contrast in mirror electron microscopy

We extend the theory of Laplacian image contrast in mirror electron microscopy (MEM) to the case where the sample is illuminated by a parallel, collimated beam. This popular imaging geometry corresponds to a modern low energy electron microscope equipped with a magnetic objective lens. We show that within the constraints of the relevant approximations; the results for parallel illumination differ only negligibly from diverging MEM specimen illumination conditions.

Congruent evaporation temperature of GaAs(001) controlled by As flux

The congruent evaporation temperature Tc is a fundamental surface characteristic of GaAs and similar compounds. Above Tc the rate of As evaporation exceeds that of Ga during Langmuir (free) evaporation into a vacuum. However, during molecular beam epitaxy (MBE) there is generally an external As flux F incident on the surface. Here we show that this flux directly controls Tc. We introduce a sensitive approach to measure Tc based on Ga droplet stability, and determine the dependence of Tc on F. This dependence is explained by a simple model for evaporation in the presence of external flux. The capability of manipulating Tc via changing F offers a means of controlling congruent evaporation with relevance to MBE, surface preparation methods, and droplet epitaxy.

WAVE OPTICAL TREATMENT OF SURFACE STEP CONTRAST IN LOW-ENERGY ELECTRON MICROSCOPY

A wave optical treatment of surface step contrast in a low-energy electron microscopy (LEEM) is presented. The aberrations of an idealised LEEM imaging system are directly incorporated into a transfer function (TF) and image simulations of surface steps are evaluated in one and two dimensions. Under the special circumstances of a weak phase object, the simplified form of the contrast transfer function (CTF) is used to discuss LEEM image contrast and optimum defocus conditions.

New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition

We have systematically investigated the morphological evolution of Ge0.5Si0.5 strained films during postdeposition annealing. The changes of the surface structure are found to follow the kinetic route of strain relaxation at different stages. A number of interesting features are revealed, which include the existence of an energy barrier to the two‐dimensional/three‐dimensional (2D/3D) transition, and a self‐limiting effect in the growth kinetics of strained 3D islands. We demonstrate that the annealing approach provides a new way to grow coherent islands with uniform size.

Asymmetric coalescence of reactively wetting droplets

Coalescence of droplets during reactive wetting is investigated for the liquid Ga/GaAs(001) system. In situmirror electron microscopy reveals that coalescence predominantly involves the motion of one reactive droplet relative to the other. This behaviour differs significantly from coalescence in non-reactive systems and is associated with contact line pinning at a ridge/etch pit edge which is identified using atomic force microscopy and selective etching. A simple geometrical model is presented to describe the pinning.

Ga droplet surface dynamics during Langmuir evaporation of GaAs

We describe the design and application of a low-energy electron microscope (LEEM) dedicated to the study of III-V materials. Recent studies of Langmuir (free) evaporation of GaAs(001) have been reviewed. Running Ga droplets are observed, and the motion is predicted and shown to slow and stop near a characteristic temperature. Striking bursts of Bdaughter[ droplet nucleation accompany the coalescence of large Bparent[ droplets. These observations imply that evaporation and surface morphology are intimately connected, suggesting a new approach for the self-assembly and positioning of nanostructures on patterned surfaces.