D. W. Stokes

Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K

Mid-infrared (λ=3.25 μm) broadened-waveguide diode lasers with active regions consisting of 5 type-II “W” quantum wells operated in continuous-wave (cw) mode up to 195 K. At 78 K, the threshold current density was 63 A/cm2, and up to 140 mW of cw output power was generated. A second structure with ten quantum wells operated up to 310 K in pulsed mode.

High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking

Optically pumped type-II W lasers emitting in the mid-infrared exhibited continuous-wave (cw) operating temperatures of 290 K at λ=3.0 μm and 210 K at λ=6.1 μm. Maximum cw output powers for 78 K were 260 mW at λ=3.1 μm and nearly 50 mW at λ=5.4 μm. These high maximum temperatures were achieved through the use of a diamond-pressure-bonding technique for heat sinking the semiconductor lasers. The thermal bond, which is accomplished through pressure alone, permits topside optical pumping through the diamond at wavelengths that would be absorbed by the substrate.

High-efficiency midinfrared “W” laser with optical pumping injection cavity

We describe an optical pumping injection cavity (OPIC) edge-emitting laser which employs GaSb/AlAsSb distributed Bragg reflectors above and below the type-II “W” active region to form an etalon for the pump beam. A pulsed W–OPIC laser emitting at 3.1–3.4 μm displays an incident threshold pump intensity of only 8 kW/cm2 at 300 K, and incident power conversion efficiencies per facet of 9% at 77 K and 4% at 275 K.

Growth of short-period InAs∕GaSb superlattices

The purpose of this work is to explore materials for midinfrared detectors that can operate at room temperature. Shorter-period InAs∕GaSb superlattices (SLs) have larger intervalance band separations, which are beneficial for reducing Auger recombination and tunneling current, thus making room temperature operation possible. To test these possibilities, several short-period SLs ranging from 50to11A were grown and their morphological properties were carefully monitored by transmission electron microscopy. The effect of structural degradation caused by the period reduction on the optical properties was studied using low-temperature photoluminescence (PL). The samples with larger periods (50–32A) showed excellent structural qualities and produced narrow full width at half maximum (FWHM) of the PL peak (5meV). As the period approached 24A, slight layer thickness undulations within the SLs were observed and these undulations intensified as the period further reduced to 17A. These structural degradations strong...

Type-II quantum-well “W” lasers emitting at λ=5.4–7.3 μm

A series of optically pumped type-II quantum-well “W” lasers with wavelengths ranging from 5.4 to 7.3 μm operated at temperatures up to at least 220 K for pulsed operation. The peak output power at 80 K was 1.1 W/facet for a device emitting at λ=7.0 μm. Internal losses were characterized for the temperature range between 40 and 190 K. Auger coefficients determined from an analysis of the threshold pump intensities were found to be suppressed by up to an order of magnitude compared to type-I III–V semiconductors with the same energy gaps.

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-ray Diffraction Study

We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.

Lateral composition modulation in InAs'GaSb superlattices

We report the analysis of lateral composition modulation in (InAs)m/(GaSb)m superlattices by x-ray diffraction. Vertical and lateral satellite peaks for a 140 period structure were observed. The lateral modulation wavelength, average superlattice composition, and vertical superlattice wavelength were determined. The lateral modulation was observed only along one in-plane direction resulting in quantum wire-like structures along the [110] direction. The unconventional structure of the lateral composition modulation, in which the stacking of the layers leads to a doubling of the vertical superlattice period, is discussed.We report the analysis of lateral composition modulation in (InAs)m/(GaSb)m superlattices by x-ray diffraction. Vertical and lateral satellite peaks for a 140 period structure were observed. The lateral modulation wavelength, average superlattice composition, and vertical superlattice wavelength were determined. The lateral modulation was observed only along one in-plane direction resulting in quantum wire-like structures along the [110] direction. The unconventional structure of the lateral composition modulation, in which the stacking of the layers leads to a doubling of the vertical superlattice period, is discussed.

Mid-infrared W quantum-well lasers for noncryogenic continuous-wave operation

We review the recent progress of electrically injected and optically pumped mid-IR lasers based on antimonide quantum wells with the type II W configuration. W quantum-well diodes have achieved cw operation up to 195 K at lambda = 3.25 mum. Optically pumped devices that employ the diamond pressure bond heat sink have reached 290 K at 3 mum and 210 K at 6 mum. Pulsed power conversion efficiencies of up to 7% at 220 K have been attained by use of an optical pumping injection cavity approach, in which an etalon cavity for the pump beam significantly enhances its absorptance. The angled-grating distributed-feedback configuration has been used to obtain near-diffraction-limited output for an optical pumping stripe width of 50 mum.

Type-II antimonide quantum wells for mid-infrared lasers

Abstract This paper discusses some of the key MBE growth issues for type-II Sb-based lasers, and present a summary of our recent progress towards the realization of high-power, high-beam-quality, mid-infrared (IR) lasers based on the “W” configuration of the active region. An optical pumping injection cavity (OPIC) approach has been adopted to improve the external power conversion efficiency. In addition, the first mid-IR angled-grating distributed feedback (α-DFB) lasers producing near-diffraction-limited output is discussed.

The influence of parents on undergraduate and graduate students’ entering the STEM disciplines and STEM careers

ABSTRACT This research examines the influence of parents on students’ studying the STEM disciplines and entering STEM careers. Cases of two graduate students (one female, one male) and one undergraduate student (male) are featured. The first two students in the convenience sample are biology and physics majors in a STEM teacher education programme; the third is enrolled in computer science. The narrative inquiry research method is used to elucidate the students’ academic trajectories. Incidents of circumstantial and planned parent curriculum making surfaced when the data was serially interpreted. Other themes included: (1) relationships between (student) learners and (teacher) parents, (2) invitations to inquiry, (3) modes of inquiry, (4) the improbability of certainty, and (5) changed narratives = changed lives. While policy briefs provide sweeping statements about parents’ positive effects on their children, narrative inquiries such as this one illuminate parents’ inquiry moves within home environments. These actions became retrospectively revealed in their adult children’s lived narratives. Nurtured by their mothers and/or fathers, students enter STEM disciplines and STEM-related careers through multiple pathways in addition to the anticipated pipeline.