Daniel Walkup

Observation of Dirac Node Formation and Mass Acquisition in a Topological Crystalline Insulator

Half-Massless Certain materials, such as topological crystalline insulators (TCIs), host robust surface states that have a Dirac (graphene-like) dispersion associated with massless carriers; the breaking of protective symmetry within such materials should cause the carriers to acquire mass. Okada et al. (p. 1496, published online 29 August) used scanning tunneling microscopy to map out the energies of the electronic levels of the TCI Pb1-xSnxSe as a function of the strength of an external magnetic field. The massless Dirac fermions coexisted with massive ones, presumably as a consequence of a distortion of the crystalline structure affecting only one of the two mirror symmetries. Scanning tunneling spectroscopy of Pb1–xSnxSe in a magnetic field reveals two types of Dirac fermions. In topological crystalline insulators (TCIs), topology and crystal symmetry intertwine to create surface states with distinct characteristics. The breaking of crystal symmetry in TCIs is predicted to impart mass to the massless Dirac fermions. Here, we report high-resolution scanning tunneling microscopy studies of a TCI, Pb1-xSnxSe that reveal the coexistence of zero-mass Dirac fermions protected by crystal symmetry with massive Dirac fermions consistent with crystal symmetry breaking. In addition, we show two distinct regimes of the Fermi surface topology separated by a Van-Hove singularity at the Lifshitz transition point. Our work paves the way for engineering the Dirac band gap and realizing interaction-driven topological quantum phenomena in TCIs.

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators

The tunability of topological surface states and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In the newly discovered topological crystalline insulators (TCIs), theory predicts that the Dirac node is protected by a crystalline symmetry and that the surface state electrons can acquire a mass if this symmetry is broken. Recent studies have detected signatures of a spontaneously generated Dirac gap in TCIs; however, the mechanism of mass formation remains elusive. In this work, we present scanning tunnelling microscopy (STM) measurements of the TCI Pb1-xSnxSe for a wide range of alloy compositions spanning the topological and non-topological regimes. The STM topographies reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons-a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Interestingly, the measured Dirac gap decreases on approaching the trivial phase, whereas the magnitude of the distortion remains nearly constant. Our data and calculations reveal that the penetration depth of Dirac surface states controls the magnitude of the Dirac mass. At the limit of the critical composition, the penetration depth is predicted to go to infinity, resulting in zero mass, consistent with our measurements. Finally, we discover the existence of surface states in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions and could be exploited in realizing superconductivity in these materials.

Mapping the unconventional orbital texture in topological crystalline insulators

In crystalline topological insulators, the combination of an insulating bulk with conducting surface states is due to particular crystal symmetry. The associated Dirac cones—linear crossings in the electronic band structure—exhibit non-trivial orbital textures that have now been probed by means of scanning tunnelling spectroscopy.

Imaging the evolution of metallic states in a correlated iridate

The Ruddlesden-Popper series of iridates (Srn+1IrnO3n+1) have been the subject of much recent attention due to the anticipation of emergent phenomena arising from the cooperative action of spin-orbit-driven band splitting and Coulomb interactions. However, an ongoing debate over the role of correlations in the formation of the charge gap and a lack of understanding of the effects of doping on the low-energy electronic structure have hindered experimental progress in realizing many of the predicted states. Using scanning tunnelling spectroscopy we map out the spatially resolved density of states in Sr3Ir2O7 (Ir327). We show that its parent compound, argued to exist only as a weakly correlated band insulator, in fact possesses a substantial ~ 130 meV charge excitation gap driven by an interplay between structure, spin-orbit coupling and correlations. We find that single-atom defects are associated with a strong electronic inhomogeneity, creating an important distinction between the intrinsic and spatially averaged electronic structure. Combined with first-principles calculations, our measurements reveal how defects at specific atomic sites transfer spectral weight from higher energies to the gap energies, providing a possible route to obtaining metallic electronic states from the parent insulating states in the iridates.The Ruddlesden-Popper (RP) series of iridates (Srn+1IrnO3n+1) have been the subject of much recent attention due to the anticipation of emergent physics arising from the cooperative action of spin-orbit (SO) driven band splitting and Coulomb interactions[1-3]. However an ongoing debate over the role of correlations in the formation of the charge gap and a lack of understanding of the effects of doping on the low energy electronic structure have hindered experimental progress in realizing many of the predicted states[4-8] including possible high-Tc superconductivity[7,9]. Using scanning tunneling spectroscopy we map out the spatially resolved density of states in the n=2 RP member, Sr3Ir2O7 (Ir327). We show that the Ir327 parent compound, argued to exist only as a weakly correlated band insulator in fact possesses a substantial ~130meV charge excitation gap driven by an interplay between structure, SO coupling and correlations. A critical component in distinguishing the intrinsic electronic character within the inhomogeneous textured electronic structure is our identification of the signature of missing apical oxygen defects, which play a critical role in many of the layered oxides. Our measurements combined with insights from calculations reveal how apical oxygen vacancies transfer spectral weight from higher energies to the gap energies thereby revealing a path toward obtaining metallic electronic states from the parent-insulating states in the iridates.

Influence of Electron Doping on the Ground State of (Sr1-xLax)2IrO4

The evolution of the electronic properties of electron-doped (Sr1-xLax)2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0:02 and charge transport remains percolative up to the limit of La substitution (x =0:06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent states long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and di erences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.

Visualizing Landau Levels of Dirac Electrons in a One-Dimensional Potential

Using scanning tunneling spectroscopy, we study a 3D topological insulator Bi(2)Te(3) with a periodic structural deformation (buckling). The buckled surface allows us to measure the response of Dirac electrons in a magnetic field to the presence of a well-defined potential variation. We find that while the n=0 Landau level exhibits a 12 meV energy shift across the buckled structure at 7 T, the amplitude of this shift changes with the Landau level index. Modeling these effects reveals that the Landau level behavior encodes information on the spatial extent of their wave functions. Our findings have important implications for transport and magnetoresistance measurements in Dirac materials with engineered potential landscapes.

Ripple-modulated electronic structure of a 3D topological insulator

Three-dimensional topological insulators host linearly dispersing states with unique properties and a strong potential for applications. An important ingredient in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Direct analogy to the Dirac material graphene suggests that a possible avenue for controlling local properties is via a controlled structural deformation such as the formation of ripples. However, the influence of such ripples on topological insulators is yet to be explored. Here we use scanning tunnelling microscopy to determine the effects of one-dimensional buckling on the electronic properties of Bi(2)Te(3.) By tracking spatial variations of the interference patterns generated by the Dirac electrons we show that buckling imposes a periodic potential, which locally modulates the surface-state dispersion. This suggests that forming one- and two-dimensional ripples is a viable method for creating nanoscale potential landscapes that can be used to control the properties of Dirac electrons in topological insulators.

First-order melting of a weak spin-orbit mott insulator into a correlated metal

The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)La(x))(3)Ir(2)O(7) is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x≈0.04. Continued electron doping results in an abrupt, first-order phase boundary where the Néel state is suppressed and a homogenous, correlated, metallic state appears with an enhanced spin susceptibility and local moments. As the metallic state is stabilized, a weak structural distortion develops and suggests a competing instability with the parent spin-orbit Mott state.

Quasiparticle interference and strong electron-mode coupling in the quasi-one-dimensional bands of Sr2RuO4

The normal state of the ruthenate Sr2RuO4 is not that of a conventional metal but one with enhanced correlation effects, which may help to elucidate the origin of the unconventional superconductivity observed in this material.

Nanoscale determination of the mass enhancement factor in the lightly doped bulk insulator lead selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties that could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale level. This opens up a new pathway for investigating the local effects of doping and strain on the mass enhancement factor.