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Dive into the research topics where Daniel Cederkrantz is active.

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Featured researches published by Daniel Cederkrantz.


Journal of Applied Physics | 2012

Enhanced thermoelectric properties of Mg2Si by addition of TiO2 nanoparticles

Daniel Cederkrantz; Nader Farahi; Kasper A. Borup; Bo B. Iversen; Mats Nygren; Anders Palmqvist

The effects on the thermoelectric properties of Mg2Si when adding TiO2 nanoparticles have been evaluated experimentally. A batch of Mg2Si was prepared through direct solid state reaction and divided into portions which were mechanically mixed with different amounts of TiO2 nanoparticles ranging from 0.5 to 3 vol% and subsequently sintered to disks. All materials showed n-type conduction and the absolute value of the Seebeck coefficient was reduced with increasing amount of TiO2 added, while the electrical resistivity was greatly reduced. The thermal conductivity was surprisingly little affected by the addition of the nanoparticles. An optimum value of the thermoelectric figure-of-merit ZT = TS2 sigma/k was found for the addition of 1 vol% TiO2, showing almost three times higher ZT value than that of the pure Mg2Si. Larger TiO2 additions resulted in lower ZT values and with 3 vol% added TiO2 the ZT was comparable to the pure Mg2Si. The sintering process resulted in reduction or chemical reaction of all TiO2 to TiSi2 and possibly elemental titanium as well as reduced TiOx. The increased electrical conductivity and the decreased Seebeck coefficient were found due to an increased charge carrier concentration, likely caused by the included compounds or titanium-doping of the Mg2Si matrix. The low observed effect on the thermal conductivity of the composites may be explained by the relatively higher thermal conductivity of the included compounds, counter-balancing the expected increased grain boundary scattering. Alternatively, the introduction of compounds does not significantly increase the concentration of scattering grain boundaries.


Journal of Applied Physics | 2009

Thermal stability and thermoelectric properties of p-type Ba8Ga16Ge30 clathrates

Daniel Cederkrantz; A. Saramat; G. J. Snyder; Anders Palmqvist

The thermal stability of p-type Ba(8)Ga(16)Ge(3)0 clathrates grown from gallium flux has been tested by heat treatment in low pressure Ar atmosphere at 400, 600, and 800 degrees C. Significant gallium loss was observed for all samples during heat treatment. The treatment at 400 degrees C does not significantly change the sample properties, and the samples remain p-type and comparable to the untreated, as-prepared, sample. At 600 degrees C the sample switches from extrinsic p-type to extrinsic n-type, presumably due to significant loss of Ga, and shows a high thermopower but a reduced electrical conductivity compared to as-made n-type samples. Surprisingly, after a thermal treatment at 800 degrees C, the crystal structure seemingly loses less Ga, only reducing the hole concentration to near intrinsic levels and thus has a negative impact on ZT. Regardless of the heat treatment temperature of the p-type samples the thermal conductivity remained exceptionally low, for some samples 0.9 W/m K. Heat treatment can thus greatly affect the thermoelectric properties of p-type Ba(8)Ga(16)Ge(3)0, but the crystal structure remains intact


Journal of Applied Physics | 2012

Thermoelectric properties of Ba8Ga16Ge30 with TiO2 nanoinclusions

Richard Heijl; Daniel Cederkrantz; Mats Nygren; Anders Palmqvist

The effects on thermal and electrical properties of adding small amounts of TiO2 nanoinclusions to bulk Ba8Ga16Ge30 clathrate have been investigated. The thermal properties were analysed using the transient plane source technique and the analysis showed a significant decrease in thermal conductivity as the volume fraction of TiO2 increased from 0 vol. % to 1.2 vol. %. The introduction of TiO2 nanoparticles caused a shift in the peak value of the Seebeck coefficient towards lower temperatures. The maximum value of the Seebeck coefficient was, however, only little affected. The introduction of TiO2 nanoparticles into the bulk Ba8Ga16Ge30 resulted in an increased electrical resistivity of the sample, thus simultaneously reducing the charge carrier contribution to the thermal conductivity, partly explaining the decrease in total thermal conductivity. Due to the large increase in resistivity of the samples, ZT was only somewhat improved for the material with 0.4 vol. % TiO2 while the ZT values of the other materials were lower than for the reference Ba8Ga16Ge30 material without TiO2 nanoparticles. The combined results are consistent with a scenario where the nanoparticle introduction causes a light doping of the semiconductor matrix and an increased concentration of phonon scattering centres.


Journal of Applied Physics | 2010

Thermoelectric properties of partly Sb- and Zn-substituted Ba8Ga16Ge30 clathrates

Daniel Cederkrantz; Mats Nygren; Anders Palmqvist

The effects on the thermoelectric properties of n-Ba(8)Ga(16)Ge(30) when substituting small amounts of the Ga or Ge with Sb or Zn have been investigated. A number of syntheses were prepared in quat ...


Review of Scientific Instruments | 2016

Thermal conductivity versus depth profiling of inhomogeneous materials using the hot disc technique

A. Sizov; Daniel Cederkrantz; L. Salmi; Arne Rosén; L. Jacobson; S. E. Gustafsson; Mattias Gustavsson

Transient measurements of thermal conductivity are performed with hot disc sensors on samples having a thermal conductivity variation adjacent to the sample surface. A modified computational approach is introduced, which provides a method of connecting the time-variable to a corresponding depth-position. This allows highly approximate-yet reproducible-estimations of the thermal conductivity vs. depth. Tests are made on samples incorporating different degrees of sharp structural defects at a certain depth position inside a sample. The proposed methodology opens up new possibilities to perform non-destructive testing; for instance, verifying thermal conductivity homogeneity in a sample, or estimating the thickness of a deviating zone near the sample surface (such as a skin tumor), or testing for presence of other defects.


AIP Advances | 2016

Thermal depth profiling of materials for defect detection using hot disk technique

Besira Mekonnen Mihiretie; Daniel Cederkrantz; M. Sundin; Arne Rosén; Henrik Otterberg; Åsa Hinton; Björn Berg; Magnus Karlsteen

A novel application of the hot disk transient plane source technique is described. The new application yields the thermal conductivity of materials as a function of the thermal penetration depth which opens up opportunities in nondestructive testing of inhomogeneous materials. The system uses the hot disk sensor placed on the material surface to create a time varying temperature field. The thermal conductivity is then deduced from temperature evolution of the sensor, whereas the probing depth (the distance the heat front advanced away from the source) is related to the product of measurement time and thermal diffusivity. The presence of inhomogeneity in the structure is manifested in thermal conductivity versus probing depth plot. Such a plot for homogeneous materials provides fairly constant value. The deviation from the homogeneous curve caused by defects in the structure is used for inhomogeneity detection. The size and location of the defect in the structure determines the sensitivity and possibility of detection. In addition, a complementary finite element numerical simulation through COMSOL Multiphysics is employed to solve the heat transfer equation. Temperature field profile of a model material is obtained from these simulations. The average rise in temperature of the heat source is calculated and used to demonstrate the effect of the presence of inhomogeneity in the system.


Proceedings of the 4th International Congress on Sport Sciences Research and Technology Support | 2016

Numerical Simulation and Experimental Scheme for Monitoring Hoof Wall Structure and Health in Sport Horses

Karl Hanstorp; Besira Mekonnen Mihiretie; Magnus Karlsteen; Arne Rosén; Maria Sundin; Daniel Cederkrantz; Henrik Otterberg; Åsa Hinton; Björn Berg

This study provides a computational model developed to demonstrate the possibility of monitoring hoof structure and health in equestrian sport. This is achieved by employing finite element simulation of threedimensional heat flow from a surface heat source into a hoof structure while simultaneously sensing the surface temperature. The time evolution of the recorded surface temperature, transient curve, is used to investigate hoof structure and predict its intactness by comparing these curves for three different models. We have observed differences between the transient curves obtained from a normal hoof structure, a hoof structure containing a foreign material and hoof capsule subjected to wall separation. An experimental method for probing hoof profile was briefly discussed. It uses temperature sensor/heat source. The method can determine the thermal conductivity of the hoof along the hoof structure from the recorded transient curve. Thus, it displays the hoof structure by utilizing the thermal conductivity variation between the hoof parts.


International Journal of Heat and Mass Transfer | 2017

Finite element modeling of the Hot Disc method

Besira Mekonnen Mihiretie; Daniel Cederkrantz; Arne Rosén; Henrik Otterberg; Maria Sundin; Silas E. Gustafsson; Magnus Karlsteen


Archive | 2012

Synthesis and Characterization of New Inorganic Thermoelectric Materials

Daniel Cederkrantz


Archive | 2016

Method and system for hoof analysis

M. Sundin; Magnus Karlsteen; Björn Berg; Arne Rosén; Henrik Otterberg; Daniel Cederkrantz

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Anders Palmqvist

Chalmers University of Technology

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Arne Rosén

University of Gothenburg

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Magnus Karlsteen

Chalmers University of Technology

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Besira Mekonnen Mihiretie

Chalmers University of Technology

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M. Sundin

University of Gothenburg

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Maria Sundin

University of Gothenburg

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Richard Heijl

Chalmers University of Technology

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Fredrik Gunnarsson

Chalmers University of Technology

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Hanna Härelind Ingelsten

Chalmers University of Technology

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