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Daniel Selle

Philips

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Publication

Featured researches published by Daniel Selle.

Archive | 1988

Method of manufacture semiconductor device of the hetero-junction bipolar transistor type

Daniel Selle; Philippe Boissenot; Patrick Rabinzohn

Archive | 1991

Method of manufacturing by autoalignment an integrated semiconductor device comprising at least the formation of an encapsulated first electrode contact provided with spacers and of a second autoaligned electrode contact on the former

Daniel Selle; Dominique Carisetti

Electronics Letters | 1990

8 GHz full Nyquist HBT comparator

Daniel Selle; D. Carisetti; T. Ducourant; P. Bertsch; P. Boissenot

Archive | 1991

Process for manufacturing an integrated semiconductor device comprising the formation of a first contact electrode, encapsulated and provided with spacers, and a second contact electrode auto-aligned to the first

Daniel Selle; Dominique Carisetti

Archive | 1988

Method of manufacturing a semiconductor device including at least one bipolar heterojunction transistor

Daniel Selle; Philippe Boissenot

Archive | 1988

Method of manufacturing a bipolar heterojunction transistor

Daniel Selle; Daniel Société Civile S.P.I.D. Boissenot; Patrick Rabinzohn

Archive | 1991

PROCEDE DE REALISATION PAR AUTOALIGNEMENT, D'UN DISPOSITIF SEMICONDUCTEUR INTEGRE, COMPRENANT AU MOINS LA FORMATION D'UN PREMIER CONTACT D'ELECTRODE ENCAPSULE ET MUNI D'ESPACEURS ET D'UN SECOND CONTACT D'ELECTRODE AUTOALIGNE SUR CELUI-CI.

Daniel Selle; Dominique Carisetti

Archive | 1991

A method of manufacturing an integrated semiconductor device comprising forming a first contact electrode, which is encapsulated and provided with spacer and a second contact electrode, which is automatically adjusted to the first

Daniel Selle; Dominique Carisetti

Archive | 1991

Verfahren zur Herstellung einer integrierten Halbleitervorrichtung beinhaltend die Ausbildung einer ersten Kontaktelektrode, welche gekapselt und mit Distanzstück versehen ist und einer zweiten Kontaktelektrode, die automatisch zur ersten justiert ist A method of manufacturing an integrated semiconductor device comprising forming a first contact electrode, which is encapsulated and provided with spacer and a second contact electrode, which is automatically adjusted to the first

Daniel Selle; Dominique Carisetti

Archive | 1988

Verfahren zur herstellung eines bipolaren heterouebergangstransistor. A process for producing a bipolar hetero-junction transistor.

Daniel Selle; Daniel Societe Civil Boissenot; Patrick Societe Civi Rabinzohn

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Dominique Carisetti

Philips

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Philippe Boissenot

Philips

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Patrick Rabinzohn

Philips

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D. Carisetti

Philips

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P. Bertsch

Philips

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P. Boissenot

Philips

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T. Ducourant

Philips

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