Dana Pokorná

Si/C phases from the IR laser-induced decomposition of silacyclobutane and 1,3-disilacyclobutane

CO 2 laser-induced infrared multiphoton decomposition (IRMPD) and SF 6 photosensitized decomposition (LPD) of silacyclobutane (SCB) and 1,3-disilacyclobutane (DSCB) in the gas phase results in the very efficient deposition of Si/C/H and SiC materials, and it is inferred that the process is dominated by formation of transient silene ; silene rearrangement to methylsilylene ; silene and methylsilylene dehydrogenation ; and polymerization of SiCH n (n < 4) species. The deposits are sensitive to oxygen. Decomposition and SiC formation are favoured with IRMPD experiments conducted with high-energy fluxes. The laser technique is promising for low-temperature chemical vapour deposition of amorphous SiC.

IR laser-induced chemical vapour deposition of silicon oxycarbide phases from 1,1,3,3-tetramethyldisiloxane

Abstract The infrared multiphoton decomposition of 1,1,3,3-tetramethyldisiloxane induced by a TEA CO2 laser affords gaseous C1–C2 hydrocarbons, dimethylsilane and trimethylsilane along with a solid silicon oxycarbide film with almost equal content of Si, C and O atoms. Irradiation of a cw CO2 laser into 1,1,3,3-tetramethyldisiloxane in the presence of SF6 yields dimethylfluorosilane and dimethyldifluorosilane showing the reaction between both compounds.