Daiki Yamashita

Charge Injection at the Heterointerface in Perovskite CH3NH3PbI3 Solar Cells Studied by Simultaneous Microscopic Photoluminescence and Photocurrent Imaging Spectroscopy

Charge carrier dynamics in perovskite CH3NH3PbI3 solar cells were studied by means of microscopic photoluminescence (PL) and photocurrent (PC) imaging spectroscopy. The PL intensity, PL lifetime, and PC intensity varied spatially on the order of several tens of micrometers. Simultaneous PL and PC image measurements revealed a positive correlation between the PL intensity and PL lifetime, and a negative correlation between PL and PC intensities. These correlations were due to the competition between photocarrier injection from the CH3NH3PbI3 layer into the charge transport layer and photocarrier recombination within the CH3NH3PbI3 layer. Furthermore, we found that the decrease in the carrier injection efficiency under prolonged light illumination leads to a reduction in PC, resulting in light-induced degradation of solar cell devices. Our findings provide important insights for understanding carrier injection at the interface and light-induced degradation in perovskite solar cells.

Ultra-compact 32-channel drop filter with 100 GHz spacing

We demonstrated 32-channel drop filters with 100 GHz spacing consisting of arrayed nanocavities and a waveguide in a photonic crystal silicon slab. Changing the lattice constant of the nanocavities on the subnanometer scale successfully controlled the drop wavelengths at 100 GHz spacing in the wavelength range between 1510 and 1550 nm. The device size was as small as 15 μm × 270 μm, and the variation in drop wavelengths was less than 0.3 nm in terms of standard deviation. We also present a movie showing the operation of the drop filter, demonstrating that the arrayed nanocavities have the potential for developing ultracompact 100 GHz spaced filters in a dense wavelength division multiplexing system.

Raman shift and strain effect in high-Q photonic crystal silicon nanocavity.

We have precisely measured the Raman shift of photonic crystal silicon heterostructure nanocavities for Raman laser applications. We utilized a near-infrared excitation laser of wavelength 1.42 μm in order to avoid local sample heating and exploited two high-Q nanocavity modes to calibrate the Raman frequency. The measured Raman shift was 15.606 THz (520.71 cm(-1)) with a small uncertainty of 1.0 × 10(-3) THz. In addition, we investigated the compressive stress generated in a photonic crystal slab in which a ~5.1 × 10(-3) THz blue shift of the Raman peak and a slight warpage of the slab were observed. We also demonstrated that the stress could be eliminated by using a cantilever structure.

Charge carrier injection at the heterointerface in CH 3 NH 3 PbI 3 perovskite solar cells studied by time-resolved photoluminescence and photocurrent imaging spectroscopy

Organic-inorganic halide perovskite solar cells are attracting much attention from the photovoltaic community because of their high conversion efficiencies exceeding 20%. So far, intrinsic superior optoelectronic properties of this material class have been revealed through comprehensive studies on the thin films and single crystals [1,2]. For further improvement of the device architecture and conversion efficiency, the carrier recombination and transport dynamics in actual solar cell devices have to be clarified. The perovskite solar cell is usually implemented as a heterojunction structure consisting of a perovskite absorber layer and charge transport layers as selective contacts, and the carrier-injection properties at these heterointerfaces play a crucial role for the device performance. Time-resolved photoluminescence (PL) techniques are usually adopted to investigate carrier injection and transport properties [3]. However, PL is also additionally affected by traps and defects within the perovskite layer and also at the heterointerface. On the other hand, the photocurrent (PC) measurement can directly assess the net charge-carrier flow through the whole device. Therefore a combination of PL and PC enables us to investigate the details of the carrier injection. In addition, perovskite solar cells are prepared by a fast and cost-effective low-temperature solution-process, but this simple preparation method also causes a spatial nonuniformity in the optical and electrical properties [4]. Thus, the spatial imaging is invaluable for statistical evaluation of the solar cell characteristics.

A sub-microwatt threshold Raman silicon laser using a high-Q nanocavity

We develop a nanocavity Raman Si laser with a sub-microwatt threshold of 0.52 μW by accurately matching a frequency spacing of the two nanocavity modes to the Raman shift of Si nanocavity.