Daniel J. Clark

Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties

The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI3, are reported (A = Cs, organic cation). The systematic study of this reaction system led to the isolation of 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compound, we have prepared methylammonium, CH3NH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, (CH3)3NHGeI3 (6), and isopropylammonium, (CH3)2C(H)NH3GeI3 (7) analogues. The crystal structures of the compounds are classified based on their dimensionality with 1–4 forming 3D perovskite frameworks and 5–7 1D infinite chains. Compounds 1–7, with the exception of compounds 5 (centrosymmetric) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compounds have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compounds have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). Herein, we report on the second harmonic generation (SHG) properties of the compounds, which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm(2)). The second-order nonlinear susceptibility, χS(2), was determined to be 125.3 ± 10.5 pm/V (1), (161.0 ± 14.5) pm/V (2), 143.0 ± 13.5 pm/V (3), and 57.2 ± 5.5 pm/V (4). First-principles density functional theory electronic structure calculations indicate that the large SHG response is attributed to the high density of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation.

Molecular Germanium Selenophosphate Salts: Phase-Change Properties and Strong Second Harmonic Generation

A new series of germanium chalcophosphates with the formula A(4)GeP(4)Q(12) (A = K, Rb, Cs; Q = S, Se) have been synthesized. The selenium compounds are isostructural and crystallize in the polar orthorhombic space group Pca2(1). The sulfur analogues are isostructural to one another but crystallize in the centrosymmetric monoclinic space group C2/c. All structures contain the new molecular anion [GeP(4)Q(12)](4-); however, the difference between the sulfides and selenides arises from the change in crystal packing. Each discrete molecule is comprised of two ethane-like P(2)Q(6) units that chelate to a central tetrahedral Ge(4+) ion in a bidentate fashion. The selenides were synthesized pure by stoichiometric reaction of the starting materials, whereas the sulfides contained second phases. The band gaps of the molecular salts are independent of the alkali metal counterions and have a value of 2.0 eV for the selenides and 3.0-3.1 eV for the sulfides. All A(4)GeP(4)Se(12) compounds melt congruently, and the potassium analogue can be quenched to give a glassy phase that retains its short-range order as shown by Raman spectroscopy and powder X-ray diffraction. Interestingly, K(4)GeP(4)Se(12) is a phase-change material that reversibly converts between glassy and crystalline states and passes through a metastable crystalline state upon heating just before crystallizing into its slow-cooled form. Initial second harmonic generation (SHG) experiments showed crystalline K(4)GeP(4)Se(12) outperforms the other alkali metal analogues and exhibits the strongest second harmonic generation response among reported quaternary chalcophosphates, ~30 times that of AgGaSe(2) at 730 nm. A more thorough investigation of the nonlinear optical (NLO) properties was performed across a range of wavelengths that is almost triple that of previous reports (λ = 1200-2700 nm) and highlights the importance of broadband measurements. Glassy K(4)GeP(4)Se(12) also exhibits a measurable SHG response with no poling.

Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds

Cu2CdSnS4 and α/β-Cu2ZnSiS4 meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu2CdSnS4 and α/β-Cu2ZnSiS4 display wide ranges of optical transparency, 1.4-25 and 0.7-25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu2CdSnS4 is 0.2 GW/cm(2), whereas α/β-Cu2ZnSiS4 has a LDT of 2.0 GW/cm(2) for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.

K4GeP4Se12: a case for phase-change nonlinear optical chalcogenide

We report on broadband nonlinear optical (NLO) responses from a phase-change chalcogenide compound K(4)GeP(4)Se(12). Its glassy phase exhibits unusual second-harmonic generation (SHG) due to the preservation of local crystallographic order. The SHG efficiency of the glassy form can be boosted by more than 2 orders of magnitude by simple heat treatment. Strong SHG and third-harmonic generation from both glassy and crystalline compounds were characterized over a wide wavelength range of 1.2-4.0 μm. Our results imply that K(4)GeP(4)Se(12) can be utilized for various NLO applications in the mid-infrared spectrum.

Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates

We have investigated the second-order nonlinear optical (NLO) properties of CVD-grown MoS2 monolayer (ML) transferred onto transparent substrates such as fused silica and polyethylene terephthalate. The physical properties of the transferred MLs were characterized by optical and NLO methods. We measured the second-order susceptibility χ(2) in the spectral range of λ= 1064–1600 nm in which the corresponding second harmonic radiation resonates with the exciton levels. It was found that χ(2) is strongly enhanced by up to a factor of 5 near the A- and B-exciton levels due to two-photon resonance. The absolute χ(2) values of our samples determined by both reflection and transmission geometry are on par with that of as-grown MLs. Our results imply that the cavity-confinement scheme can be employed for maximizing the nonlinear optical efficiency of atomically thin transition metal dichalcogenides for transparent/flexible optoelectronics applications, especially when oriented stacking of transferred MLs are contr...

Highly efficient infrared optical nonlinearity of a wide-bandgap chalcogenide Li(2)CdGeS(4).

A quaternary chalcogenide Li(2)CdGeS(4) is an excellent candidate for a nonlinear optical (NLO) material exhibiting wide transparency spanning from its fundamental band edge (3.15 eV) to the terahertz regime (23.5 μm). Strong optical nonlinearity of Li(2)CdGeS(4) has been investigated over a wide spectral range (λ=1.064-3.3  μm) based on second- and third-harmonic generation. The compound has a high damage threshold at λ=1.064  μm because of saturable three-photon absorption, and is phase-matchable for λ>1.5  μm with χ(2) ≃50  pm/V. It also exhibits strong third-order nonlinearity of χ(3) ≃10(5) pm(2)/V(2). Li(2)CdGeS(4) is promising for high-power NLO applications in the broad infrared spectrum.

Impact of two-photon absorption on second-harmonic generation in CdTe as probed by wavelength- dependent Z-scan nonlinear spectroscopy

We present a nonlinear optical (NLO) probe technique, wavelength-dependent Z-scan nonlinear spectroscopy (WDZNS), which can be utilized for assessing broadband NLO properties of materials. Unlike typical Z-scans, WDZNS can spectrally monitor the frequency-doubled output as a function of wavelength λ as well as input intensity I. Based on WDZNS we have investigated the strong impact of two-photon absorption (TPA) on second-harmonic generation in CdTe over a broad TPA range. This complicated NLO effect is characterized by the λ-dependent TPA coefficient, which is consistent with a simple two-band model. The relative second-order NLO dispersion derived from WDZNS is also consistent with previous measurements.

Li2CdGeSe4 and Li2CdSnSe4: biaxial nonlinear optical materials with strong infrared second-order responses and laser-induced damage thresholds influenced by photoluminescence

Two new biaxial, diamond-like semiconductors, Li2CdGeSe4 and Li2CdSnSe4, were prepared via high-temperature, solid-state synthesis. Single crystal X-ray diffraction and X-ray powder diffraction coupled with Rietveld refinement were used to refine the crystal structures and assess the phase purity, respectively. Both compounds adopt the lithium cobalt(II) silicate structure type. Strong second-order nonlinear optical (NLO) susceptibility, phase matchability, relatively high thermal stability, and excellent transparency deem both materials potential infrared (IR) NLO candidates. Li2CdGeSe4 and Li2CdSnSe4 display optical bandgaps of approximately 2.5 and 2.2 eV, respectively. Li2CdSnSe4 exhibits a strong, red-light emission under 1064 nm excitation, allowing the compound to release energy that accumulates by two-photon absorption under Nd:YAG laser radiation. Therefore, Li2CdSnSe4 shows a high laser-induced damage threshold (LIDT) of 0.7 GW cm−2. This special phenomenon is remarkable and may open a new avenue in searching for promising IR NLO materials with large LIDTs.