Dae-Yong Son

Highly Reproducible Perovskite Solar Cells with Average Efficiency of 18.3% and Best Efficiency of 19.7% Fabricated via Lewis Base Adduct of Lead(II) Iodide

High efficiency perovskite solar cells were fabricated reproducibly via Lewis base adduct of lead(II) iodide. PbI2 was dissolved in N,N-dimethyformamide with equimolar N,N-dimethyl sulfoxide (DMSO) and CH3NH3I. Stretching vibration of S═O appeared at 1045 cm(-1) for bare DMSO, which was shifted to 1020 and 1015 cm(-1) upon reacting DMSO with PbI2 and PbI2 + CH3NH3I, respectively, indicative of forming the adduct of PbI2·DMSO and CH3NH3I·PbI2·DMSO due to interaction between Lewis base DMSO and/or iodide (I(-)) and Lewis acid PbI2. Spin-coating of a DMF solution containing PbI2, CH3NH3I, and DMSO (1:1:1 mol %) formed a transparent adduct film, which was converted to a dark brown film upon heating at low temperature of 65 °C for 1 min due to removal of the volatile DMSO from the adduct. The adduct-induced CH3NH3PbI3 exhibited high charge extraction characteristics with hole mobility as high as 3.9 × 10(-3) cm(2)/(V s) and slow recombination rate. Average power conversion efficiency (PCE) of 18.3% was achieved from 41 cells and the best PCE of 19.7% was attained via adduct approach.

Quantum-Dot-Sensitized Solar Cell with Unprecedentedly High Photocurrent

The reported photocurrent density (JSC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high JSC of 30 mA/cm2. By Hg2+ doping into PbS, JSC is almost doubled with improved stability. Femtosecond transient study confirms that the improved JSC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high JSC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

Printable organometallic perovskite enables large-area, low-dose X-ray imaging

Medical X-ray imaging procedures require digital flat detectors operating at low doses to reduce radiation health risks. Solution-processed organic–inorganic hybrid perovskites have characteristics that make them good candidates for the photoconductive layer of such sensitive detectors. However, such detectors have not yet been built on thin-film transistor arrays because it has been difficult to prepare thick perovskite films (more than a few hundred micrometres) over large areas (a detector is typically 50 centimetres by 50 centimetres). We report here an all-solution-based (in contrast to conventional vacuum processing) synthetic route to producing printable polycrystalline perovskites with sharply faceted large grains having morphologies and optoelectronic properties comparable to those of single crystals. High sensitivities of up to 11 microcoulombs per air KERMA of milligray per square centimetre (μC mGyair−1 cm−2) are achieved under irradiation with a 100-kilovolt bremsstrahlung source, which are at least one order of magnitude higher than the sensitivities achieved with currently used amorphous selenium or thallium-doped cesium iodide detectors. We demonstrate X-ray imaging in a conventional thin-film transistor substrate by embedding an 830-micrometre-thick perovskite film and an additional two interlayers of polymer/perovskite composites to provide conformal interfaces between perovskite films and electrodes that control dark currents and temporal charge carrier transportation. Such an all-solution-based perovskite detector could enable low-dose X-ray imaging, and could also be used in photoconductive devices for radiation imaging, sensing and energy harvesting.

Hierarchical SnO2 Nanoparticle-ZnO Nanorod Photoanode for Improving Transport and Life Time of Photoinjected Electrons in Dye-Sensitized Solar Cell

A hierarchical photoanode comprising a SnO(2) nanoparticle underlayer and a ZnO nanorod overlayer was prepared and its photovoltaic performance was compared to photoanodes consisting of SnO(2) nanoparticle only and ZnO nanorod only. The photoanode layer thickness was adjusted to about 7.6 μm to eliminate thickness effect. Ruthenium complex, coded N719, was used as a sensitizer. The photoanode composed of ZnO nanorod only showed a power conversion efficiency (PCE) as low as 0.54% with a short-circuit photocurrent density (J(SC)) of 2.04 mA/cm(2) and an open-circuit voltage (V(OC)) of 500 mV. The photoanode with SnO(2) nanoparticle only exhibited higher PCE (1.24%) because of higher J(SC) (6.64 mA/cm(2)), whereas V(OC) (340 mV) was lower than ZnO nanorod. Compared to SnO(2) nanoparticle and ZnO nanorod films, the bilayer structured film demonstrated much higher PCE (2.62%) because of both higher J(SC) (7.35 mA/cm(2)) and V(OC) (660 mV). Introduction of ZnO nanorod on the SnO(2) nanoparticle layer improved significantly electron transport and lifetime compared to the SnO(2) only film. One Order of magnitude slower charge recombination rate for the bilayer film than for the SnO(2) film was mainly responsible for the improved efficiency.

Observation of Enhanced Hole Extraction in Br Concentration Gradient Perovskite Materials

Enhancing hole extraction inside the perovskite layer is the key factor for boosting photovoltaic performance. Realization of halide concentration gradient perovskite materials has been expected to exhibit rapid hole extraction due to the precise bandgap tuning. Moreover, a formation of Br-rich region on the tri-iodide perovskite layer is expected to enhance moisture stability without a loss of current density. However, conventional synthetic techniques of perovskite materials such as the solution process have not achieved the realization of halide concentration gradient perovskite materials. In this report, we demonstrate the fabrication of Br concentration gradient mixed halide perovskite materials using a novel and facile halide conversion method based on vaporized hydrobromic acid. Accelerated hole extraction and enhanced lifetime due to Br gradient was verified by observing photoluminescence properties. Through the combination of secondary ion mass spectroscopy and transmission electron microscopy with energy-dispersive X-ray spectroscopy analysis, the diffusion behavior of Br ions in perovskite materials was investigated. The Br-gradient was found to be eventually converted into a homogeneous mixed halide layer after undergoing an intermixing process. Br-substituted perovskite solar cells exhibited a power conversion efficiency of 18.94% due to an increase in open circuit voltage from 1.08 to 1.11 V and an advance in fill-factor from 0.71 to 0.74. Long-term stability was also dramatically enhanced after the conversion process, i.e., the power conversion efficiency of the post-treated device has remained over 97% of the initial value under high humid conditions (40-90%) without any encapsulation for 4 weeks.

Universal Approach toward Hysteresis-Free Perovskite Solar Cell via Defect Engineering

Organic-inorganic halide perovskite is believed to be a potential candidate for high efficiency solar cells because power conversion efficiency (PCE) was certified to be more than 22%. Nevertheless, mismatch of PCE due to current density (J)-voltage (V) hysteresis in perovskite solar cells is an obstacle to overcome. There has been much lively debate on the origin of J-V hysteresis; however, effective methodology to solve the hysteric problem has not been developed. Here we report a universal approach for hysteresis-free perovskite solar cells via defect engineering. A severe hysteresis observed from the normal mesoscopic structure employing TiO2 and spiro-MeOTAD is almost removed or does not exist upon doping the pure perovskites, CH3NH3PbI3 and HC(NH2)2PbI3, and the mixed cation/anion perovskites, FA0.85MA0.15PbI2.55Br0.45 and FA0.85MA0.1Cs0.05PbI2.7Br0.3, with potassium iodide. Substantial reductions in low-frequency capacitance and bulk trap density are measured from the KI-doped perovskite, which is indicative of trap-hysteresis correlation. A series of experiments with alkali metal iodides of LiI, NaI, KI, RbI and CsI reveals that potassium ion is the right element for hysteresis-free perovskite. Theoretical studies suggest that the atomistic origin of the hysteresis of perovskite solar cells is not the migration of iodide vacancy but results from the formation of iodide Frenkel defect. Potassium ion is able to prevent the formation of Frenkel defect since K+ energetically prefers the interstitial site. A complete removal of hysteresis is more pronounced at mixed perovskite system as compared to pure perovskites, which is explained by lower formation energy of K interstitial (-0.65 V for CH3NH3PbI3 vs -1.17 V for mixed perovskite). The developed KI doping methodology is universally adapted for hysteresis-free perovskite regardless of perovskite composition and device structure.

Si/Ti2O3/Reduced Graphene Oxide Nanocomposite Anodes for Lithium-Ion Batteries with Highly Enhanced Cyclic Stability

Silicon (Si) has attracted tremendous attention as a high-capacity anode material for next generation Li-ion batteries (LIBs); unfortunately, it suffers from poor cyclic stability due to excessive volume expansion and reduced electrical conductivity after repeated cycles. To circumvent these issues, we propose that Si can be complexed with electrically conductive Ti2O3 to significantly enhance the reversible capacity and cyclic stability of Si-based anodes. We prepared a ternary nanocomposite of Si/Ti2O3/reduced graphene oxide (rGO) using mechanical blending and subsequent thermal reduction of the Si, TiO2 nanoparticles, and rGO nanosheets. As a result, the obtained ternary nanocomposite exhibited a specific capacity of 985 mAh/g and a Coulombic efficiency of 98.4% after 100 cycles at a current density of 100 mA/g. Furthermore, these ternary nanocomposite anodes exhibited outstanding rate capability characteristics, even with an increased current density of 10 A/g. This excellent electrochemical performance can be ascribed to the improved electron and ion transport provided by the Ti2O3 phase within the Si domains and the structurally reinforced conductive framework comprised of the rGO nanosheets. Therefore, it is expected that our approach can also be applied to other anode materials to enable large reversible capacity, excellent cyclic stability, and good rate capability for high-performance LIBs.

Modulation of photovoltage in mesoscopic perovskite solar cell by controlled interfacial electron injection

Controlled interfacial electron injection was investigated by surface modification of mesoporous TiO2 film with insulating thin ZrO2 layer in a mesoscopic CH3NH3PbI3 perovskite solar cell. Open-circuit voltage (Voc) was linearly increased with increasing the thickness of the surface ZrO2 film from 863 mV for the bare TiO2 to 988 mV for the surface modified TiO2 with 2.2 nm-thick ZrO2 layer (Voc was 1030 mV for the mesoporous ZrO2), which was due to decrease in electron injection by thickening the surface ZrO2 layer. Change in electron injection was confirmed by photoluminescence spectra. Charge collection was diminished with the surface ZrO2 layer, which might be related to the limited electron diffusion length in the solution-processed perovskite layer due to the reduced injection into TiO2. Fill factor was reproducibly improved by surface modification, which is due to increased shunt resistance. By the controlled electron injection method, a power conversion efficiency was improved from 11.7% to 13.6% by introducing 1.1 nm-thick ZrO2 layer on the TiO2 surface.

Interfacial Modification of Perovskite Solar Cells Using an Ultrathin MAI Layer Leads to Enhanced Energy Level Alignment, Efficiencies, and Reproducibility

For the first time, we intentionally deposit an ultrathin layer of excess methylammonium iodide (MAI) on top of a methylammonium lead iodide (MAPI) perovskite film. Using photoelectron spectroscopy, we investigate the role of excess MAI at the interface between perovskite and spiro-MeOTAD hole-transport layer in standard structure perovskite solar cells (PSCs). We found that interfacial, favorable, energy-level tuning of the MAPI film can be achieved by controlling the amount of excess MAI on top of the MAPI film. Our XPS results reveal that MAI dissociates at low thicknesses (<16 nm) when deposited on MAPbI3. It is not the MAI layer but the dissociated species that leads to the interfacial energy-level tuning. Optimized interface energetics were verified by solar cell device testing, leading to both an increase of 19% in average steady-state power conversion efficiency (PCE) and significantly improved reproducibility, which is represented by a much lower PCE standard deviation (from 15 ± 2% to 17.2 ± 0.4%).