David K. Kim

Bandlike Transport in Strongly Coupled and Doped Quantum Dot Solids: A Route to High-Performance Thin-Film Electronics

We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm(2)/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands. Temperature-dependent measurements show bandlike transport to 220 K on a SiO(2) gate insulator that is extended to 140 K by reducing the interface trap density using an Al(2)O(3)/SiO(2) gate insulator. The use of compact ligands and doping provides a pathway to high performance, solution-deposited QD electronics and optoelectronics.

Thiocyanate-Capped Nanocrystal Colloids: Vibrational Reporter of Surface Chemistry and Solution-Based Route to Enhanced Coupling in Nanocrystal Solids

Ammonium thiocyanate (NH(4)SCN) is introduced to exchange the long, insulating ligands used in colloidal nanocrystal (NC) synthesis. The short, air-stable, environmentally benign thiocyanate ligand electrostatically stabilizes a variety of semiconductor and metallic NCs in polar solvents, allowing solution-based deposition of NCs into thin-film NC solids. NH(4)SCN is also effective in replacing ligands on NCs after their assembly into the solid state. The spectroscopic properties of this ligand provide unprecedented insight into the chemical and electronic nature of the surface of the NCs. Spectra indicate that the thiocyanate binds to metal sites on the NC surface and is sensitive to atom type and NC surface charge. The short, thiocyanate ligand gives rise to significantly enhanced electronic coupling between NCs as evidenced by large bathochromic shifts in the absorption spectra of CdSe and CdTe NC thin films and by conductivities as high as (2 ± 0.7) × 10(3) Ω(-1) cm(-1) for Au NC thin films deposited from solution. NH(4)SCN treatment of PbTe NC films increases the conductivity by 10(13), allowing the first Hall measurements of nonsintered NC solids, with Hall effect mobilities of 2.8 ± 0.7 cm(2)/(V·s). Thiocyanate-capped CdSe NC thin films form photodetectors exhibiting sensitive photoconductivity of 10(-5) Ω(-1) cm(-1) under 30 mW/cm(2) of 488 nm illumination with I(photo)/I(dark) > 10(3) and form n-channel thin-film transistors with electron mobilities of 1.5 ± 0.7 cm(2)/(V·s), a current modulation of >10(6), and a subthreshold swing of 0.73 V/decade.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Wedge Waveguides and Resonators for Quantum Plasmonics

Plasmonic structures can provide deep-subwavelength electromagnetic fields that are useful for enhancing light–matter interactions. However, because these localized modes are also dissipative, structures that offer the best compromise between field confinement and loss have been sought. Metallic wedge waveguides were initially identified as an ideal candidate but have been largely abandoned because to date their experimental performance has been limited. We combine state-of-the-art metallic wedges with integrated reflectors and precisely placed colloidal quantum dots (down to the single-emitter level) and demonstrate quantum-plasmonic waveguides and resonators with performance approaching theoretical limits. By exploiting a nearly 10-fold improvement in wedge-plasmon propagation (19 μm at a vacuum wavelength, λvac, of 630 nm), efficient reflectors (93%), and effective coupling (estimated to be >70%) to highly emissive (∼90%) quantum dots, we obtain Ag plasmonic resonators at visible wavelengths with quality factors approaching 200 (3.3 nm line widths). As our structures offer modal volumes down to ∼0.004λvac3 in an exposed single-mode waveguide–resonator geometry, they provide advantages over both traditional photonic microcavities and localized-plasmonic resonators for enhancing light–matter interactions. Our results confirm the promise of wedges for creating plasmonic devices and for studying coherent quantum-plasmonic effects such as long-distance plasmon-mediated entanglement and strong plasmon–matter coupling.

Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors.

We report low-hysteresis, ambipolar bottom gold contact, colloidal PbSe nanowire (NW) field-effect transistors (FETs) by chemically modifying the silicon dioxide (SiO(2)) gate dielectric surface to overcome carrier trapping at the NW-gate dielectric interface. While water bound to silanol groups at the SiO(2) surface are believed to give rise to hysteresis in FETs of a wide range of nanoscale materials, we show that dehydration and silanization are insufficient in reducing PbSe NW FET hysteresis. Encapsulating PbSe NW FETs in cured poly(methyl) methacrylate (PMMA), dehydrates and uniquely passivates the SiO(2) surface, to form low-hysteresis FETs. Annealing predominantly p-type ambipolar PbSe NW FETs switches the FET behavior to predominantly n-type ambipolar, both with and without PMMA passivation. Heating the PbSe NW devices desorbs surface bound oxygen, even present in the atmosphere of an inert glovebox. Upon cooling, overtime oxygen readsorption switches the FET polarity to predominantly p-type ambipolar behavior, but PMMA encapsulation maintains low hysteresis. Unfortunately PMMA is sensitive to most solvents and heat treatments and therefore its application for nanostructured material deposition and doping is limited. Seeking a robust, general platform for low-hysteresis FETs we explored a variety of hydroxyl-free substrate surfaces, including silicon nitride, polyimide, and parylene, which show reduced electron trapping, but still large hysteresis. We identified a robust dielectric stack by assembling octadecylphosphonic acid (ODPA) on aluminum oxide (Al(2)O(3)) to form low-hysteresis FETs. We further integrated the ODPA/Al(2)O(3) gate dielectric stack on flexible substrates to demonstrate low-hysteresis, low-voltage FETs, and the promise of these nanostructured materials in flexible, electronic circuitry.

Broadband Up-Conversion at Subsolar Irradiance: Triplet−Triplet Annihilation Boosted by Fluorescent Semiconductor Nanocrystals

Conventional solar cells exhibit limited efficiencies in part due to their inability to absorb the entire solar spectrum. Sub-band-gap photons are typically lost but could be captured if a material that performs up-conversion, which shifts photon energies higher, is coupled to the device. Recently, molecular chromophores that undergo triplet-triplet annihilation (TTA) have shown promise for efficient up-conversion at low irradiance, suitable for some types of solar cells. However, the molecular systems that have shown the highest up-conversion efficiency to date are ill suited to broadband light harvesting, reducing their applicability. Here we overcome this limitation by combining an organic TTA system with highly fluorescent CdSe semiconductor nanocrystals. Because of their broadband absorption and spectrally narrow, size-tunable fluorescence, the nanocrystals absorb the radiation lost by the TTA chromophores, returning this energy to the up-converter. The resulting nanocrystal-boosted system shows a doubled light-harvesting ability, which allows a green-to-blue conversion efficiency of ∼12.5% under 0.5 suns of incoherent excitation. This record efficiency at subsolar irradiance demonstrates that boosting the TTA by light-emitting nanocrystals can potentially provide a general route for up-conversion for different photovoltaic and photocatalytic applications.

Near-Field Light Design with Colloidal Quantum Dots for Photonics and Plasmonics

Colloidal quantum-dots are bright, tunable emitters that are ideal for studying near-field quantum-optical interactions. However, their colloidal nature has hindered their facile and precise placement at desired near-field positions, particularly on the structured substrates prevalent in plasmonics. Here, we use high-resolution electro-hydrodynamic printing (<100 nm feature size) to deposit countable numbers of quantum dots on both flat and structured substrates with a few nanometer precision. We also demonstrate that the autofocusing capability of the printing method enables placement of quantum dots preferentially at plasmonic hot spots. We exploit this control and design diffraction-limited photonic and plasmonic sources with arbitrary wavelength, shape, and intensity. We show that simple far-field illumination can excite these near-field sources and generate fundamental plasmonic wave-patterns (plane and spherical waves). The ability to tailor subdiffraction sources of plasmons with quantum dots provides a complementary technique to traditional scattering approaches, offering new capabilities for nanophotonics.

In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air.

Colloidal semiconductor nanocrystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air.

Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices

Using colloidal CdSe nanowire (NW) field-effect transistors (FETs), we demonstrated the dependence of carrier transport on surface stoichiometry by chemically manipulating the atomic composition of the NW surface. A mild, room-temperature, wet-chemical process was devised to introduce cadmium, selenium, or sulfur adatoms at the surface of the NWs in completed devices. Changes in surface composition were tested for by energy dispersive spectroscopy and inductively coupled plasma-atomic emission spectroscopy and through the use of the vibrational reporter thiocyanate. We found that treatment with cadmium acetate enhances electron currents, while treatment with sodium selenide or sodium sulfide suppressed them. The efficacy of doping CdSe NWs through subsequent thermal diffusion of indium was highly dependent on the surface composition. While selenium-enriched CdSe NW FETs were characterized by little to no electron currents, when combined with indium, they yielded semimetallic devices. Sulfur-enriched, indium-doped devices also displayed dramatically enhanced electron currents, but to a lesser extent than selenium and formed FETs with desirable ION/IOFF >10(6). The atomic specificity of the electronic behavior with different surface chalcogens suggested indium was bound to chalcogens at the NW surface, indicating commonalities with and implications for indium-containing CdSe nanocrystal films. Low temperature measurements of indium-doped CdSe NW FETs showed no evidence of impurity scattering, further supporting the existence of an indium-chalcogen interaction at the surface rather than in the core of the NW.

Ambipolar and unipolar PbSe nanowire field-effect transistors.

Wet-chemical methods, under rigorous air-free conditions, were used to synthesize single-crystalline 10 nm diameter PbSe nanowires (NWs), and electric-field, directed assembly was employed to align NW arrays to form the semiconducting channels of field-effect transistors (FETs). Electrical measurements revealed as-aligned NWs in bottom, gold, contact FETs are predominantly p-type ambipolar, consistent with the presentation of small barriers to electron and hole injection for this low band gap semiconductor. Exposing the NW FET to UV-ozone p-doped the NWs, illustrating the sensitivity of PbSe to oxygen, but controlled oxidation allowed the fabrication of unipolar p-type FETs. Selectively exposing the contact region of as-aligned NW FETs to low to moderate concentrations of hydrazine, commonly used to n-dope nanocrystal and NW devices, switched the predominantly p- to n-type ambipolar behavior as if the entire NW channel was exposed. At these hydrazine concentrations, charge transfer doping the metal-semiconductor interface dominates the FET characteristics. Only upon exposing the NW FETs to high hydrazine concentrations did charge transfer doping of the NW channel overcome the large intrinsic, thermally generated carrier concentration of this low band gap material, modulating the NW carrier concentration and forming unipolar n-type FETs. Pulling low vacuum removed surface hydrazine returning the predominantly p-type ambipolar FET behavior. Doping and dedoping with hydrazine were repeatedly reversible. By applying surface modification to n- and p-dope PbSe NW FETs, we fabricated the first PbSe NW inverters, demonstrating the promise of these nanostructured materials in integrated circuits.