Daniel Mauch

All solid-state high power microwave source with high repetition frequency.

An all solid-state, megawatt-class high power microwave system featuring a silicon carbide (SiC) photoconductive semiconductor switch (PCSS) and a ferrimagnetic-based, coaxial nonlinear transmission line (NLTL) is presented. A 1.62 cm(2), 50 kV 4H-SiC PCSS is hard-switched to produce electrical pulses with 7 ns full width-half max (FWHM) pulse widths at 2 ns risetimes in single shot and burst-mode operation. The PCSS resistance drops to sub-ohm when illuminated with approximately 3 mJ of laser energy at 355 nm (tripled Nd:YAG) in a single pulse. Utilizing a fiber optic based optical delivery system, a laser pulse train of four 7 ns (FWHM) signals was generated at 65 MHz repetition frequency. The resulting electrical pulse train from the PCSS closely follows the optical input and is utilized to feed the NLTL generating microwave pulses with a base microwave-frequency of about 2.1 GHz at 65 MHz pulse repetition frequency (prf). Under typical experimental conditions, the NLTL produces sharpened output risetimes of 120 ps and microwave oscillations at 2-4 GHz that are generated due to damped gyromagnetic precession of the ferrimagnetic materials axially pre-biased magnetic moments. The complete system is discussed in detail with its output matched into 50 Ω, and results covering MHz-prf in burst-mode operation as well as frequency agility in single shot operation are discussed.

A compact 45 kV curve tracer with picoampere current measurement capability.

This paper discusses a compact high voltage curve tracer for high voltage semiconductor device characterization. The system sources up to 3 mA at up to 45 kV in dc conditions. It measures from 328 V to 60 kV with 15 V resolution and from 9.4 pA to 4 mA with 100 fA minimum resolution. Control software for the system is written in Microsoft Visual C# and features real-time measurement control and IV plotting, arc-protection and detection, an electrically isolated universal serial bus interface, and easy data exporting capabilities. The system has survived numerous catastrophic high voltage device-under-test arcing failures with no loss of measurement capability or system damage. Overall sweep times are typically under 2 min, and the curve tracer system was used to characterize the blocking performance of high voltage ceramic capacitors, high voltage silicon carbide photoconductive semiconductor switches, and high voltage coaxial cable.

High Power Lateral Silicon Carbide Photoconductive Semiconductor Switches and Investigation of Degradation Mechanisms

Several generations of high power, lateral, linear mode, intrinsically triggered 4H-SiC photoconductive semiconductor switch designs and their performance are presented. These switches were fabricated from high purity semi-insulating 4H-SiC samples measuring 12.7 mm × 12.7 mm × 0.36 mm and were able to block dc electric fields up to 370 kV/cm with leakage currents less than 10 μA without failure. Switching voltages and current s up to 26 kV and 450 A were achieved with these devices and ON-state resistances of 2 Ω were achieved with 1 mJ of 355 nm laser energy (7 ns FWHM). After fewer than 100 high power switching cycles, these devices exhibited cracks near the metal/SiC interface. Experimental and simulation results investigating the root cause of this failure mechanism are also presented. These results strongly suggest that a transient spike in the magnitude of the electric field at the metal/SiC interface during both switch closing and opening is the dominant cause of the observed cracking.

Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications

Inductively coupled plasma reactive ion etching (ICP-RIE) of n-type SiC epitaxial layers grown on (0001¯) 4H-SiC semi-insulating substrates has been investigated using chlorine-based plasma. The etch rate and postetching surface morphology have been studied as functions of the plasma composition, ICP power, RIE power, and process pressure. The authors found that the surface smoothness of the epitaxial layer was increased by introducing BCl3 into Cl2/Ar plasma. An optimized process has been developed yielding etch rates of ∼220 nm/min and very smooth surfaces with root mean square roughness of ∼0.3 nm. The spatial-frequency dependence of the one dimensional power spectral density was interpreted using the surface height function h(x) including a low-frequency range, which exhibits saturation and a high-frequency range, which exhibits scaling properties. Through this etching process, the effects of subcontact doping on 4H-SiC photoconductive semiconductor switch (PCSS) performance were investigated. A PCSS ...

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

Characterization of the optical properties of GaN:Fe for high voltage photoconductive switch applications

The optical properties of bulk semi-insulating GaN:Fe are obtained to assess its future suitability as a high voltage photoconductive semiconductor switch (PCSS). The material properties of GaN:Fe hold significant promise to improve devices for pulsed power and other applications. Growth techniques of bulk GaN:Fe, which have hitherto been largely insufficient for commercial applications, are nearing the point that anticipatory characterization research is warranted. In this paper, the optical constants of bulk GaN:Fe (refractive index, absorption coefficient, and off-state dielectric function) were determined by optical reflection/transmission analysis. The results of this analysis are compared with a similar treatment of bulk 4H-SiC as well as possible elements of PCSS housing: Sylgard 184 elastomer, and EFI 20003/50013 electrical potting epoxy. The data presented provide foundational material characterization to enable assessment of the feasibility of GaN:Fe as a practical high voltage PCSS material. Beyond basic materials research, these properties inform design optimization in PCSS construction and implementation.

Performance and characterization of a 20 kV, contact face illuminated, silicon carbide photoconductive semiconductor switch for pulsed power applications

A 20 kV, lateral geometry, contact face illuminated, silicon carbide (SiC) photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS was fabricated from high purity semi-insulating, bulk 4H-SiC (12.7 mm × 12.7 mm × 0.35 mm), in a lateral geometry, with both the anode and cathode contacts located on the same face of the device. The device was illuminated with light from a tripled Nd:YAG laser (355 nm-7 ns FWHM) entering from the contact face. The device demonstrated sub-ohm on-state resistance for laser pulse energies in the mJ range, and micro-ampere leakage currents at 20 kVdc in the off-state. Voltage hold-off and low leakage currents in the off state were achieved through high energy electron beam irradiation of the bulk material. The switchs geometry and packaging are discussed, along with experimental switching and blocking characteristics.

Nonlinear UV absorption properties of bulk 4H-SiC

The intensity-dependent light absorption in bulk high-purity semi-insulating 4H-SiC at above band gap photon energies has been studied. In particular, 3.49 eV (355 nm) UV absorption of 160 μm-thick samples of varying recombination lifetimes in the intensity range of 1 mJ/cm2–30 mJ/cm2 is addressed. The effective absorption coefficient was found to vary up to 30% within this range. Assuming deep level trapping, interband absorption, and free carrier absorption as dominant processes, a four energy level model reproduces the experimentally observed absorption behavior. While nonlinearities in the optical absorption behavior of SiC have been studied previously as function of wavelength α(λ), temperature α(T) and, to a very limited extent, at below bandgap optical intensities, the presented elucidates the UV intensity-dependent nonlinear absorption behavior, α(I), of SiC at above bandgap photon energies.

Evaluation of GaN:Fe as a high voltage photoconductive semiconductor switch for pulsed power applications

Semi-insulating Gallium Nitride is evaluated as a candidate material for use as a high voltage photoconductive semiconductor switch (PCSS) for pulsed power applications. The GaN:Fe samples used for this investigation were commercially available, bulk, semi-insulating samples measuring 10 mm × 10 mm × 475 μm. Their optical and crystallographic properties were determined utilizing cathodoluminesence, photoluminescence, RHEED, as well as microwave reflection techniques for carrier lifetime studies. Experimental results are presented elucidating the potential of GaN:Fe sustaining high potential differences in both lateral and vertical geometry devices. For instance, electric field hold-off exceeding 100 kV/cm was observed in lateral geometry with mm sized gaps. In addition, a process for the homo-epitaxial growth of GaN:Si was developed in order to facilitate the fabrication of high quality ohmic contacts. Lastly, experimental results evaluating the on-state performance and photo-current efficiency of a GaN:Fe based PCSS are presented.

Characterization of intra-bandgap defect states through leakage current analysis for optimization of 4H-SiC photoconductive switches

A method of characterizing mid-bandgap defect states in high purity semi-insulating 4H-SiC through leakage current analysis for optimization of SiC photoconductive switches is presented. The method utilizes two custom IV curve tracer systems to measure leakage currents through the material under various voltage/current conditions. The first system is used under low current conditions and is capable of measurements from 0 to 45 kV at currents ranging from 0 to 3 mA with pA resolution. A second system measures the transient discharge of a charged capacitor bank through the material. Due to power dissipation concerns, the second system is used for currents higher than 0.1 mA. Voltage/current measurements in this region (>0.1 mA) are of interest due to the information concerning defect states near the conduction band. These shallow defect states are detrimental to switching performance while offering little benefit to voltage hold-off. From the combined data of these two systems, characteristics of the defect states are extracted and presented. We further elucidate the effect of contact annealing temperature on shallow trap levels in electron-beam irradiated material (2*1018 1/cm2).