Dave Berry

Practical Aspects of EIK Technology

Significant progress in modeling and manufacturing technologies open wide possibilities for performance improvements of millimeter-wave vacuum electron devices. However, many practical aspects should be considered to realize reliable long-life high-power sources. These are: thermal and RF stability, materials and assembly sensitivity to manufacturing, electrical stresses, cathode poisoning prevention, thermal beam effects, and many others. We address the full spectrum of design and manufacturing aspects while developing state-of-the-art extended interaction klystrons (EIKs). EIKs provide unprecedented RF performance and reliability in a compact user-friendly package. This paper discusses EIK design methodology and manufacturing concepts stating self-imposed restrictions and design modifications enhancing power capability, bandwidth, and extending operating frequencies into the terahertz region.

A compact, high power, sub-millimeter-wave Extended Interaction Klystron

This presentation describes the performance of a recently developed 218 GHz extended interaction klystron (EIK) amplifier producing 7W CW and weighing less than 4.3 kg.

Extended Interaction Klystrons for Submillimeter Applications

This presentation describes the extended interaction klystron technology and presents improvements and design modifications in order to extend operational frequency into the sub-millimeter region

Advantages of the Extended Interaction klystron Technology at Millimeter and Sub-Millimeter Frequencies

This paper reviews the technology and demonstrated capability of mmW and Sub-mmW Extended Interaction Klystrons at CPI Canada. It discusses design and manufacturing concepts stating self-imposed restrictions and design modifications enhancing power capability, bandwidth and extending operating frequency into the THz region.

15.4: Design of terahertz Extended Interaction Klystrons

The development of terahertz power amplifiers presents significant new challenges as it brings into focus design, fabrication, and measurement issues that are not important factors at lower frequencies. In this paper, we describe our design approach to meet these challenges with particular emphasis on a 0.67 THz Extended-Interaction Klystron (EIK). This device is being designed to generate a peak power of ∼0.5W with gain of ∼23 dB over an instantaneous bandwidth of 15 GHz. The circuit will be driven by a 100 mA, 25kV electron beam confined in a 0.005″diameter beam tunnel with ∼1 Tesla magnetic field. This choice of beam size ensures that the same electron gun can be employed for all program development phases culminating in a 1.03 THz amplifier. A highly efficient depressed collector has also been designed to meet the efficiency requirement.

High power CW 264 GHz tunable Extended Interaction Oscillator

A novel model of the compact high power 264 GHz CW Extended Interaction Oscillator has been developed by CPI Canada. By combination of mechanical tuning and electronic switching between two operating modes, this EIO provides over 1 W of power in the range of 258 to 270 GHz. Liquid cooling is used to stabilize RF circuit temperature and prevent frequency detuning. Further development is ongoing to support THz operation with enhanced output power, which is currently limited by vacuum window capability.

Extended Interaction Klystrons for terahertz power amplifiers

Extended Interaction Klystrons have been demonstrated at frequencies up to 218 GHz CW and 229 GHz pulsed. Modern design, fabrication, and measurement technologies show promise of extending their operation into the THz regime. This paper describes the challenges and some novel approaches to the development of EIKs operating terahertz frequencies, while simultaneously meeting demanding requirements for output power, gain, bandwidth, and efficiency.

12.3: Extended Interaction Klystrons for terahertz power amplifiers

Extended Interaction Klystrons have been demonstrated at frequencies up to 218 GHz CW and 229 GHz pulsed. Modern design, fabrication, and measurement technologies show promise of extending their operation into the THz regime. This paper describes the challenges and some novel approaches to the development of EIKs operating at 670, 850 and 1030 GHz, while simultaneously meeting demanding requirements for output power, gain, bandwidth, and efficiency.

A 2 GHz Bandwidth, High Power W-Band Extended Interaction Klystron

This paper details the development and test of a 2.2% bandwidth, 95 GHz Extended Interaction Klystron (EIK). This bandwidth was achieved with a peak RF power of ~1 kW (100 W average) while maintaining a compact size and weight (less than 6 kg).

Compact High Power Ka-band Extended Interaction Klystron for Terrestrial and Space Applications

CPI Canada is developing a new-line of pulsed Ka-band amplifiers, featuring ultra-compact size, higher power, improved efficiency, conduction cooling and space-grade reliability. The major goal of the development is to address the needs of several current and future space missions. Space-borne Ka-band radars are proposed for precision measurements of global precipitation, water surface elevation and for high resolution mapping of planetary images. This abstract presents highlights of many technological innovations used for extended interaction klystron (EIK) design, and summary of the space development programs, which are underway at CPI Canada