Daniel Lynn Stick

Ion trap in a semiconductor chip

The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling1 and Bose–Einstein condensation of cold gases2 to the precise quantum control of individual atomic ions3. Work on miniaturizing electromagnetic traps to the micrometre scale promises even higher levels of control and reliability4. Compared with ‘chip traps’ for confining neutral atoms5,6,7, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass-spectrometer arrays8, compact atomic clocks9 and, most notably, large-scale quantum information processors10,11. Here we report the operation of a micrometre-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium-arsenide heterostructure.

Scaling and suppression of anomalous heating in ion traps

We measure and characterize anomalous motional heating of an atomic ion confined in the lowest quantum levels of a novel rf ion trap that features moveable electrodes. The scaling of heating with electrode proximity is measured, and when the electrodes are cooled from 300 to 150 K, the heating rate is suppressed by an order of magnitude. This provides direct evidence that anomalous motional heating of trapped ions stems from microscopic noisy potentials on the electrodes that are thermally driven. These observations are relevant to decoherence in quantum information processing schemes based on trapped ions and perhaps other charge-based quantum systems.

T-junction ion trap array for two-dimensional ion shuttling, storage, and manipulation

We demonstrate a two-dimensional 11-zone ion trap array, where individual laser-cooled atomic ions are stored, separated, shuttled, and swapped. The trap geometry consists of two linear rf-ion trap sections that are joined at a 90° angle to form a T-shaped structure. We shuttle a single ion around the corners of the T-junction and swap the positions of two crystallized ions using voltage sequences designed to accommodate the nontrivial electrical potential near the junction. Full two-dimensional control of multiple ions demonstrated in this system may be crucial for the realization of scalable ion trap quantum computation and the implementation of quantum networks.

Planar Ion Trap Geometry for Microfabrication

We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers.

Atomic qubit manipulations with an electro-optic modulator

We report new techniques for driving high-fidelity stimulated Raman transitions in trapped-ion qubits. An electro-optic modulator induces sidebands on an optical source, and interference between the sidebands allows coherent Rabi transitions to be efficiently driven between hyperfine ground states separated by 14.53 GHz in a single trapped 111Cd+ ion.

Efficient photoionization loading of trapped ions with ultrafast pulses

Atomic cadmium ions are loaded into radiofrequency ion traps by photoionization of atoms in a cadmium vapor with ultrafast laser pulses. The photoionization is driven through an intermediate atomic resonance with a frequency-quadrupled mode-locked Ti:sapphire laser that produces pulses of either 100-fs or 1-ps duration at a central wavelength of 229 nm. The large bandwidth of the pulses photoionizes all velocity classes of the Cd vapor, resulting in a high loading efficiency compared to previous ion trap loading techniques. Measured loading rates are compared with a simple theoretical model, and we conclude that this technique can potentially ionize every atom traversing the laser beam within the trapping volume. This may allow the operation of ion traps with lower levels of background pressures and less trap electrode surface contamination. The technique and laser system reported here should be applicable to loading most laser-cooled ion species.

Assembling a ring-shaped crystal in a microfabricated surface ion trap

We report on experiments with a microfabricated surface trap designed for trapping a chain of ions in a ring. Uniform ion separation over most of the ring is achieved with a rotationally symmetric design and by measuring and suppressing undesired electric fields. After minimizing these fields the ions are confined primarily by an rf trapping pseudo-potential and their mutual Coulomb repulsion. The ring-shaped crystal consists of approximately 400 Ca

Characterization of fluorescence collection optics integrated with a micro-fabricated surface electrode ion trap.

^+

Ion Trap Networking: Cold, Fast, and Small

ions with an estimated average separation of 9

Demonstration of a scalable, multiplexed ion trap for quantum information processing

\mu m