Daniel E. Bürgler

Accessing 4f-states in single-molecule spintronics

Magnetic molecules are potential functional units for molecular and supramolecular spintronic devices. However, their magnetic and electronic properties depend critically on their interaction with metallic electrodes. Charge transfer and hybridization modify the electronic structure and thereby influence or even quench the molecular magnetic moment. Yet, detection and manipulation of the molecular spin state by means of charge transport, that is, spintronic functionality, mandates a certain level of hybridization of the magnetic orbitals with electrode states. Here we show how a judicious choice of the molecular spin centres determines these critical molecule-electrode contact characteristics. In contrast to late lanthanide analogues, the 4f-orbitals of single bis(phthalocyaninato)-neodymium(III) molecules adsorbed on Cu(100) can be directly accessed by scanning tunnelling microscopy. Hence, they contribute to charge transport, whereas their magnetic moment is sustained as evident from comparing spectroscopic data with ab initio calculations. Our results showcase how tailoring molecular orbitals can yield all-electrically controlled spintronic device concepts.

Spin reorientations induced by morphology changes in Fe/Ag(001)

By means of magneto-optical Kerr effect we observe spin reorientations from in-plane to out-of-plane and vice versa upon annealing thin Fe films on Ag(001) at increasing temperatures. Scanning tunneling microscopy images of the different Fe films are used to quantify the surface roughness. The observed spin reorientations can be explained with the experimentally acquired roughness parameters by taking into account the effect of roughness on both the magnetic dipolar and the magnetocrystalline anisotropy.

Thickness dependence of linear and quadratic magneto-optical Kerr effects in ultrathin Fe(001) films

Magneto-optical Kerr effect (MOKE) magnetometry is one of the most widely employed techniques for the characterization of ferromagnetic thin-film samples. Some information, such as coercive fields or anisotropy strengths can be obtained without any knowledge of the optical and magneto-optical (MO) properties of the material. On the other hand, a quantitative analysis, which requires a precise knowledge of the materials index of refraction n and the MO coupling constants K and G is often desirable, for instance for the comparison of samples, which are different with respect to ferromagnetic layer thicknesses, substrates, or capping layers. While the values of the parameters n and the linear MO coupling parameter K reported by different authors usually vary considerably, the relevant quadratic MO coupling parameters G of Fe are completely unknown. Here, we report on measurements of the thickness dependence (0-60nm) of the linear and quadratic MOKE in epitaxial bcc-Fe(001) wedge-type samples performed at a commonly used laser wavelength of 670nm. By fitting the thickness dependence we are able to extract a complete set of parameters n, K, (G11 - G12), and G44 for the quantitative description of the MOKE of bcc-Fe(001). We find sizable different n, K, and G parameters for films thinner than about 10nm as compared to thicker films, which is indicative of a thickness dependence of the electronic properties or of surface contributions to the MOKE. The effect size of the quadratic MOKE is found to be about a third of the record values recently reported for Co2FeSi.

Correlation of magnetotransport and structure in sputtered Co/Cu multilayers

Magnetic multilayer structures of Co/Cu prepared by dc magnetron sputtering are studied with respect to changing number of bilayers (N) for different thicknesses of the Cu spacer layer corresponding to different coupling conditions according to the oscillatory interlayer exchange coupling. X-ray reflectivity and diffuse scattering show that the multilayers become smoother with increasing N. The growth exponent of the roughness is found to be lower for a multilayer than for a single-layer film of similar thickness. The roughness of subsequent interfaces along the stack is conformal, and the lateral correlation does not change with the period number, but depends on the thickness of the spacer layers. The improved layer structure for larger N increases the antiferromagnetic coupling fraction as inferred from magneto-optic Kerr effect measurements and thereby increases the giant magnetoresistance (GMR) ratio up to 35% for N = 10. Thus, the first few bilayers do not contribute to the GMR but act as a buffer to improve the growth conditions for the following bilayers. The first about five bilayers can be replaced by a bottom Co layer of equivalent thickness which also improves the layer structure for a subsequently deposited lower number of bilayers without much loss in the GMR ratio. This smoothening effect due to the increasing of the thickness of the bottom-most layer is related to the simultaneously decreasing grain size.

Tunneling in epitaxial Fe/Si/Fe structures with strong antiferromagnetic interlayer coupling

Fe(5 nm)/Si(0.8–2 nm)/Fe(5 nm) structures are grown by molecular-beam epitaxy on Ag(001) buffered GaAs substrates. Ferromagnetic tunneling junctions with crossed electrodes and junction areas ranging from 22 to 225 μm2 are patterned using photolithography. Antiparallel alignment of the magnetizations due to antiferromagnetic interlayer coupling, which is confirmed by longitudinal magneto-optical Kerr effect hysteresis loops, exists for the whole range of spacer thicknesses. Transport properties in current perpendicular to the sample plane geometry are examined by the four-point method in the temperature range from 4 K to room temperature. As a function of spacer thickness, the junctions show a strong increase of the resistance times area product from ≈1 Ω μm2 to more than 10 kΩ μm2. The dI/dV−V curves are parabolic and asymmetric and thus characteristic for trapezoidal tunneling barriers. The mean barrier heights derived from Brinkman fits range from 0.3 to 0.8 eV. The zero-bias resistance of the tunnelin...

Novel strain sensors based on magnetostrictive GMR/TMR structures

Summary form only given. While there has been considerable research devoted to the use of GMR (giant magnetoresistance) and TMR (tunnel magnetoresistance) layered structures-these studies have focused mainly on data storage applications (e.g., MRAM, Read-write heads) and magnetic field sensors. Comparatively few studies have been devoted to the exploitation of these materials in broader industrial applications for use such as stress, strain or pressure sensors. This study presents an investigation into various magnetic layer structures suitable for devices sensing mechanical responses such as stress, strain and pressure.

Quantitative characterization of nanoscale polycrystalline magnets with electron magnetic circular dichroism

Electron magnetic circular dichroism (EMCD) allows the quantitative, element-selective determination of spin and orbital magnetic moments, similar to its well-established X-ray counterpart, X-ray magnetic circular dichroism (XMCD). As an advantage over XMCD, EMCD measurements are made using transmission electron microscopes, which are routinely operated at sub-nanometre resolution, thereby potentially allowing nanometre magnetic characterization. However, because of the low intensity of the EMCD signal, it has not yet been possible to obtain quantitative information from EMCD signals at the nanoscale. Here we demonstrate a new approach to EMCD measurements that considerably enhances the outreach of the technique. The statistical analysis introduced here yields robust quantitative EMCD signals. Moreover, we demonstrate that quantitative magnetic information can be routinely obtained using electron beams of only a few nanometres in diameter without imposing any restriction regarding the crystalline order of the specimen.

Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)

We have performed a combined spectroscopy and microscopy study on surfaces of Sb2Te3/Si(111) thin films exposed to air and annealed under ultra-high vacuum conditions. Scanning tunneling microscopy images, with atomic resolution present in most areas of such processed surfaces, show a significant amount of impurities and defects. Scanning tunneling spectroscopy reveals the bulk band gap of ∼170 meV centered ∼65 meV above the Fermi level. This intrinsic p-type doping behavior is confirmed by high-resolution angle-resolved photoemission spectra, which show the dispersions of the lower Dirac cone and the spectral weight of the bulk valence bands crossing the Fermi level. Spin-polarized photoemission revealed up to ∼15% in-plane spin polarization for photoelectrons related to the topologically protected Dirac cone states near the Fermi level, and up to ∼40% for several states at higher binding energies. The results are interpreted using ab initio electronic structure simulations and confirm the robustness of ...

Exchange coupling of ferromagnetic films across metallic and semiconducting interlayers

Recent results obtained in our laboratories on interlayer exchange coupling of Fe films across interlayers of iron silicides, Fe1−xSix with x = 0.5– 1, are reviewed. Samples are prepared by molecular beam epitaxy and characterized by means of low-energy electron diffraction and cross-sectional transmission electron microscopy. Coupling across interlayers of iron silicide with x ≈ 0.5 is found to be oscillatory with a strength of the order of 1 mJ m−2, and across well ordered Si interlayers (nominally x = 1) the coupling is exponentially decaying. In the latter case the maximum coupling turns out to be surprisingly strong (}6

Injection locking of the gyrotropic vortex motion in a nanopillar

>> 6 mJ m−2), in particular considering the fact that the electrical resistivity is found to be large. Current–voltage curves for currents across the interlayers are characteristic of electron tunnelling. Soft-x-ray emission and near-edge x-ray absorption spectroscopy further support a semiconducting nature for the nominally pure Si interlayers.