Daniel F. Blanks

Nano electronic modelling (NEMO)

The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.

Experimentally verified quantum device simulations based on multiband models, Hartree self-consistency, and scattering assisted charging

Accurate predictions of the I-V characteristics of Esaki diodes, resonant tunneling diodes (RTD), and resonant interband tunneling diodes (RITD) require sophisticated models of bandstructure, charging, and scattering. We present direct comparisons of experimental and simulation data based on single, two, and 10 band models and the worlds first calculation of the electrostatic potential obtained self-consistently with scattering-assisted charging. This charge results from the incoherent scattering off of alloy disorder, interface roughness, acoustic phonons and polar-optical phonons.