David J. Michalak

Scalable quantum circuit and control for a superconducting surface code

We present a scalable scheme for executing the error-correction cycle of a monolithic surface-code fabric composed of fast-flux-tunable transmon qubits with nearest-neighbor coupling. An eight-qubit unit cell forms the basis for repeating both the quantum hardware and coherent control, enabling spatial multiplexing. This control uses three fixed frequencies for all single-qubit gates and a unique frequency-detuning pattern for each qubit in the cell. By pipelining the interaction and readout steps of ancilla-based X- and Z-type stabilizer measurements, we can engineer detuning patterns that avoid all second-order transmon-transmon interactions except those exploited in controlled-phase gates, regardless of fabric size. Our scheme is applicable to defect-based and planar logical qubits, including lattice surgery.

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

Process technology scaling in an increasingly interconnect dominated world

The RC delay and power restrictions imposed by the interconnect system can contribute to poor circuit performance in an increasingly severe manner as dimensions shrink. Resistances are increasing faster than the scale factor of the technology and capacitance improvements are constrained by mechanical requirements of the assembled stack. Collectively, these cause a bottleneck in both local and global information transfer on a chip. Novel deposition methods and novel conductor materials are being explored as means to increase conductive cross sectional area. Molecular ordering is an opportunity to simultaneously deliver capacitance and mechanical strength. Despite these improvement paths, a more holistic approach to interconnect design is needed, where the application and micro architecture are more tolerant of RC scaling constraints.

A photo Lewis acid generator (PhLAG): controlled photorelease of B(C6F5)3.

A molecule that releases the strong organometallic Lewis acid B(C(6)F(5))(3) upon irradiation with 254 nm light has been developed. This photo Lewis acid generator (PhLAG) now enables the photocontrolled initiation of several reactions catalyzed by this important Lewis acid. Herein is described the synthesis of the triphenylsulfonium salt of a carbamato borate based on a carbazole function, its establishment as a PhLAG, and the application of the photorelease of B(C(6)F(5))(3) to the fabrication of thin films of a polysiloxane material.

Morphology and chemical termination of HF-etched Si3N4 surfaces

Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-Hx, Si-H, or fluorine termination. An investigation combining infrared and x-ray photoelectron spectroscopies with atomic force and scanning electron microscopy imaging reveals that under some processing conditions, salt microcrystals are formed and stabilized on the surface, resulting from products of Si3N4 etching. Rinsing in deionized water immediately after HF etching for at least 30 s avoids such deposition and yields a smooth surface without evidence of Si-H termination. Instead, fluorine and oxygen are found to terminate a sizeable fraction of the surface in the form of Si-F and possibly Si-OH bonds. The relatively unique fluorine termination is remarkably stable in both air and water and could lead to further chemical functionalization pathways.

Cobalt and iron segregation and nitride formation from nitrogen plasma treatment of CoFeB surfaces

Cobalt-iron-boron (CoFeB) thin films are the industry standard for ferromagnetic layers in magnetic tunnel junction devices and are closely related to the relevant surfaces of CoFe-based catalysts. Identifying and understanding the composition of their surfaces under relevant processing conditions is therefore critical. Here we report fundamental studies on the interaction of nitrogen plasma with CoFeB surfaces using infrared spectroscopy, x-ray photoemission spectroscopy, and low energy ion scattering. We find that, upon exposure to nitrogen plasma, clean CoFeB surfaces spontaneously reorganize to form an overlayer comprised of Fe2N3 and BN, with the Co atoms moved well below the surface through a chemically driven process. Subsequent annealing to 400 °C removes nitrogen, resulting in a Fe-rich termination of the surface region.

General method for extracting the quantum efficiency of dispersive qubit readout in circuit QED

We present and demonstrate a general three-step method for extracting the quantum efficiency of dispersive qubit readout in circuit QED. We use active depletion of post-measurement photons and optimal integration weight functions on two quadratures to maximize the signal-to-noise ratio of the non-steady-state homodyne measurement. We derive analytically and demonstrate experimentally that the method robustly extracts the quantum efficiency for arbitrary readout conditions in the linear regime. We use the proven method to optimally bias a Josephson traveling-wave parametric amplifier and to quantify different noise contributions in the readout amplification chain.

Initial nitride formation during plasma-nitridation of cobalt surfaces

Nitridation of metal surfaces is of central importance in microelectronics and spintronics due to the excellent mechanical, thermal, and electrical properties of refractory nitrides. Here, we examine the chemical and structural modification of cobalt surfaces upon nitrogen plasma treatment, using in situ spectroscopic methods, as a method for synthesis of cobalt nitride thin films. We find that nitrogen is incorporated below the surface and forms an ultrathin film of CoN at temperatures as low as 50 °C. In addition, we observe the incorporation of oxygen and NO+ within the surface region. The nitrided cobalt surfaces are fully passivated by N, O, and NO+. These results provide a route for incorporation of cobalt nitride into a wide range applications.

Ordered porosity for interconnect applications

To lower interconnect signal delay, the industry continues to work on the integration of low-k interlayer dielectrics (ILD). Porosity is often added to further reduce dielectric constant and significantly impact capacitance. These porous dielectric films are most commonly deposited via Chemical Vapor Deposition (CVD), delivering a random order to the pore structure. Disordered films suffer from a reduction in mechanical properties, which ultimately limits the maximum porosity obtained due to film collapse. Control of porosity, pore size distribution and pore geometry is needed to extend the porosity beyond conventional percolation thresholds. Here we present the case study of a periodic mesoporous organosilica (PMO) film. We optimize solution processing to obtain an ordered film and characterize the film porosity, pore size distribution, geometry and mechanical properties. The PMO film is tested in both a dual damascene and replacement back end integration flow.