David Goldhaber-Gordon

Kondo effect in a single-electron transistor

How localized electrons interact with delocalized electrons is a central question to many problems in sold-state physics. The simplest manifestation of this situation is the Kondo effect, which occurs when an impurity atom with an unpaired electron is placed in a metal. At low temperatures a spin singlet state is formed between the unpaired localized electron and delocalized electrons at the Fermi energy. Theories predict that a Kondo singlet should form in a single-electron transistor (SET), which contains a confined ‘droplet’ of electrons coupled by quantum-mechanical tunnelling to the delocalized electrons in the transistors leads. If this is so, a SET could provide a means of investigating aspects of the Kondo effect under controlled circumstances that are not accessible in conventional systems: the number of electrons can be changed from odd to even, the difference in energy between the localized state and the Fermi level can be tuned, the coupling to the leads can be adjusted, voltage differences can be applied to reveal non-equilibrium Kondo phenomena, and a single localized state can be studied rather than a statistical distribution. But for SETs fabricated previously, the binding energy of the spin singlet has been too small to observe Kondo phenomena. Ralph and Buhrman have observed the Kondo singlet at a single accidental impurity in a metal point contact, but with only two electrodes and without control over the structure they were not able to observe all of the features predicted. Here we report measurements on SETs smaller than those made previously, which exhibit all of the predicted aspects of the Kondo effect in such a system.

Transport measurements across a tunable potential barrier in graphene.

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. When the barrier is sufficiently strong to form a bipolar junction (n-p-n or p-n-p) within the graphene sheet, the resistance across the barrier sharply increases. We compare these results to predictions for both diffusive and ballistic transport, as the barrier rises on a length scale comparable to the mean free path. Finally, we show how a magnetic field modifies transport across the barrier.

Evidence for Klein Tunneling in Graphene p-n Junctions

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.

Overview of nanoelectronic devices

This paper provides an overview of research developments toward nanometer-scale electronic switching devices for use in building ultra-densely integrated electronic computers. Specifically, two classes of alternatives to the field-effect transistor are considered: (1) quantum-effect and single-electron solid-state devices and (2) molecular electronic devices. A taxonomy of devices in each class is provided, operational principles are described and compared for the various types of devices, and the literature about each is surveyed. This information is presented in nonmathematical terms intended for a general, technically interested readership.

FROM THE KONDO REGIME TO THE MIXED-VALENCE REGIME IN A SINGLE-ELECTRON TRANSISTOR

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electrons energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.

Fano resonances in electronic transport through a single-electron transistor

We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of quantum dots, but the origin of the non-resonant path is unclear. A unique feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.

Low-temperature fate of the 0.7 structure in a point contact: A kondo-like correlated state in an open system

Besides the usual conductance plateaus at multiples of 2e(2)/h, quantum point contacts typically show an extra plateau at approximately 0.7(2e(2)/h), believed to arise from electron-electron interactions that prohibit the two spin channels from being simultaneously occupied. We present evidence that the disappearance of the 0.7 structure at very low temperature signals the formation of a Kondo-like correlated spin state. Evidence includes a zero-bias conductance peak that splits in a parallel field, scaling of conductance to a modified Kondo form, and consistency between peak width and the Kondo temperature.

Gate-controlled spin-orbit quantum interference effects in lateral transport.

In situ control of spin-orbit coupling in coherent transport using a clean GaAs/AlGaAs two-dimensional electron gas is realized, leading to a gate-tunable crossover from weak localization to antilocalization. The necessary theory of 2D magnetotransport in the presence of spin-orbit coupling beyond the diffusive approximation is developed and used to analyze experimental data. With this theory the Rashba contribution and linear and cubic Dresselhaus contributions to spin-orbit coupling are separately estimated, allowing the angular dependence of spin-orbit precession to be extracted at various gate voltages.

Unconventional Josephson Effect in Hybrid Superconductor-Topological Insulator Devices

We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.

Quantum dot behavior in graphene nanoconstrictions.

Graphene nanoribbons display an imperfectly understood transport gap. We measure transport through nanoribbon devices of several lengths. In long (>/=250 nm) nanoribbons we observe transport through multiple quantum dots in series, while shorter (</=60 nm) constrictions display behavior characteristic of single and double quantum dots. New measurements indicate that dot size may scale with constriction width. We propose a model where transport occurs through quantum dots that are nucleated by background disorder potential in the presence of a confinement gap.