Dali Shao

High-rate lithiation-induced reactivation of mesoporous hollow spheres for long-lived lithium-ion batteries

Mechanical and chemical degradations of high-capacity anodes, resulting from lithiation-induced stress accumulation, volume expansion and pulverization, and unstable solid-electrolyte interface formation, represent major mechanisms of capacity fading, limiting the lifetime of electrodes for lithium-ion batteries. Here we report that the mechanical degradation on cycling can be deliberately controlled to finely tune mesoporous structure of the metal oxide sphere and optimize stable solid-electrolyte interface by high-rate lithiation-induced reactivation. The reactivated Co3O4 hollow sphere exhibits a reversible capacity above its theoretical value (924 mAh g(-1) at 1.12 C), enhanced rate performance and a cycling stability without capacity fading after 7,000 cycles at a high rate of 5.62 C. In contrast to the conventional approach of mitigating mechanical degradation and capacity fading of anodes using nanostructured materials, high-rate lithiation-induced reactivation offers a new perspective in designing high-performance electrodes for long-lived lithium-ion batteries.

Highly thermally conductive and mechanically strong graphene fibers.

A superior mix of big and small Graphene is often described as an unrolled carbon nanotube. However, although nanotubes are known for their exceptional mechanical and conductivity properties, the same is not true of graphene-based fibers. Xin et al. intercalated small fragments of graphene into the gaps formed by larger graphene sheets that had been coiled into fibers. Once annealed, the large sheets provided pathways for conduction, while the smaller fragments helped reinforce the fibers. The result? Superior thermal and electrical conductivity and mechanical strength. Science, this issue p. 1083 Intercalated graphene sheets form compact, ordered fibers with enhanced thermal conductivity and mechanical properties. Graphene, a single layer of carbon atoms bonded in a hexagonal lattice, is the thinnest, strongest, and stiffest known material and an excellent conductor of heat and electricity. However, these superior properties have yet to be realized for graphene-derived macroscopic structures such as graphene fibers. We report the fabrication of graphene fibers with high thermal and electrical conductivity and enhanced mechanical strength. The inner fiber structure consists of large-sized graphene sheets forming a highly ordered arrangement intercalated with small-sized graphene sheets filling the space and microvoids. The graphene fibers exhibit a submicrometer crystallite domain size through high-temperature treatment, achieving an enhanced thermal conductivity up to 1290 watts per meter per kelvin. The tensile strength of the graphene fiber reaches 1080 megapascals.

High responsivity, fast ultraviolet photodetector fabricated from ZnO nanoparticle–graphene core–shell structures

We report a simple, efficient and versatile method for assembling metal oxide nanomaterial-graphene core-shell structures. An ultraviolet photodetector fabricated from the ZnO nanoparticle-graphene core-shell structures showed high responsivity and fast transient response, which are attributed to the improved carrier transport efficiency arising from graphene encapsulation.

Organic–Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light

The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼10(8) A/W and ∼3 × 10(9), respectively with a UV to visible rejection ratio of ∼10(3). Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production.

Advanced phase change composite by thermally annealed defect-free graphene for thermal energy storage

Organic phase change materials (PCMs) have been utilized as latent heat energy storage and release media for effective thermal management. A major challenge exists for organic PCMs in which their low thermal conductivity leads to a slow transient temperature response and reduced heat transfer efficiency. In this work, 2D thermally annealed defect-free graphene sheets (GSs) can be obtained upon high temperature annealing in removing defects and oxygen functional groups. As a result of greatly reduced phonon scattering centers for thermal transport, the incorporation of ultralight weight and defect free graphene applied as nanoscale additives into a phase change composite (PCC) drastically improve thermal conductivity and meanwhile minimize the reduction of heat of fusion. A high thermal conductivity of the defect-free graphene-PCC can be achieved up to 3.55 W/(m K) at a 10 wt % graphene loading. This represents an enhancement of over 600% as compared to pristine graphene-PCC without annealing at a comparable loading, and a 16-fold enhancement than the pure PCM (1-octadecanol). The defect-free graphene-PCC displays rapid temperature response and superior heat transfer capability as compared to the pristine graphene-PCC or pure PCM, enabling transformational thermal energy storage and management.

An ultraviolet photodetector fabricated from WO3 nanodiscs/reduced graphene oxide composite material

A high sensitivity, fast ultraviolet (UV) photodetector was fabricated from WO₃ nanodiscs (NDs)/reduced graphene oxide (RGO) composite material. The WO₃ NDs/reduced GO composite material was synthesized using a facile three-step synthesis procedure. First, the Na₂WO₄/GO precursor was synthesized by homogeneous precipitation. Second, the Na₂WO₄/GO precursor was transformed into Na₂WO₄/GO composites by acidification. Finally, the Na₂WO₄/GO composites were reduced to WO₃ NDs/RGO via a hydrothermal reduction process. The UV photodetector showed a fast transient response and high responsivity, which are attributed to the improved carrier transport and collection efficiency through graphene. The excellent material properties of the WO₃ NDs/RGO composite demonstrated in this work may open up new possibilities for using WO₃ NDs/RGO for future optoelectronic applications.

Enhanced Ultraviolet Emission from Poly(vinyl alcohol) ZnO Nanoparticles Using a SiO2–Au Core/Shell Structure

Enhanced near band gap edge (NBE) emissions of PVA-ZnO nanoparticles were achieved by employing SiO(2)-Au core/shell nanostructures whereas the defect-level emission (DLE) is greatly suppressed. A maximum enhancement of nearly 400% was observed using SiO(2)-Au for the emission with optical resonance at 554 nm. SiO(2)-Au core/shell nanostructures also show a superior tunability of resonance energy as compared to that of the pure metal nanoparticles. The enhancement of the NBE emission and suppressed DLE is ascribed to the transfer of the energetic electrons excited by surface plasmon from metal nanoparticles to the conduction band of ZnO nanoparticles.

Cl‐Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

An environmentally friendly, low-cost, and large-scale method is developed for fabrication of Cl-doped ZnO nanowire arrays (NWAs) on 3D graphene foam (Cl-ZnO NWAs/GF), and investigates its applications as a highly efficient field emitter and photocatalyst. The introduction of Cl-dopant in ZnO increases free electrons in the conduction band of ZnO and also leads to the rough surface of ZnO NWAs, which greatly improves the field emission properties of the Cl-ZnO NWAs/GF. The Cl-ZnO NWAs/GF demonstrates a low turn-on field (≈1.6 V μm(-1)), a high field enhancement factor (≈12844), and excellent field emission stability. Also, the Cl-ZnO NWAs/GF shows high photocatalytic efficiency under UV irradiation, enabling photodegradation of organic dyes such as RhB within ≈75 min, with excellent recyclability. The excellent photocatalytic performance of the Cl-ZnO NWAs/GF originates from the highly efficient charge separation efficiency at the heterointerface of Cl-ZnO and GF, as well as improved electron transport efficiency due to the doping of Cl. These results open up new possibilities of using Cl-ZnO and graphene-based hybrid nanostructures for various functional devices.

Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate

A heterojunction photodiode was fabricated from ZnO nanowires (NWs) grown on a p-type Si (100) substrate using a hydrothermal method. Post growth hydrogen treatment was used to improve the conductivity of the ZnO NWs. The heterojunction photodiode showed diode characteristics with low reverse saturation current (5.58 × 10(-7) A), relatively fast transient response, and high responsivity (22 A/W at 363 nm). Experiments show that the photoresponsivity of the photodiode is dependent on the polarity of the voltages. The photoresponsivity of the device was discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process.

Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

A heterojunction photodiode was fabricated from multiwalled carbon nanotubes (MWCNTs)/ZnO nanowires/p-Si (100) substrate composite structure. The heterojunction photodiode demonstrated a faster transient response and higher responsivity than the reference sample without deposition of MWCNTs, which is attributed to improved carrier collection and transport efficiency through the MWCNTs network. The high photoresponsivities of the devices are explained in terms of operation as a hybrid of photodiode and photoconductor modes. The spectral response of the devices showed dependence on voltage polarity and is attributed to the high valance band offset in the interfacial region of ZnO and p-Si substrate.