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Dive into the research topics where Dana Stanescu is active.

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Featured researches published by Dana Stanescu.


Applied Physics Letters | 2012

Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films

H. Magnan; Dana Stanescu; Maxime Rioult; Emiliano Fonda; A. Barbier

The growth, crystal and electronic structures, and photo-electrochemical properties of undoped and Ti doped hematite epitaxial films were studied. We evidence that Ti4+ substitutes Fe3+ in the hematite lattice inducing a slight modification of the oxygen octahedron. Ti doping is shown to induce a shift of the valence band toward higher binding energy due to a movement of the Fermi level toward the conduction band. The resulting modification of electrical conductivity appears as a possible origin of the improvement of photo-electrochemical properties in the doped sample.


Applied Physics Letters | 2015

Tailoring the photocurrent in BaTiO3/Nb:SrTiO3 photoanodes by controlled ferroelectric polarization

Maxime Rioult; Sukanya Datta; Dana Stanescu; S. Stanescu; Rachid Belkhou; Francesco Maccherozzi; H. Magnan; A. Barbier

We demonstrate on prototypical samples containing a ferroelectric layer (BaTiO3/Nb:SrTiO3) that the efficiency of the system, used as photoanode, substantially depends on the polarization state of the ferroelectric layer. We show a significant increase of the photocurrent by a factor larger than 2 when the BaTiO3 film is downward polarized. We explain this finding by the presence of an internal electric field which favors the separation of photo-generated charges.


ACS Applied Materials & Interfaces | 2018

Cross-Correlation between Strain, Ferroelectricity, and Ferromagnetism in Epitaxial Multiferroic CoFe2O4/BaTiO3 Heterostructures

Nathalie Jedrecy; Thomas Aghavnian; Jean-Baptiste Moussy; H. Magnan; Dana Stanescu; Xavier Portier; Marie-Anne Arrio; Cristian Mocuta; Alina Vlad; Rachid Belkhou; P. Ohresser; A. Barbier

Multiferroic biphase systems with robust ferromagnetic and ferroelectric response at room temperature would be ideally suitable for voltage-controlled nonvolatile memories. Understanding the role of strain and charges at interfaces is central for an accurate control of the ferroelectricity as well as of the ferromagnetism. In this paper, we probe the relationship between the strain and the ferromagnetic/ferroelectric properties in the layered CoFe2O4/BaTiO3 (CFO/BTO) model system. For this purpose, ultrathin epitaxial bilayers, ranging from highly strained to fully relaxed, were grown by molecular beam epitaxy on Nb:SrTiO3(001). The lattice characteristics, determined by X-ray diffraction, evidence a non-intuitive cross-correlation: the strain in the bottom BTO layer depends on the thickness of the top CFO layer and vice versa. Plastic deformation participates in the relaxation process through dislocations at both interfaces, revealed by electron microscopy. Importantly, the switching of the BTO ferroelectric polarization, probed by piezoresponse force microscopy, is found dependent on the CFO thickness: the larger is the latter, the easiest is the BTO switching. In the thinnest thickness regime, the tetragonality of BTO and CFO has a strong impact on the 3d electronic levels of the different cations, which were probed by X-ray linear dichroism. The quantitative determination of the nature and repartition of the magnetic ions in CFO, as well as of their magnetic moments, has been carried out by X-ray magnetic circular dichroism, with the support of multiplet calculations. While bulklike ferrimagnetism is found for 5-15 nm thick CFO layers with a magnetization resulting as expected from the Co2+ ions alone, important changes occur at the interface with BTO over a thickness of 2-3 nm because of the formation of Fe2+ and Co3+ ions. This oxidoreduction process at the interface has strong implications concerning the mechanisms of polarity compensation and coupling in multiferroic heterostructures.


Journal of Physical Chemistry C | 2014

Single Crystalline Hematite Films for Solar Water Splitting: Ti-Doping and Thickness Effects

Maxime Rioult; H. Magnan; Dana Stanescu; A. Barbier


Archive | 2004

Magnetic tunnel junction device and writing/reading method for said device

B. Dieny; R. C. Sousa; Dana Stanescu


Journal of Physical Chemistry C | 2016

Oxygen Vacancies Engineering of Iron Oxides Films for Solar Water Splitting

Maxime Rioult; Dana Stanescu; Emiliano Fonda; A. Barbier; H. Magnan


Surface Science | 2015

Local electronic structure and photoelectrochemical activity of partial chemically etched Ti-doped hematite

Maxime Rioult; Rachid Belkhou; H. Magnan; Dana Stanescu; S. Stanescu; Francesco Maccherozzi; Cindy L. Rountree; A. Barbier


Surface & Coatings Technology | 2017

High visible light photocatalytic activity of nitrogen-doped ZnO thin films deposited by HiPIMS

Vasile Tiron; Ioana-Laura Velicu; Dana Stanescu; H. Magnan; Lucel Sirghi


Journal of Electron Spectroscopy and Related Phenomena | 2015

Determination of the cation site distribution of the spinel in multiferroic CoFe2O4 / BaTiO3 layers by X-ray photoelectron spectroscopy

T. Aghavnian; J.-B. Moussy; Dana Stanescu; Rachid Belkhou; Nathalie Jedrecy; H. Magnan; P. Ohresser; M.-A. Arrio; Ph. Sainctavit; A. Barbier


Archive | 2004

Dispositif à jonction tunnel magnétique et procédé d'écriture/lecture d'un tel dispositif

Bernard Dieny; R. C. Sousa; Dana Stanescu

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H. Magnan

Université Paris-Saclay

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Maxime Rioult

Université Paris-Saclay

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H. Magnan

Université Paris-Saclay

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R. C. Sousa

Centre national de la recherche scientifique

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Eddy Foy

Université Paris-Saclay

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