Daniel Kopiec

Expanded beam deflection method for simultaneous measurement of displacement and vibrations of multiple microcantilevers

Here we present an extension of optical beam deflection (OBD) method for measuring displacement and vibrations of an array of microcantilevers. Instead of focusing on the cantilever, the optical beam is either focused above or below the cantilever array, or focused only in the axis parallel to the cantilevers length, allowing a wide optical line to span multiple cantilevers in the array. Each cantilever reflects a part of the incident beam, which is then directed onto a photodiode array detector in a manner allowing distinguishing between individual beams. Each part of reflected beam behaves like a single beam of roughly the same divergence angle in the bending sensing axis as the incident beam. Since sensitivity of the OBD method depends on the divergence angle of deflected beam, high sensitivity is preserved in proposed expanded beam deflection (EBD) method. At the detector, each spots position is measured at the same time, without time multiplexing of light sources. This provides real simultaneous readout of entire array, unavailable in most of competitive methods, and thus increases time resolution of the measurement. Expanded beam can also span another line of cantilevers allowing monitoring of specially designed two-dimensional arrays. In this paper, we present first results of application of EBD method to cantilever sensors. We show how thermal noise resolution can be easily achieved and combined with thermal noise based resonance frequency measurement.

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0001) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current-voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.

Design, technology, and application of integrated piezoresistive scanning thermal microscopy (SThM) microcantilever

In this article we describe a novel piezoresistive cantilever technology The described cantilever can be also applied in the investigations of the thermal surface properties in all Scanning Thermal Microscopy (SThM) techniques. Batch lithography/etch patterning process combined with focused ion beam (FIB) modification allows to manufacture thermally active, resistive tips with a nanometer radius of curvature. This design makes the proposed nanoprobes especially attractive for their application in the measurement of the thermal behavior of micro- and nanoelectronic devices. Developed microcantilever is equipped with piezoresistive deflection sensor. The proposed architecture of the cantilever probe enables easy its easy integration with micro- and nanomanipulators and scanning electron microscopes.In order to approach very precisely the microcantilever near to the location to be characterized, it is mounted on a compact nanomanipulator based on a novel mobile technology. This technology allows very stable positioning, with a nanometric resolution over several centimeters which is for example useful for large samples investigations. Moreover, thanks to the vacuum-compatibility, the experiments can be carried out inside scanning electron microscopes.

Piezoresistive cantilever working in a shear force mode for in situ characterization of exposed micro- and nanostructures

This paper presents a method of characterization micro- and nanostructures defined in a photolithography process. To implement this method a measurement system composed of an atomic force microscope (AFM) integrated with a system for maskless lithography was developed. This integration enables exposed patterns to be examined in situ, without any necessity for a developing process. The microscope works in a shear force mode, uses a cantilever with a piezoresistive method of detecting deflection and can be used for measuring surfaces with high aspect ratio by applying an appropriate technology of sharpening in a focused ion beam process. The cantilever fabrication process, its calibration and examination procedures are presented. Finally, the AFM images of structures scanned directly after exposure are shown.

Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy

The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling.

Shear force microscopy using piezoresistive cantilevers in surface metrology

In this article we describe application of piezoresistive cantilevers in surface investigations carried out with the use of shear force microscopy (ShFM). The novel piezoresistive cantilevers integrate a Wheatstone piezoresistive bridge was used to detect the cantilever deflection, thermal deflection detector and planar tip protruding out of the spring beam. Because the planar tip deflection can be detected and controlled electronically the described technology is very flexible and can be applied in many surface investigations. In this article we will present operation theory of the described solution, experimental setup, methods for calibration of the tip deflection detection and actuation The analysis will be illustrated with example results of topography measurements performed using the described technology.

High-resolution and wide-bandwidth light intensity fiber optic displacement sensor for MEMS metrology

We report on the design, properties, and applications of a high-resolution and wide-bandwidth light intensity fiber optic displacement sensor for microelectromechanical system (MEMS) metrology. There are two types of structures that the system is dedicated to: vibrating with both high and low frequencies. In order to ensure high-frequency and high-resolution measurements, frequency down mixing and selective signal processing were applied. The obtained effective measuring bandwidth ranges from single hertz to 1 megahertz. The achieved resolution presented here is 116  pm/Hz1/2 and 138  pm/Hz1/2 for low-frequency and high-frequency operation modes, respectively, whereas the measurement of static displacement is 100 μm.

Optimization method of photolithography process by means of atomic force microscopy

In this article authors present a method for determining optimal photoresist exposure parameters in a photolithography process by an analysis of a topographic profile of exposed images in a photoresist layer. As a measurement tool an Atomic Force Microscopy (AFM) integrated with a system for maskless lithography was used. The measurement system with the piezoresistive cantilever and experimental procedure was described. Initial experiments result of determining the optimal exposure energy and minimizing the stitching error method were presented.

Development of the tunneling junction simulation environment for scanning tunneling microscope evaluation

Proper configuration of scanning tunneling microscope electronics plays an important role in the atomic scale resolution surface imaging. Device evaluation in the tunneling contact between scanning tip and sample may be prone to the surface quality or mechanical disturbances. Thus the use of tunneling junction simulator makes electronics testing more reliable and increases its repeatability. Here, we present the theoretical background enabling the proper selection of electronic components circuitry used as a tunneling junction simulator. We also show how to simulate mechanics related to the piezoelectric scanner, which is applied in real experiments. Practical use of the proposed simulator and its application in metrological characterization of the developed scanning tunneling microscope is also shown.

Magnetoelectric versus thermal actuation characteristics of shear force AFM probes with piezoresistive detection

In this paper the authors compare methods used for piezoresistive microcantilevers actuation for the atomic force microscopy (AFM) imaging in the dynamic shear force mode. The piezoresistive detection is an attractive technique comparing the optical beam detection of deflection. The principal advantage is that no external alignment of optical source and detector are needed. When the microcantilever is deflected, the stress is transferred into a change of resistivity of piezoresistors. The integration of piezoresistive read-out provides a promising solution in realizing a compact non-contact AFM. Resolution of piezoresistive read-out is limited by three main noise sources: Johnson, 1/f and thermomechanical noise. In the dynamic shear force mode measurement the method used for cantilever actuation will also affect the recorded noise in the piezoresistive detection circuit. This is the result of a crosstalk between an aluminium path (current loop used for actuation) and piezoresistors located near the base of the beam. In this paper authors described an elaborated in ITE (Institute of Electron Technology) technology of fabrication cantilevers with piezoresistive detection of deflection and compared efficiency of two methods used for cantilever actuation.