Daniela Stornaiuolo

Origin of Interface Magnetism in BiMnO_{3}/SrTiO_{3} and LaAlO_{3}/SrTiO_{3} Heterostructures

Possible ferromagnetism induced in otherwise nonmagnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetism can be stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated with magnetic Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetism is quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in this phenomenon.

In-plane electronic confinement in superconducting LaAlO3/SrTiO3 nanostructures

We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO3/SrTiO3 interface. Bridges with lateral dimensions down to 500 nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO3/SrTiO3 interface.

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility ( ≈10 000 cm2 V−1 s−1) and the lowest sheet carrier density ( ≈5×1012 cm−2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8×1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.

Thermal hopping and retrapping of a Brownian particle in the tilted periodic potential of a NbN/MgO/NbN Josephson junction

We report on the occurrence of multiple hopping and retrapping of a Brownian particle in a tilted washboard potential. The escape dynamic has been studied experimentally by measuring the switching current distributions as a function of temperature in a moderately damped NbN/MgO/NbN Josephson junction. At low temperatures the second moment of the distribution increases in agreement with calculations based on Kramers thermal activation regime. After a turn-over temperature T*, the shape of the distributions starts changing and width decreases with temperature. We analyze the data through fit of the switching probability and Monte Carlo simulations and we find a good agreement with a model based on a multiple retrapping process.

Large modulation of the Shubnikov?de Haas oscillations by the Rashba interaction at the LaAlO3/SrTiO3 interface

We investigate the two-dimensional Fermi surface of high-mobility LaAlO3/SrTiO3 interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin–orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy dxz/dyz orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect.

Direct Transition from Quantum Escape to a Phase Diffusion Regime in YBaCuO Biepitaxial Josephson Junctions

Dissipation encodes the interaction of a quantum system with the environment and regulates the activation regimes of a Brownian particle. We have engineered grain boundary biepitaxial YBaCuO junctions to drive a direct transition from a quantum activated running state to a phase diffusion regime. The crossover to the quantum regime is tuned by the magnetic field and dissipation is described by a fully consistent set of junction parameters. To unravel phase dynamics in moderately damped systems is of general interest for advances in the comprehension of retrapping phenomena and in view of quantum hybrid technology.

Quantum crossover in moderately damped epitaxial NbN/MgO/NbN junctions with low critical current density

High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3 A/cm

Little-Parks effect in single nanoscale YBa 2 Cu 3 O 6 + x rings

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Submicron YBaCuO biepitaxial Josephson junctions: d-wave effects and phase dynamics

have been achieved for larger barriers. In this limit, junctions exhibit macroscopic quantum phenomena for temperatures lower than 90 mK. Measurements and junction parameters support the notion of a possible use of these devices for multiphoton quantum experiments, taking advantage of the fast non equilibrium electron-phonon relaxation times of NbN.

Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO 3 /SrTiO 3 interface

The properties of single submicron high-temperature superconductor (HTS) rings are investigated. The Little-Parks effect is observed and is accompanied by an anomalous behavior of the magnetic dependence of the resistance, which we ascribe to non-uniform vorticity (superfluid angular momentum) within the ring arms. This effect is linked to the peculiar HTS-relationship between the values of the coherence length and the London penetration depth.