D. Gatto Monticone

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy ( MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several µm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM), we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular, that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization at both

Beating the Abbe diffraction limit in confocal microscopy via nonclassical photon statistics.

We experimentally demonstrate quantum enhanced resolution in confocal fluorescence microscopy exploiting the nonclassical photon statistics of single nitrogen-vacancy color centers in diamond. By developing a general model of superresolution based on the direct sampling of the kth-order autocorrelation function of the photoluminescence signal, we show the possibility to resolve, in principle, arbitrarily close emitting centers.

Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e. laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e. laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasi-exponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.

Refractive index variation in a free-standing diamond thin film induced by irradiation with fully transmitted high-energy protons

Ion irradiation is a widely employed tool to fabricate diamond micro- and nano-structures for applications in integrated photonics and quantum optics. In this context, it is essential to accurately assess the effect of ion-induced damage on the variation of the refractive index of the material, both to control the side effects in the fabrication process and possibly finely tune such variations. Several partially contradictory accounts have been provided on the effect of the ion irradiation on the refractive index of single crystal diamond. These discrepancies may be attributable to the fact that in all cases the ions are implanted in the bulk of the material, thus inducing a series of concurrent effects (volume expansion, stress, doping, etc.). Here we report the systematic characterization of the refractive index variations occurring in a 38 µm thin artificial diamond sample upon irradiation with high-energy (3 MeV and 5 MeV) protons. In this configuration the ions are fully transmitted through the sample, while inducing an almost uniform damage profile with depth. Therefore, our findings conclusively identify and accurately quantify the change in the material polarizability as a function of ion beam damage as the primary cause for the modification of its refractive index.

Beating the diffraction limit with single-photons

We experimentally demonstrate quantum enhanced resolution in confocal fluorescence microscopy exploiting the non-classical photon statistics of single nitrogen-vacancy colour centres in diamond.

Recent progresses in quantum imaging real applications

We present two recent results achieved in INRIM laboratories paving the way for next future commercial use of quantum imaging techniques. The first exploits non-classical photon statistics of single nitrogen-vacancy color centers in diamond for realising super-resolution. A little more in detail we demonstrate that the measurement of high order correlation functions allows overcoming Abbe limit. The second exploits ghost imaging in a specific case of practical interest, i.e. in measuring magnetic structures in garnets.

High performing SPS based on native NIR-emitting single colour centers in diamond

Single-photon sources (SPS) play a key-role in many applications, spanning from quantum metrology, to quantum information and to the foundations of quantum mechanics. Even if an ideal SPS (i. e. emitting indistinguishable, ”on-demand” single photons, at an arbitrarily fast repetition rate) is far to be realized due to real-world deviations from the ideality, much effort is currently devoted to improving the performance of real sources. With regards to the emission probability, it appears natural to employ sources that are in principle deterministic in the single- photon emission (single quantum emitters such as single atoms, ions, molecules, quantum dots, or color centers in diamond) as opposed to probabilistic ones (usually heralded SPS based on parametric down-conversion). We present an overview of our latest results concerning a work-in-progress NIR pulsed single photon source based on single quantum emitters (color centers in diamond) exploiting recently reported centers. They are particularly interesting because of the narrow emission line (tipically less than 5 nm), the shorter excited state lifetime with respect to NV centres (1 - 2 ns compared to 12 ns, allowing a ten-fold photon emission rate upon saturation) and the polarized emission.