D. T. D. Childs

Systematic Study of the Effects of Modulation p-Doping on 1.3-

The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T0; 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed.

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We present a 18 mW fiber-coupled single-mode superluminescent diode with 85 nm bandwidth for application in optical coherence tomography (OCT). First, we describe the effect of quantum dot (QD) growth temperature on optical spectrum and gain, highlighting the need for the optimization of epitaxy for broadband applications. Then, by incorporating this improved material into a multicontact device, we show how bandwidth and power can be controlled. We then go on to show how the spectral shape influences the autocorrelation function, which exhibits a coherence length of <;11 μm, and relative noise is found to be 10 dB lower than that of a thermal source. Finally, we apply the optimum device to OCT of in vivo skin and show the improvement that can be made with higher power, wider bandwidth, and lower noise, respectively.

Quantum-Dot Lasers

We present the results of an accelerated life test study of quantum dot lasers operating at 1310 nm. The devices were run at 1 and 2 kA/cm2 (∼10 and ∼70 times Ith, depending on facet coatings), at temperatures of 80 and 100 °C for 1350 h. Some devices, particularly those with higher current densities, showed significant drops in output power and increase in threshold current over this time. The devices were examined using electroluminescence, which shows nonradiative recombination centers in the active region of the device as dark spots. A clear correlation between the density of dark spots and degradation is observed. The defect structure responsible for the dark spots has been identified using conventional and high-resolution cross-section transmission electron microscopy of selected structures. The defects consist of an inverted stacking fault pyramid or microtwin enclosing the dot. The more extensive defects observed after the life test are consistent with their growth by climb, i.e., addition and/or ...

Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Device Engineering

We report a hybrid quantum well (QW)/quantum dot active element for an application in broadband sources. These structures consist of an InGaAs QW and six InAs dot-in-well (DWELL) layers. The single QW is designed to emit at a wavelength coincident with the second excited state of the quantum dot. We compare two hybrid QW/quantum dot samples where the QW position is changed, and show that carrier transport effects make QW placement very important through current-voltage, capacitance-voltage, photocurrent, and temperature-dependent spontaneous emission measurements. Using the optimal structure, due to the combined effects of quantum dot ground states, first excited state, and QW emission, a positive modal gain spanning ~300 nm is achieved for the segmented contact device. The values for modal gain are further confirmed by simultaneous three-state lasing, which is studied spectroscopically. Finally, a hybrid QW/quantum dot superluminescent diode (SLD) is reported; the device exhibits a 3 dB emission spectrum of 213 nm, centered at 1230 nm with a corresponding output power of 1.1 mW. The hybrid SLD is then assessed for an application in an optical coherence tomography system; an axial resolution of ~4 μm is predicted.

Structural analysis of life tested 1.3 μm quantum dot lasers

We present a high-power (18 mW continuous wave exiting a single-mode fiber and 35 mW exiting the facet), broadband (85 nm full-width at half-maximum) quantum dot-based superluminescent diode, and apply it to a time-domain optical coherence tomography (OCT) setup. First, we test its performance with increasing optical feedback. Then we demonstrate its imaging properties on tissue-engineered (TE) skin and in vivo skin. OCT allows the tracking of epidermal development in TE skin, while the higher power source allows better sensitivity and depth penetration for imaging of in vivo skin layers.

Hybrid Quantum Well/Quantum Dot Structure for Broad Spectral Bandwidth Emitters

The use of the excited state quantum dot lasers for high speed direct modulation is proposed and demonstrated. A direct comparison of lasers utilizing the ground state and excited state from the same laser material reveals a factor of two increase in the K-factor limited bandwidth. This is attributed to an increase in the saturated gain and reduced carrier scattering time of the excited state compared to the ground state.

Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Skin Imaging

We propose and demonstrate a hybrid quantum well/quantum dot structure to enhance the gain and spontaneous emission bandwidth of a quantum dot active region. A single quantum well is introduced into a multi-layer stack of quantum dots, spectrally positioned to cancel the losses due to the second excited state of the dots. As a result, the modal gain at room temperature is extended to 300 nm, covering the wavelength range of 1100-1400 nm, and spontaneous emission has a 250 nm, 3 dB linewidth from 1080-1335 nm, of interest to short-haul telecom and optical coherence tomography applications.

Direct modulation of excited state quantum dot lasers

This paper details the development of broadband sources at 1050 nm for optical coherence tomography applications. A method for obtaining a broad and smooth emission and gain spectrum for 1050 nm quantum dot (QD) layers is presented. The design, fabrication, and operating characteristics of multicontact superluminescent diodes are then set out, and the operating characteristics of this device, incorporating the broadband QD material, are described. It is shown that this device allows the tuning of the emission spectrum peak position, peak shape, emission bandwidth, and power, which are advantageous for imaging applications. A simplified device, utilizing a single current source, is achieved by incorporating a resistor network. The operation of the multicontact device under various drive topologies is discussed.

Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure

The authors report the creation of low reflectivity angled facets by focused-ion-beam postfabrication etching. A method to directly measure the effective facet reflectivity of such facets, utilizing gain saturation effects in the quantum dots is described. The reflectivities of the angled facets are shown to decrease by increasing the facet angle from 0° to 15°. With a reflectivity of <1×10−6 obtained for a facet with a 15° angle, allowing quantum dot superluminescent light-emitting diodes to be fabricated. The use of different angled facets to control the emission wavelength of both quantum dot lasers and superluminescent light-emitting diodes is outlined.

Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots

A GaAs-based epitaxially regrown photonic crystal surface-emitting laser is proposed and demonstrated at room temperature. The photonic crystal band-structure is mapped through the angular dependence of subthreshold electroluminescence, allowing the photonic crystal coupling coefficients to be determined.