D. Quirion

Radiation effects in Low Gain Avalanche Detectors after hadron irradiations

Novel silicon detectors with charge gain were designed (Low Gain Avalanche Detectors - LGAD) to be used in particle physics experiments, medical and timing applications. They are based on a n++-p+-p structure where appropriate doping of multiplication layer (p^+) is needed to achieve high fields and impact ionization. Several wafers were processed with different junction parameters resulting in gains of up to 16 at high voltages. In order to study radiation hardness of LGAD, which is one of key requirements for future high energy experiments, several sets of diodes were irradiated with reactor neutrons, 192 MeV pions and 800 MeV protons to the equivalent fluences of up to Φeq=1016 cm−2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. It was found that the gain decreases with irradiation, which was attributed to effective acceptor removal in the multiplication layer. Other important aspects of operation of irradiated detectors such as leakage current and noise in the presence of charge multiplication were also investigated.

Ultra-thin 3D silicon sensors for neutron detection

We present a novel neutron detector based on an ultra-thin 3D silicon sensor with a sensitive volume only 10 μm thick. This ultra-thin active volume allows a high gamma-ray rejection, a key requirement in order to discriminate the signal coming from the neutrons in a mixed neutron-gamma ray environment. The device upper-side is covered with a novel boron-based compound that detects neutrons by means of the 10B(n,α)7Li nuclear reaction. The performance of test devices has been investigated first with a gamma-ray source to evaluate the gamma-ray rejection factor, and then with an 241AmBe neutron source to assess the neutron-gamma ray discrimination properties.

Geant4 and MCNPX simulations of thermal neutron detection with planar silicon detectors

We used Geant4 and MCNPX codes to evaluate the detection efficiency of planar silicon detectors coupled to different Boron-based converters with varied compositions and thicknesses that detect thermal neutrons via the 10B(n,α)7Li nuclear reaction. Few studies about the thermal neutron transport in Geant4 have been reported so far and it is becoming increasingly difficult to ignore its discrepancies with MCNPX in this neutron energy range. In the thermal energy range, Geant4 shows high discrepancies with MCNPX giving a maximum efficiency of about 3.3% in the 10B case whereas that obtained with MCNPX was 5%. Disagreements obtained between both codes in this energy range are analyzed and discussed.

3D silicon pixel detectors for the High-Luminosity LHC

3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are based on 50 × 250 μm2 large pixels connected to the FE-I4 readout chip. Detectors of this generation were irradiated to HL-LHC fluences and demonstrated excellent radiation hardness with operational voltages as low as 180 V and power dissipation of 12–15 mW/cm2 at a fluence of about 1016 neq/cm2, measured at -25°C. Moreover, to cope with the higher occupancies expected at the HL-LHC, a first run of a new generation of 3D detectors designed for the HL-LHC was produced at CNM with small pixel sizes of 50 × 50 and 25 × 100 μm2, matched to the FE-I4 chip. They demonstrated a good performance in the laboratory and in beam tests with hit efficiencies of about 97% at already 1–2 V before irradiation.

3D sensors for the HL-LHC

In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promising candidates for the innermost layers of the Pixel detector due to their excellent radiation hardness at low operation voltages and low power dissipation at moderate temperatures. Recent developments of 3D sensors for the HL-LHC are presented.

First investigation of a novel 2D position-sensitive semiconductor detector concept

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

First investigations of a silicon neutron detector with a carborane converter

We present a new design of a slow neutron detector, based on silicon detectors with innovative materials acting as conversion layers, plus preliminary results that will be the basis for a more complete study in the near future. The sensitive element of this detector is a Schottky barrier silicon diode covered with o-carborane, a novel boron-based converter material that detects neutrons by means of the 10B(n,?)7Li reaction. This sensor has been simulated with the MCNPX Monte-Carlo software in order to find the optimal converter layer thickness that maximizes the neutron detection efficiency. The simulated maximum efficiency is 2.7% for a 20 ?m converter layer of the o-carborane fabricated with pure 10B and of 0.5% for the same compound but made with natural boron material. Moreover, the performance of test devices has been investigated by means of an 241AmBe neutron source and the results have been analyzed with the help of GEANT4 simulations.

U3Dthin — Ultra thin 3D silicon detector for plasma diagnostics at the ITER tokamak

An ultra thin silicon detector called U3DTHIN[1,2] has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube[3,4], and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal-to-background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 µm, to detect the lowest energetic ions to 20 µm for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented.

Module production of the one-arm AFP 3D pixel tracker

The ATLAS Forward Proton (AFP) detector is designed to identify events in which one or two protons emerge intact from the LHC collisions. AFP will consist of a tracking detector, to measure the momentum of the protons, and a time of flight system to reduce the background from multiple proton-proton interactions. Following an extensive qualification period, 3D silicon pixel sensors were selected for the AFP tracker. The sensors were produced at CNM (Barcelona) during 2014. The tracker module assembly and quality control was performed at IFAE during 2015. The assembly of the first AFP arm and the following installation in the LHC tunnel took place in February 2016. This paper reviews the fabrication process of the AFP tracker focusing on the pixel modules.

Design and fabrication of an optimum peripheral region for low gain avalanche detectors

Abstract Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.