Daniel C. Law

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

An approach for an all lattice-matched multijunction solar cell optimized design is presented with 5.807u2009A lattice constant, together with a detailed analysis of its performance by means of full device modeling. The simulations show that a (1.93u2009eV)In_(0.37)Al_(0.63)As/(1.39u2009eV)In_(0.38)Ga_(0.62)As_(0.57)P_(0.43)/(0.94u2009eV)In_(0.38)Ga_(0.62)As 3-junction solar cell can achieve efficiencies >51% under 100-suns illumination (with V_(oc)u2009=u20093.34u2009V). As a key proof of concept, an equivalent 3-junction solar cell lattice-matched to InP was fabricated and tested. The independently connected single junction solar cells were also tested in a spectrum splitting configuration, showing similar performance to a monolithic tandem device, with V_(oc)u2009=u20091.8u2009V.

GaInP∕GaAs dual junction solar cells on Ge∕Si epitaxial templates

In this study, we report synthesis of large area (≫ 2 cm2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates.

Advances in High-Efficiency III-V Multijunction Solar Cells

The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga 0 .44 In 0 .56 P / Ga 0.92 In 0.08 As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm 2 , 25 ∘ C ), and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I 2 R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured efficiency of 35.7% under the AM1.5 direct terrestrial solar spectrum at 256 suns.

Wide-band-gap InAlAs solar cell for an alternative multijunction approach

We have fabricated an In_(0.52)Al_(0.48)As solar cell lattice-matched to InP with efficiency higher than 14% and maximum external quantum efficiency equal to 81%. High quality, dislocation-free In_xAl_(1−x)As alloyed layers were used to fabricate the single junction solar cell. Photoluminescence of In_xAl_(1−x)As showed good material quality and lifetime of over 200 ps. A high band gap In_(0.35)Al_(0.65)As window was used to increase light absorption within the p-n absorber layer and improve cell efficiency, despite strain. The InAlAs top cell reported here is a key building block for an InP-based three junction high efficiency solar cell consisting of InAlAs/InGaAsP/InGaAs lattice-matched to the substrate.

Semiconductor-bonded III–V multijunction space solar cells

Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semiconductor-bonding technique. The direct-bonded 5-junction cells consist of (Al)GaInP, AlGa(In)As, Ga(In)As, GaInPAs, and GaIn(P)As subcells deposited on GaAs or Ge and InP substrates. Large-area, high-mechanical strength, and low-electrical resistance direct-bonded interface was achieved to support the high-efficiency solar cell structure. Preliminary 1-sun AM0 testing of the 5-junction cells showed encouraging results. One of the direct-bonded solar cell achieved an open-circuit-voltage of 4.7V, a short-circuit current-density of 11.7 mA/cm2, a fill factor of 0.79, and an efficiency of 31.7%. Spectral response measurement of the five-junction cell revealed excellent external quantum efficiency performance for each subcell and across the direct-bonded interface. Improvements in crystal growth and current density allocation among subcells can further raise the 1-sun, AM0 conversion efficiency of the direct-bonded 5-junction cell to 35 – 40%.

Design Approaches and Materials Processes for Ultrahigh Efficiency Lattice Mismatched Multi-Junction Solar Cells

In this study, we report synthesis of large area (gt;2cm2 ), crack-free GaAs and GaInP double heterostructures grown in a multi-junction solar cell-like structure by MOCVD. Initial solar cell data are also reported for GaInP top cells. These samples were grown on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. The double heterostructures exhibit radiative emission with uniform intensity and wavelength in regions not containing interfacial bubble defects. The minority carrier lifetime of ~1ns was estimated from photoluminescence decay measurements in both double heterostructures. We also report on the structural characteristics of heterostructures, determined via atomic force microscopy and transmission electron microscopy, and correlate these characteristics to the spatial variation of the minority carrier lifetime

First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells

Spectrolab has demonstrated the first lattice matched InAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising results with an open circuit voltage (Voc) of 1.8V, a short-circuit current density (Jsc) of 11.0 mA/cm2, a fill factor of 64.4 %, and a 1-sun AM1.5D efficiency of 13.8%. The same cell also passes 27-suns under concentration. Improvements in layer design and crystal quality of advanced features can further raise the 1-sun and concentrated AM1.5D conversion efficiency of the InP-based triple junction cell beyond 20%.

Lightweight, Flexible, High-Efficiency III-V Multijunction Cells

Large-area (26.6 cm2), thin GaInP/GaInAs/Ge triple-junction (TJ) solar cells with thickness as low as 50 mum were demonstrated. The average conversion efficiency of fifty thin TJ cells is 28 %, 1-sun AMO. The thin TJ cells showed nominal performance after welding of interconnects and flexibility test (50 mm curvature radius). Prototype coupons made with these thin TJ cells met flexible solar module bending requirement of 100 mm radius. The thin-cell coupons showed a specific power of 500 W/kg and a power density of 325 W/m2 . Ultra-thin (<10 mum thick) GaInP/Ga(In)As dual-junction (DJ) cells with size ranges from 0.5 to 26.6 cm2 were fabricated using 4 Ge or GaAs wafers. Preliminary test data of the ultra-thin DJ cells showed a specific power of 2067 W/kg and a power density of 283 W/m2. The ultra-thin solar cells continued to demonstrate nominal performance after handling and flexing to a radius of 12 mm. Our results suggested that both the thin cell and the ultra-thin cell technologies can be incorporated with current and future solar cell designs

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

In this study, we report synthesis of large area (≫ 2 cm2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates.

Carbon nanotube-composite wafer bonding for ultra-high efficiency III–V multijunction solar cells

Device-wafer bonding provides a platform for the implementation of ultra-high-efficiency multijunction solar cell designs, by allowing optimal subcell bandgap combinations to be attained while using only high-quality materials lattice-matched to their growth substrates. One promising new method for achieving wafer bonding is to use carbon nanotube composite thin films as the bonding agent between subcells grown on dissimilar substrates. In this paper we present the first demonstration of CNT-composite bonding of III–V materials, and evaluate its suitability for solar-cell integration in terms of optical transparency, electrical conductivity, bond uniformity and robustness, and bonded-device electrical performance. Another, relatively more mature method for device-wafer integration is that of direct semiconductor bonding technology. In order to provide a basis for comparison with CNT-bonding, we also summarize the latest achievements of the SBT solar cell development effort at Spectrolab.