David Hamby

Study of Luminescence from GaN : Tb3 + Powders and Thin Films Deposited by MOVPE and PLD Methods

accompanied by near-band-edge emission and defect emissions from the GaN host was observed for the MOVPE films made using tris2,2,6,6-tetramethyl-3,5-heptanedionatoterbium but not films made with trisisopropylcyclopentadienylterbium. Despite visible luminescence from Tb 3+ in GaN powders and thin films, no energy transfer from the host to activator ions was observed. This suggests that Tb 3+ is unlikely to fluoresce if used in a GaN-based optoelectronic device.