D. Kamburov

Composite fermions with tunable Fermi contour anisotropy.

The composite fermion formalism elegantly describes some of the most fascinating behaviors of interacting two-dimensional carriers at low temperatures and in strong perpendicular magnetic fields. In this framework, carriers minimize their energy by attaching two flux quanta and forming new quasiparticles, the so-called composite fermions. Thanks to the flux attachment, when a Landau level is half-filled, the composite fermions feel a vanishing effective magnetic field and possess a Fermi surface with a well-defined Fermi contour. Our measurements in a high-quality two-dimensional hole system confined to a GaAs quantum well demonstrate that a parallel magnetic field can significantly distort the hole-flux composite fermion Fermi contour.

Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing

The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb interaction. It occurs when the filling factor (

Fractional quantum Hall effect and Wigner crystal of interacting composite fermions.

\nu

Commensurability oscillations of hole-flux composite fermions.

) of the quantized Landau levels (LLs) is a fraction which, with very few exceptions, has an odd denominator. In 2D systems with additional degrees of freedom it is possible to cause a crossing of the LLs at the Fermi level. At and near these crossings, the FQHE states are often weakened or destroyed. Here we report the observation of an unusual crossing of the two \emph{lowest-energy} LLs in high-mobility GaAs 2D

Composite Fermions with a Warped Fermi Contour

hole

Interplay between Quantum Well Width and Interface Roughness for Electron Transport Mobility in GaAs Quantum Wells

systems which brings to life a new \emph{even-denominator} FQHE at

Design rules for modulation doped AlAs quantum wells

\nu=1/2

Evolution of the 7 / 2 Fractional Quantum Hall State in Two-Subband Systems

.

Anisotropic composite fermions and fractional quantum Hall effect

In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in a magnetic field or increasing density, we observe multiple spin-polarization transitions of the fractional quantum Hall states at filling factors ν=4/5 and 5/7. The number of observed transitions provides evidence that these are fractional quantum Hall states of interacting two-flux composite fermions. Moreover, the fact that the reentrant integer quantum Hall effect near ν=4/5 always develops following the transition to full spin polarization of the ν=4/5 fractional quantum Hall state links the reentrant phase to a pinned ferromagnetic Wigner crystal of composite fermions.

Spin and charge distribution symmetry dependence of stripe phases in two-dimensional electron systems confined to wide quantum wells

We report the observation of commensurability oscillations of hole-flux composite fermions near filling factor ν = 1/2 in a high-mobility two-dimensional hole system confined to a GaAs quantum well, and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The oscillations, which are consistent with ballistic transport of fully spin-polarized composite fermions in a weak periodic effective magnetic field, are surprisingly strong and exhibit up to third-order minima. We extract a ballistic mean-free-path of about 0.2 μm for the hole-flux composite fermions.