D.V. Sridhara Rao

Equilibrium critical thickness for misfit dislocations in III-nitrides

The critical thickness gives the transition point between fully strained and relaxed heteroepitaxial films and determines the onset of defect generation, including misfit dislocations, cracks, and V-pits. An important variable in critical thickness calculations concerning misfit dislocations is the dislocation energy. It consists of two contributions: the elastic energy of the bulk material around a dislocation and the energy of the dislocation core. The latter part is often neglected. Recent atomistic calculations have estimated this quantity together with the radius of dislocation cores in wurtzite III-nitrides. The effect of the dislocation core energy on equilibrium critical thickness values for III-nitrides is investigated theoretically and is shown to be significant. The calculated values of the critical thickness are compared with experimentally determined values of the critical thickness for misfit dislocations in the InGaN/GaN system using transmission electron microscopy and x-ray diffraction te...

Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates

In this paper we report on the optical properties of a series of GaN/AlGaN multiple quantum well structures grown on a-plane (112¯0) GaN, which had been deposited on r-plane (11¯02) sapphire substrates, compared to a reference GaN template of the same orientation. The low temperature photoluminescence spectrum of the template layer is dominated by two emission bands, which we attribute to recombination involving excitons in the bulk of the layer and electrons and holes trapped at basal-plane stacking faults, designated X1 and X2, respectively. The photoluminescence spectra from the quantum well structures show similar emission bands except that both X1 and X2 shift to higher energy with decreasing quantum well thickness. The shift to higher energy is due to the effects of quantum confinement on carriers trapped at the stacking faults that intersect the quantum wells, as well as those excitons that are localized within the quantum wells. This assignment is based partly on excitation spectroscopy that revea...

Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates

A series of nonpolar a-plane GaN/AlGaN multiple quantum well structures of varying quantum well width have been studied by polarization resolved photoluminescence and photoluminescence excitation spectroscopy at low temperature. The photoluminescence spectra from all the structures show two features that are observed to blueshift with reducing well width. The lower energy feature is associated with the recombination of carriers in regions of the wells intersected by basal-plane stacking faults, while the higher energy line is attributed to localized exciton recombination involving only the quantum wells. Using excitation spectroscopy with polarized light, we were able to resolve exciton features associated with both the |Y〉 and |Z〉 valence sub-bands. The observed polarization dependence of the transitions is consistent with a modification to the valence band-edge states due to anisotropic biaxial compressive strain in the quantum well. We were also able to determine the exciton binding energies directly from the photoluminescence excitation spectra, which were found to increase from 36 to 76 meV as the quantum well width reduced from 60 to 35 A.

Lattice distortions in GaN on sapphire using the CBED–HOLZ technique

The convergent beam electron diffraction (CBED) methodology was developed to investigate the lattice distortions in wurtzite gallium nitride (GaN) from a single zone-axis pattern. The methodology enabled quantitative measurements of lattice distortions (alpha, beta, gamma and c) in transmission electron microscope (TEM) specimens of a GaN film grown on (0,0,0,1) sapphire by metal-organic vapour-phase epitaxy. The CBED patterns were obtained at different distances from the GaN/sapphire interface. The results show that GaN is triclinic above the interface with an increased lattice parameter c. At 0.85 microm from the interface, alpha=90 degrees , beta=8905 degrees and gamma=11966 degrees . The GaN lattice relaxes steadily back to hexagonal further away from the sapphire substrate. The GaN distortions are mainly confined to the initial stages of growth involving the growth and the coalescence of 3D GaN islands.

Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography

We have studied basal-plane stacking faults in a non-polar (11-20) GaN epilayer using high-resolution electron microscopy and off-axis electron holography. The microstructure of the basal-plane stacking faults (BSFs) has been determined to be I1 type from high-resolution TEM images. High-resolution holograms along the [11-20] zone axis were obtained by off-axis electron holography on a Cs-corrected TEM, providing ~2 A spatial resolution in the reconstructed amplitude and phase images. Phase fluctuations across the stacking faults were detected, suggesting the presence of a built-in electric field. The uncertainties in the experiments and their interpretation are discussed.

Lattice distortions in GaN thin films on (0001) sapphire

The GaN/sapphire microstructure and lattice distortions in GaN were investigated using convergent beam electron diffraction (CBED) and electron backscatter diffraction (EBSD). CBED studies showed small scale (<1°) triclinic strain in the electron microscope specimens with a tetragonal expansion (~0.001 nm) of the lattice along the GaN growth direction, which has been observed in continuous films as well as isolated or partly coalesced islands. The strains extend up to ~ 2 μm from the GaN/sapphire interface. EBSD studies show a clear mosaic structure. The largest component of the mosaic structure corresponds to a twist around the [0001] axis, perpendicular to the interface.

HANSIS software tool for the automated analysis of HOLZ lines.

A software tool, named as HANSIS (HOLZ analysis), has been developed for the automated analysis of higher-order Laue zone (HOLZ) lines in convergent beam electron diffraction (CBED) patterns. With this tool, the angles and distances between the HOLZ intersections can be measured and the data can be presented graphically with a user-friendly interface. It is capable of simultaneous analysis of several HOLZ patterns and thus provides a tool for systematic studies of CBED patterns.