Daniela White

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

The 193 nm photoresist generation will need several technological approaches in order for it to be successfully integrated into manufacturing. These approaches include bilayer, single layer and top surface imaging resists. Bilayer resists offer the advantages of thin film imaging (resolution, depth of focus) and potential advantages in plasma etch resistance due to the possibility of incorporating aromatic components into the undercoat. We have developed a prototype bilayer resist system based on a silicon containing methacrylate imageable layer and a crosslinked styrenic copolymer undercoat which has shown 0.13 micrometers resolution. In this paper we will discuss the effects of O2-RIE and polysilicon etch on resist and substrate profile, selectivity and iso-dense resist.

Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Thermal decomposition of silyl substituted methacrylate terpolymers containing acid sensitive groups was studied using thermogravimetric analysis. The onset of decomposition was found to be a function of the microenvironment, i.e. the molar% composition of the acid sensitive group monomer. The Flynn and Wall method of estimating Ea was used to estimate the Ea for decomposition of the terpolymer and where possible, for the acid sensitive group.