Dane R. McCamey

Embracing the quantum limit in silicon computing

Quantum computers hold the promise of massive performance enhancements across a range of applications, from cryptography and databases to revolutionary scientific simulation tools. Such computers would make use of the same quantum mechanical phenomena that pose limitations on the continued shrinking of conventional information processing devices. Many of the key requirements for quantum computing differ markedly from those of conventional computers. However, silicon, which plays a central part in conventional information processing, has many properties that make it a superb platform around which to build a quantum computer.

Ceramide Mediates Vascular Dysfunction in Diet-Induced Obesity by PP2A-Mediated Dephosphorylation of the eNOS-Akt Complex

Vascular dysfunction that accompanies obesity and insulin resistance may be mediated by lipid metabolites. We sought to determine if vascular ceramide leads to arterial dysfunction and to elucidate the underlying mechanisms. Pharmacological inhibition of de novo ceramide synthesis, using the Ser palmitoyl transferase inhibitor myriocin, and heterozygous deletion of dihydroceramide desaturase prevented vascular dysfunction and hypertension in mice after high-fat feeding. These findings were recapitulated in isolated arteries in vitro, confirming that ceramide impairs endothelium-dependent vasorelaxation in a tissue-autonomous manner. Studies in endothelial cells reveal that de novo ceramide biosynthesis induced protein phosphatase 2A (PP2A) association directly with the endothelial nitric oxide synthase (eNOS)/Akt/Hsp90 complex that was concurrent with decreased basal and agonist-stimulated eNOS phosphorylation. PP2A attenuates eNOS phosphorylation by preventing phosphorylation of the pool of Akt that colocalizes with eNOS and by dephosphorylating eNOS. Ceramide decreased the association between PP2A and the predominantly cytosolic inhibitor 2 of PP2A. We conclude that ceramide mediates obesity-related vascular dysfunction by a mechanism that involves PP2A-mediated disruption of the eNOS/Akt/Hsp90 signaling complex. These results provide important insight into a pathway that represents a novel target for reversing obesity-related vascular dysfunction.

Spin Rabi flopping in the photocurrent of a polymer light-emitting diode

Electron spin is fundamental in electrical and optical properties of organic electronic devices. Despite recent interest in spin mixing and spin transport in organic semiconductors, the actual spin coherence times in these materials have remained elusive. Measurements of spin coherence provide impartial insight into spin relaxation mechanisms, which is significant in view of recent models of spin-dependent transport and recombination involving high levels of spin mixing. We demonstrate coherent manipulation of spins in an organic light-emitting diode (OLED), using nanosecond pulsed electrically detected electron spin resonance to drive singlet-triplet spin Rabi oscillations. By measuring the change in photovoltaic response due to spin-dependent recombination, we demonstrate spin control of electronic transport and thus directly observe spin coherence over 0.5 s. This surprisingly slow spin dephasing underlines that spin mixing is not responsible for magnetoresistance in OLEDs. The long coherence times and the spin manipulation demonstrated are crucially important for expanding the impact of organic spintronics.

Electronic spin storage in an electrically readable nuclear spin memory with a lifetime >100 seconds.

Spin Control Controlling and manipulating the spin of an electron is a central requirement for applications in spintronics. Some of the challenges researchers are facing include efficient creation of spin currents, minimization of Joule heating, and extending the lifetime of electronic spins, which is especially important for quantum information applications. Costache and Valenzuela (p. 1645) address the first challenge by designing and fabricating an efficient and simple superconducting-based single-electron transistor that can produce spin current with controlled flow. Key to the design is asymmetric tunneling, which leads to a ratchet effect (or diode-like behavior), allowing the separation of up and down spins. Jonietz et al. (p. 1648) use electric currents five orders of magnitude smaller than those used previously in nanostructures to manipulate magnetization in a bulk material, MnSi, pointing the way toward decreased Joule heating in spintronic devices. This so-called spin-torque effect causes the rotation of the skyrmion lattice of spins, characteristic of MnSi, which is detected by neutron scattering. Finally, McCamey et al. (p. 1652) extend the short lifetime of an electronic spin of a phosphorous dopant by mapping it onto the much longer lived nuclear spin of the atom. Mapping the nuclear spin back onto the electronic spin allows production of a spin memory with a storage time exceeding 100s, which should prove useful for future practical applications. An electrically readable spin memory in silicon has been developed with storage times exceeding 100 seconds. Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017cm−3. By restricting this secondary implant to a 100×100nm2 region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.

Robust absolute magnetometry with organic thin-film devices

Magnetic field sensors based on organic thin-film materials have attracted considerable interest in recent years as they can be manufactured at very low cost and on flexible substrates. However, the technological relevance of such magnetoresistive sensors is limited owing to their narrow magnetic field ranges (∼30 mT) and the continuous calibration required to compensate temperature fluctuations and material degradation. Conversely, magnetic resonance (MR)-based sensors, which utilize fundamental physical relationships for extremely precise measurements of fields, are usually large and expensive. Here we demonstrate an organic magnetic resonance-based magnetometer, employing spin-dependent electronic transitions in an organic diode, which combines the low-cost thin-film fabrication and integration properties of organic electronics with the precision of a MR-based sensor. We show that the device never requires calibration, operates over large temperature and magnetic field ranges, is robust against materials degradation and allows for absolute sensitivities of <50 nT Hz−1/2.

Highly efficient photochemical upconversion in a quasi-solid organogel

Despite the promise of photochemical upconversion as a means to extend the light-harvesting capabilities of a range of photovoltaic solar energy conversion devices, it remains a challenge to create efficient, solid-state upconverting materials. Until now, a material has yet to be found which is as efficient as a liquid composition. Here, a gelated photochemical upconversion material is reported with a performance indistinguishable from an otherwise identical liquid composition. The sensitizer phosphorescence lifetime, Stern–Volmer quenching constants and upconversion performance (6% under one-sun illumination) were all found to be unchanged in a quasi-solid gelated sample when compared to the liquid sample. The result paves the way to a new family of efficient photochemical upconversion materials comprised of macroscopically solid, but microscopically liquid gel, for application in photovoltaics and photocatalytic water-splitting.

Beyond Shockley–Queisser: Molecular Approaches to High-Efficiency Photovoltaics

Molecular materials afford abundant flexibility in the tunability of physical and electronic properties. As such, they are ideally suited to engineering low-cost, flexible, light-harvesting materials that break away from the single-threshold paradigm. Single-threshold solar cells are capable of harvesting a maximum of 33.7% of incident sunlight, whereas two-threshold cells are capable of energy harvesting efficiencies exceeding 45%. In this Perspective, we provide the theoretical background with which upper efficiency limits for various multiple-threshold solar cell architectures may be calculated and review and discuss various reports that employ processes such as triplet-triplet annihilation and singlet fission in multiple-threshold devices comprised of molecular materials.

Long-lived spin coherence in silicon with an electrical spin trap readout

Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0>8.5 T) and low temperatures (T=2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 mus, 50 times longer than the previous maximum for electrically detected spin readout experiments.

Fast nuclear spin hyperpolarization of phosphorus in silicon

We experimentally demonstrate a method for obtaining nuclear spin hyperpolarization, that is, polarization significantly in excess of that expected at thermal equilibrium. By exploiting a nonequilibrium Overhauser process, driven by white light irradiation, we obtain more than 68% negative nuclear polarization of phosphorus donors in silicon. This polarization is reached with a time constant of approximately 150 sec, at a temperature of 1.37 K and a magnetic field of 8.5 T. The ability to obtain such large polarizations is discussed with regards to its significance for quantum information processing and magnetic resonance imaging.