D. K. Sengupta

10–16 μm Broadband quantum well infrared photodetector

A very long wavelength broadband infrared detector, sensitive over a 10–16 μm spectral range, based on GaAs/AlxGa1−xAs quantum wells grown by molecular beam epitaxy, has been demonstrated. Wavelength broadening of Δλ/λp∼42% is observed to be about a 400% increase compared to a typical bound-to-quasibound quantum well infrared photodetector (QWIP). In this device structure, which is different from typical QWIP device structures, two different gain mechanisms associated with photocurrent electrons and dark current electrons were observed and explained. Even with broader response, D*∼1×1010 cmHz/W at T=55 K is comparable to regular QWIPs with similar cutoff wavelengths.

Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering

The partial intermixing of the well and barrier materials offers unique opportunities to shift locally the bandgap of quantum-well (QW) structures. We have demonstrated redshifting and broadening of the wavelength responses of bound-to-continuum GaAs and InP based quantum-well infrared photodetectors (QWIPs) after growth via impurity-free vacancy disordering (IFVD). A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and multiple-quantum-well (MQW) structures. Compared to the as-grown detector, the peak spectral responses of the disordered detectors were shifted to longer wavelengths. The peak absolute response of the disordered GaAs based QWIP is lower by almost a factor of four. However, the responsivity characteristics of the disordered InP based QWIP show no major degradation. In general, with the spectral broadening taken into account, the overall performance of the disordered QWIPs has not dropped significantly. Thus, the postgrowth control of the QW composition profiles by impurity-free vacancy disordering offers unique opportunities to fine tune various aspects of a photodetectors response. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.

p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

Lattice‐matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p‐type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n‐type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.

Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8–12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP’s response.

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

Efficient electromagnetic analysis of two-dimensional finite quasi-random gratings for quantum well infrared photodetectors

In this work, a recently developed full-wave electromagnetic analysis technique is applied to the simulation of two-dimensional finite quasi-random gratings for quantum well infrared photodetectors. This steepest descent fast multipole method is a mathematically rigorous technique that permits the rapid and accurate solution of the electric field integral equation governing scattering from a quasi-planar structure. In the present application, it enables the efficient and accurate simulation of scattering by finite two-dimensional grating structures interfacing with GaAs. Grating absorption is predicted by evaluating the scattered optical electric field component at the device layer along the growth direction. Numerical examples illustrating the functional dependence of the absorption on grating parameters and wavelength are discussed. The simulation approach presented here should prove to be a useful tool for the a priori design of novel aperiodic, quasi-random and rough surface two-dimensional gratings f...

Two-dimensional rough surface couplers for broadband quantum-well infrared photodetectors

Rough surfaces are proposed as a class of couplers for achieving high absorption in broadband quantum-well infrared photodetectors (QWIPs). The performance of these structures is predicted numerically using the steepest-descent fast-multipole method, a recently developed fast electromagnetic analysis technique. This method permits the efficient and accurate solution of the electric-field integral equation governing scattering from a quasiplanar structure. The scattered optical electric-field component along the growth direction at the device layer can be used to predict the QWIP absorption. It is demonstrated that rough-surface couplers exhibit very high absorption sustained over large spectral ranges, in contrast to quasirandom or periodic gratings that are characterized by tradeoffs between peak absorption and spectral range. It is expected that the excellent spectral absorption characteristics of rough-surface couplers will make them particularly suitable for broadband QWIP applications.

Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing

Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple‐quantum‐well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out‐diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the interdiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4‐encapsulated QWIPs red shifted by 1 μm

Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.

Intermixed quantum well photodetectors for long-wavelength detection

Intermixing of the well and barrier layers in quantum well infrared photodetectors (QWIPs) can be used to realize a broadened spectral response as well as multiple color detectors. We describe die experimental results of both rapid thermal annealing (RTA) and laser annealing (LA) QWIPs operating in the 8-12µm regime. The peak spectral response of the annealed detectors was shifted to longer wavelength as compared to die as-grown detectors. In general, a decrease in detector performance after annealing is also observed which may be attributable to a change in the absorption coefficient caused by the out-diffiision of dopants during annealing. Recent advances in growth technology, complimented by innovative structures should offset any degredation in performance. Thus, the post-growth control of the composition profiles by annealing offers opportunities to fine tune various aspects of a QWIP’s response.