D. J. Salunkhe
University of Solapur
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Publication
Featured researches published by D. J. Salunkhe.
Journal of Materials Science: Materials in Electronics | 2012
A. N. Tarale; S. R. Jigajeni; D. J. Salunkhe; P. B. Joshi; S. B. Kulkarni; D. M. Phase; R. J. Chaudhary; S. K. Deshapande
The paper presents synthesis of Ba0.7Sr0.3TiO3 (BST), Ba0.7Sr0.3TiO3 (BZT) thin films and BZT/BST heterostructures using modified Pechini method. The La0.7Sr0.3MnO3 has been used as a conducting bottom layer to form metal ferroelectric metal capacitor. The thin films are spin coated on SiO2/n-Si (100) substrates. The thin films thus deposited are characterized for crystal structure, morphology, dielectric and complex impedance properties. The results show that BZT/BST heterostructures show reduced loss tangent tan δ and useful value of figure of merit γ in RF range of frequencies. The results on dielectric properties could be analyzed in terms of the Maxwell–Wagner Model and contribution due to superlattice effects.
Journal of Materials Science: Materials in Electronics | 2013
A. N. Tarale; M. M. Sutar; D. J. Salunkhe; P. B. Joshi; S. B. Kulkarni; Rajendra C. Pawar; Caroline Sunyong Lee; D. M. Phase; M. Gupta; R. J. Chaudhary
The paper presents synthesis of Ba0.7Sr0.3TiO3 (BST), BaZr0.3Ti0.7O3 (BZT) and SrTiO3 (ST) thin films and their heterostructures using modified Pechini method. The La0.7Sr0.3MnO3 has been used as a conducting bottom layer to form metal ferroelectric metal capacitor. The thin films are spin coated on SiO2/n-Si(100) substrates. The thin films thus deposited are characterized for crystal structure, morphology, dielectric, complex impedance and admittance properties. Deposition of surface layer ST is observed to reduce loss tangent tan δ of BST and BZT thin films, still maintaining equivalent magnitude of figure of merit γ. The results on dielectric properties are analyzed in terms of the Maxwell–Wagner model and Koop’s phenomenological theory.
Journal of Materials Science: Materials in Electronics | 2016
S. G. Dhumal; A. N. Tarale; P. B. Joshi; D. J. Salunkhe
Abstract Synthesis of Ni doped Ba0.95Sr0.05TiO3 (BST) was carryout by solid state reaction method. The influence of doping amount of Ni on BST was investigated. The XRD confirmed the single phase crystalline structure. Scanning electron microscopy image was also employed to observe surface morphology. The dielectric constant and dielectric loss of BST0.05 are obviously influenced by nickel addition content. The Curie temperature Tc decreases with increasing nickel doping content. The studies on P–E and M–H hysteresis loops are carried out to confirm simultaneous presence of both the ferroelectric and ferromagnetic orders in a Ni doped BST.
Ceramics International | 2013
A. N. Tarale; D. J. Salunkhe; P. B. Joshi; Shrinivas B. Kulkarni
Journal of Materials Science: Materials in Electronics | 2016
P. M. Kharade; S. M. Mane; S. B. Kulkarni; P. B. Joshi; D. J. Salunkhe
Journal of Materials Science: Materials in Electronics | 2016
S. H. Kshirsagar; A. N. Tarale; D. J. Salunkhe; S. B. Kulkarni; P. B. Joshi
Journal of Materials Science: Materials in Electronics | 2016
S. M. Mane; P. M. Tirmali; D. J. Salunkhe; P. B. Joshi; C. B. Kolekar; S. B. Kulkarni
Applied Nanoscience | 2012
A. N. Tarale; D. J. Salunkhe; S. B. Kulkarni; P. B. Joshi
Journal of Materials Science: Materials in Electronics | 2017
P. M. Kharade; J. V. Thombare; S. L. Kadam; S. B. Kulkarni; D. J. Salunkhe
Journal of Electronic Materials | 2015
S. H. Kshirsagar; A. N. Tarale; D. J. Salunkhe; S. B. Kulkarni; P. B. Joshi